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Hu Yi-Bin, Hao Zhi-Biao, Hu Jian-Nan, Niu Lang, Wang Lai, Luo Yi.Studies on the composition of InGaN/AlN quantum dots grown by molecular beam epitaxy. Acta Physica Sinica, 2012, 61(23): 237804.doi:10.7498/aps.61.237804 |
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Zhang Bing-Po, Cai Chun-Feng, Cai Xi-Kun, Wu Hui-Zhen, Wang Miao.Study of growth of [111]-oriented CdTe thin films by MBE. Acta Physica Sinica, 2012, 61(4): 046802.doi:10.7498/aps.61.046802 |
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Su Shao-Jian, Wang Wei, Zhang Guang-Ze, Hu Wei-Xuan, Bai An-Qi, Xue Chun-Lai, Zuo Yu-Hua, Cheng Bu-Wen, Wang Qi-Ming.Epitaxial growth of Ge0.975Sn0.025alloy films on Si(001) substrates by molecular beam epitaxy. Acta Physica Sinica, 2011, 60(2): 028101.doi:10.7498/aps.60.028101 |
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Zhao Ming-Hai, Sun Jing-Jing, Wang Dan, Zou Zhi-Qiang, Liang Qi.STM studies of the epitaxial growth of C60 molecules on Si(111)-7×7 surface. Acta Physica Sinica, 2010, 59(1): 636-642.doi:10.7498/aps.59.636 |
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Zhang Chong, Ye Hui, Zhang Lei, Huang-Fu You-Rui, Liu Xu.A study of RHEED pattern from the epitaxial growth of Si-Ge crystal. Acta Physica Sinica, 2009, 58(11): 7765-7772.doi:10.7498/aps.58.7765 |
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He Meng, Liu Guo-Zhen, Qiu Jie, Xing Jie, Lü Hui-Bin.Epitaxial growth of high quality TiN thin film on Si by laser molecular beam epitaxy. Acta Physica Sinica, 2008, 57(2): 1236-1240.doi:10.7498/aps.57.1236 |
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Luo Xiang-Dong, Ji Chang-Jian, Wang Yu-Qi, Wang Jian-Nong.Low energy oscillatory phenomena in photoreflectance and photo-modulation reflectance spectra of GaMnAs films grown by low temperature molecular-beam epitaxy. Acta Physica Sinica, 2008, 57(8): 5277-5283.doi:10.7498/aps.57.5277 |
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GUI QIAN, HUANG QI, CHEN HONG, ZHOU JUN-MING.Si AND GexSi1-x GROWTH MODE STUDY BY RHEED ON H-TERMINATED VICINAL Si SUBSTRATE. Acta Physica Sinica, 1996, 45(4): 647-654.doi:10.7498/aps.45.647 |
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ZHOU GUO-LIANG, SHENG CHI, FAN YONG-LIANG, JIANG WEI-DONG, YU MING-RBN.MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERI-ZATION OF GexSi1-x/Si STRAINED-LAYER SUPERLATTICES. Acta Physica Sinica, 1993, 42(7): 1121-1128.doi:10.7498/aps.42.1121-2 |
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HU FU-YI, LI AI-ZHEN.RAMAN SCATTERING STUDIES OF MBE-GROWN GaAs/Si. Acta Physica Sinica, 1991, 40(6): 962-968.doi:10.7498/aps.40.962 |
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Zhou Guo-liang Sheng Chi Fan Yong-liang Jiang Wei-dong Yu Ming-reng.MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERIZATION OF Ge_xSi_1-x_/Si STRAINED一AYER SUPERLATTICES. Acta Physica Sinica, 1991, 40(7): 1121-1128.doi:10.7498/aps.40.1121 |
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ZHOU JIE, LU LI-WU, HAN ZHI-YONG, LIANG JI-BEN.A STUDY OF ELECTRONIC CHARACTERIZATION IN MOLECULAR BEAM EPITAXIALLY GROWN GaAs ON Si. Acta Physica Sinica, 1991, 40(11): 1827-1832.doi:10.7498/aps.40.1827 |
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ZONG XIANG-FU, QIU SHAO-XIONG, YANG HENG-QING, HUANG CHANG-HE, CHEN JUN-YI, HU GANG, WU ZHONG-CHI.THE GROWTH OF GaSb/AlSb/GaAs STRAINED LAYER HETEROSTRUCTURES BY MBE. Acta Physica Sinica, 1990, 39(12): 1959-1964.doi:10.7498/aps.39.1959 |
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JIANG WEI-DONG, FAN YONG-LIANG, SHENG CHI, YU MING-REN.ELIMINATION OF P SEGREGATION DURING MOLECULAR BEAM EPITAXIAL GROWTH OF Si ON GaP (111) SUBSTRATE. Acta Physica Sinica, 1990, 39(9): 1429-1434.doi:10.7498/aps.39.1429 |
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CHEN KE-MING, ZHOU TIE-CHENG, FAN YONG-LIANG, SHENG CHI, YU MING-REN.THE EFFECT OF ELECTRON DIFFRACTION CONDITIONS ON RHEED INTENSITY OSCILLATIONS DURING Si(111) MBE. Acta Physica Sinica, 1990, 39(12): 1937-1944.doi:10.7498/aps.39.1937 |
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CHEN KE-MING, JIN GAO-LONG, SHENG CHI, YU MING-REN.THE GROWTH DYNAMICS OF Si(111) MBE STUDIED BY RHEED INTENSITY OSCILLATIONS. Acta Physica Sinica, 1990, 39(12): 1945-1951.doi:10.7498/aps.39.1945 |
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CHEN KE-MING, JIN GAO-LONG, SHENG CHI, ZHOU GUO-LIANG, JIANG WEI-DONG, ZHANG XIANG-JIU, YU MING-REN.PHASE-LOCKED EPITAXY OF Ge/Si SUPERLATTICES BY USING RHEED INTENSITY OSCILLATIONS. Acta Physica Sinica, 1990, 39(3): 408-415.doi:10.7498/aps.39.408 |
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CHEN KE-MING, JIN GAO-LONG, SHENG CHI, ZHOU GAO-LIANG, JIANO WEI-DONG, ZHANG XIANG-JIU, YU MING-REN.RHEED INTENSITY OSCILLATIONS IN THE PROCESS OF MOLECULAR BEAM EPITAXY GROWTH OF Ge AND Si ON Si SUBSTRATES. Acta Physica Sinica, 1990, 39(2): 237-244.doi:10.7498/aps.39.237 |
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.INTERFACIAL PROPERTIES OF Si/GaP(111) HETEROJUNCT10N GROWN BY MOLECULAR BEAM EPITAXY. Acta Physica Sinica, 1989, 38(8): 1265-1270.doi:10.7498/aps.38.1265 |
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ZHOU GUO-LIANG, CHEN KE-MING, TIAN LIANG-GUANG.LOW TEMPERATURE GROWTH OF THIN Ge FILM ON Si SUBSTRATES BY MOLECULAR BEAM EPITAXY. Acta Physica Sinica, 1988, 37(10): 1607-1612.doi:10.7498/aps.37.1607 |
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