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Zhang Jin-Feng, Xu Jia-Min, Ren Ze-Yang, He Qi, Xu Sheng-Rui, Zhang Chun-Fu, Zhang Jin-Cheng, Hao Yue.Characteristics of hydrogen-terminated single crystalline diamond field effect transistors with different surface orientations. Acta Physica Sinica, 2020, 69(2): 028101.doi:10.7498/aps.69.20191013 |
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Chen Quan-Sheng, Liu Yao-Ping, Chen Wei, Zhao Yan, Wu Jun-Tao, Wang Yan, Du Xiao-Long.Different silicon crystal face index of inverted pyramid structure. Acta Physica Sinica, 2018, 67(22): 226801.doi:10.7498/aps.67.20181275 |
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Qian Li-Rong, Yang Bao-He.Calculation and analysis of surface acoustic wave properties of ZnO film on diamond under different excitation conditions. Acta Physica Sinica, 2013, 62(11): 117701.doi:10.7498/aps.62.117701 |
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Han Jin-Liang, Sun Li-Zhong, Chen Xiao-Shuang, Lu Wei, Zhong Jian-Xin.First-principles study of gold p-type doping in Hg1－xCdxTe. Acta Physica Sinica, 2010, 59(2): 1202-1211.doi:10.7498/aps.59.1202 |
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Yuan Jin-She, Chen Guang-De.Instantaneous relaxation of photoconductivity in GaN film grown on vicinal sapphire substrate by MBE. Acta Physica Sinica, 2007, 56(7): 4218-4223.doi:10.7498/aps.56.4218 |
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Mao Hui-Bing, Jing Wei-Ping, Yu Jian-Guo, Wang Ji-Qing, Wang Li, Dai Ning.Kinetic Monte Carlo simulation of the epitaxial growth mechanism on the vicinal surface. Acta Physica Sinica, 2006, 55(10): 5435-5440.doi:10.7498/aps.55.5435 |
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Wang Qing-Xue, Yang Jian-Rong, Wei Yan-Feng.Theoretical research on critical thickness of HgCdTe epitaxial layers. Acta Physica Sinica, 2005, 54(12): 5814-5819.doi:10.7498/aps.54.5814 |
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Wang Qing-Xue, Yang Jian-Rong, Sun Tao, Wei Yan-Feng, Fang Wei-Zheng, He Li.Relationship between lattice parameters and compositions of molecular beam epitaxial Hg1－xCdxTe films. Acta Physica Sinica, 2005, 54(8): 3726-3733.doi:10.7498/aps.54.3726 |
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HUANG SHI-HUA, MO YU-DONG.RESONANT RAMAN SCATTERING OF Hg1-xCdxTe . Acta Physica Sinica, 2001, 50(5): 964-967.doi:10.7498/aps.50.964 |
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JIANG CHUN-PING, GUI YONG-SHENG, ZHENG GOU-ZHEN, MA ZHI-XUN, WANG SHAN-LI, HE LI, CHU JUN-HAO.INVESTIGATION OF THE LIGHT HOLE IN p-TYPE Hg1-xCdxTe. Acta Physica Sinica, 2000, 49(5): 959-964.doi:10.7498/aps.49.959 |
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LI LI-JUN, WANG ZUO-XIN, WU JIN-LEI.POSITRON ANNIHILATION TIME STUDY OF DEFECTS IN Hg1-xCdxTe SINGLE CRYSTALS. Acta Physica Sinica, 1998, 47(5): 844-850.doi:10.7498/aps.47.844 |
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GUI YONG-SHENG, ZHENG GUO-ZHEN, CHU JUN-HAO, GUO SHAO-LING, TANG DING-YUAN.MAGNETO TRANSPORT CHARACTERIZATION OF MBE GROWN Hg1-xCdxTe. Acta Physica Sinica, 1997, 46(8): 1631-1635.doi:10.7498/aps.46.1631 |
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CHANG YONG, CHU JUN-HAO, TANG WEN-GUO, SHEN WEN-ZHONG, TANG DING-YUAN.PHOTOLUMINESCENCE OF Sb-DOPED Hg1-xCdxTe. Acta Physica Sinica, 1997, 46(5): 959-963.doi:10.7498/aps.46.959 |
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LI BIAO, CHU JUN-HAO, CHANG YONG, GUI YONG-SHENG, TANG DING-YUAN.INTRINSIC ABSORPTION OF Hg1-xCdx TE. Acta Physica Sinica, 1996, 45(5): 747-753.doi:10.7498/aps.45.747 |
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LI BIAO, CHU JUN-HAO, SHI XIAO-HONG, CHEN XIN-QIANG, CAO JU-YING, TANG DING-YUAN.FREE CARRIER ABSORPTION SPECTRA FOR Hg1-xCdxTe EPILAYERS. Acta Physica Sinica, 1996, 45(9): 1430-1437.doi:10.7498/aps.45.1430 |
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WEI YA-YI, ZHENG GUO-ZHEN, GUO SHAO-LING, TANG DING-YUAN.MAGNETIC-FIELD-INDUCED METAL-INSULATOR TRANSITION AND THERMALLY ACTIVATED ELECTRONIC TRANSPORT IN LOW COMPENSATED n-Hg1-xCdxTe. Acta Physica Sinica, 1994, 43(12): 2031-2037.doi:10.7498/aps.43.2031 |
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YUAN HAO-XIN, LI QI-GUANG, JIANG SHAN, LU WEI, TONG FEI-MING, TANG DING-YUAN.HYDROSTATIC PRESSURE STUDIES OF DEEP LEVELS AND RELATED CURRENT MECHANISMS IN Hg1-xCdxTe n+-P PHOTODIODES. Acta Physica Sinica, 1990, 39(3): 464-471.doi:10.7498/aps.39.464 |
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JIANG SHAN, ZHU HAO-RONG, SHEN XUE-CHU, J. SCHILZ.THE PRESSURE DEPENDENCE OF ENERGY GAP FOR MIXED CRYSTAL Hg0.3Cd0.7Te. Acta Physica Sinica, 1989, 38(11): 1858-1863.doi:10.7498/aps.38.1858 |
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ZHENG GUO-ZHEN, GUO SHAO-LING, TANG DING-YUAN.SHUBNIKOV-DE HAAS OSCILLATION IN n-Hg1-xCdxTe. Acta Physica Sinica, 1987, 36(1): 114-119.doi:10.7498/aps.36.114 |
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Fu Rou-li.LOW FREQUENCY ABSORPTION BAND IN Hg1-xCdxTe. Acta Physica Sinica, 1986, 35(10): 1299-1305.doi:10.7498/aps.35.1299 |
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