| [1] |
Geng Xin, Zhang Jie-Yin, Lu Wen-Long, Ming Ming, Liu Fang-Ze, Fu Bin-Xiao, Chu Yi-Xin, Yan Mou-Hui, Wang Bao-Chuan, Zhang Xin-Ding, Guo Guo-Ping, Zhang Jian-Jun.Epitaxy and characterization of undoped Si/SiGe heterojunctions. Acta Physica Sinica, 2024, 73(11): 117302.doi:10.7498/aps.73.20240310 |
| [2] |
Yang Wen-Xian, Ji Lian, Dai Pan, Tan Ming, Wu Yuan-Yuan, Lu Jian-Ya, Li Bao-Ji, Gu Jun, Lu Shu-Long, Ma Zhong-Quan.Study on photoluminescence properties of 1.05 eV InGaAsP layers grown by molecular beam epitaxy. Acta Physica Sinica, 2015, 64(17): 177802.doi:10.7498/aps.64.177802 |
| [3] |
Hu Yi-Bin, Hao Zhi-Biao, Hu Jian-Nan, Niu Lang, Wang Lai, Luo Yi.Studies on the composition of InGaN/AlN quantum dots grown by molecular beam epitaxy. Acta Physica Sinica, 2012, 61(23): 237804.doi:10.7498/aps.61.237804 |
| [4] |
Zhang Bing-Po, Cai Chun-Feng, Cai Xi-Kun, Wu Hui-Zhen, Wang Miao.Study of growth of [111]-oriented CdTe thin films by MBE. Acta Physica Sinica, 2012, 61(4): 046802.doi:10.7498/aps.61.046802 |
| [5] |
Su Shao-Jian, Wang Wei, Zhang Guang-Ze, Hu Wei-Xuan, Bai An-Qi, Xue Chun-Lai, Zuo Yu-Hua, Cheng Bu-Wen, Wang Qi-Ming.Epitaxial growth of Ge0.975Sn0.025alloy films on Si(001) substrates by molecular beam epitaxy. Acta Physica Sinica, 2011, 60(2): 028101.doi:10.7498/aps.60.028101 |
| [6] |
Zhao Ming-Hai, Sun Jing-Jing, Wang Dan, Zou Zhi-Qiang, Liang Qi.STM studies of the epitaxial growth of C60 molecules on Si(111)-7×7 surface. Acta Physica Sinica, 2010, 59(1): 636-642.doi:10.7498/aps.59.636 |
| [7] |
He Meng, Liu Guo-Zhen, Qiu Jie, Xing Jie, Lü Hui-Bin.Epitaxial growth of high quality TiN thin film on Si by laser molecular beam epitaxy. Acta Physica Sinica, 2008, 57(2): 1236-1240.doi:10.7498/aps.57.1236 |
| [8] |
YANG YU, XIA GUAN-QUN, ZHAO GUO-QING, WANG XUN.Si+ ION IMPLANTATION INFLUENCE ON PHOTOLUMINESCENCE IN Si1-xGex/Si QUANTUM WELLS GROWN BY MOLECULAR BEAM EPITAXY. Acta Physica Sinica, 1998, 47(6): 978-984.doi:10.7498/aps.47.978 |
| [9] |
GUI YONG-SHENG, ZHENG GUO-ZHEN, CHU JUN-HAO, GUO SHAO-LING, TANG DING-YUAN.MAGNETO TRANSPORT CHARACTERIZATION OF MBE GROWN Hg1-xCdxTe. Acta Physica Sinica, 1997, 46(8): 1631-1635.doi:10.7498/aps.46.1631 |
| [10] |
GUI QIAN, HUANG QI, CHEN HONG, ZHOU JUN-MING.Si AND GexSi1-x GROWTH MODE STUDY BY RHEED ON H-TERMINATED VICINAL Si SUBSTRATE. Acta Physica Sinica, 1996, 45(4): 647-654.doi:10.7498/aps.45.647 |
| [11] |
LU FANG, GONG DA-WEI, SUN HENG-HUI.A STUDY OF THE INTERFACIAL DEFECTS IN MOLECULAR BEAM EPITAXIAL SILICON. Acta Physica Sinica, 1994, 43(7): 1129-1136.doi:10.7498/aps.43.1129 |
| [12] |
ZHOU GUO-LIANG, SHENG CHI, FAN YONG-LIANG, JIANG WEI-DONG, YU MING-RBN.MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERI-ZATION OF GexSi1-x/Si STRAINED-LAYER SUPERLATTICES. Acta Physica Sinica, 1993, 42(7): 1121-1128.doi:10.7498/aps.42.1121-2 |
| [13] |
HU FU-YI, LI AI-ZHEN.RAMAN SCATTERING STUDIES OF MBE-GROWN GaAs/Si. Acta Physica Sinica, 1991, 40(6): 962-968.doi:10.7498/aps.40.962 |
| [14] |
Zhou Guo-liang Sheng Chi Fan Yong-liang Jiang Wei-dong Yu Ming-reng.MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERIZATION OF Ge_xSi_1-x_/Si STRAINED一AYER SUPERLATTICES. Acta Physica Sinica, 1991, 40(7): 1121-1128.doi:10.7498/aps.40.1121 |
| [15] |
ZHOU JIE, LU LI-WU, HAN ZHI-YONG, LIANG JI-BEN.A STUDY OF ELECTRONIC CHARACTERIZATION IN MOLECULAR BEAM EPITAXIALLY GROWN GaAs ON Si. Acta Physica Sinica, 1991, 40(11): 1827-1832.doi:10.7498/aps.40.1827 |
| [16] |
ZONG XIANG-FU, QIU SHAO-XIONG, YANG HENG-QING, HUANG CHANG-HE, CHEN JUN-YI, HU GANG, WU ZHONG-CHI.THE GROWTH OF GaSb/AlSb/GaAs STRAINED LAYER HETEROSTRUCTURES BY MBE. Acta Physica Sinica, 1990, 39(12): 1959-1964.doi:10.7498/aps.39.1959 |
| [17] |
CHEN KE-MING, JIN GAO-LONG, SHENG CHI, YU MING-REN.THE GROWTH DYNAMICS OF Si(111) MBE STUDIED BY RHEED INTENSITY OSCILLATIONS. Acta Physica Sinica, 1990, 39(12): 1945-1951.doi:10.7498/aps.39.1945 |
| [18] |
JIANG WEI-DONG, FAN YONG-LIANG, SHENG CHI, YU MING-REN.ELIMINATION OF P SEGREGATION DURING MOLECULAR BEAM EPITAXIAL GROWTH OF Si ON GaP (111) SUBSTRATE. Acta Physica Sinica, 1990, 39(9): 1429-1434.doi:10.7498/aps.39.1429 |
| [19] |
JIN GAO-LONG, CHEN KE-MING, SHENG CHI, ZHOU GUO-LIANG, JIANG WEI-DONG, ZHANG XIANG-JIU.OBSERVATION OF INTENSITY OSCILLATIONS OF RHEED DURING SILICON MOLECULAR BEAM EPITAXIAL GROWTH. Acta Physica Sinica, 1989, 38(3): 394-398.doi:10.7498/aps.38.394 |
| [20] |
ZHOU GUO-LIANG, CHEN KE-MING, TIAN LIANG-GUANG.LOW TEMPERATURE GROWTH OF THIN Ge FILM ON Si SUBSTRATES BY MOLECULAR BEAM EPITAXY. Acta Physica Sinica, 1988, 37(10): 1607-1612.doi:10.7498/aps.37.1607 |
下载: