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You Ming-Hui, Li Xue, Li Shi-Jun, Liu Guo-Jun.Growth of lattice matched InAs/AlSb superlattices by molecular beam epitaxy. Acta Physica Sinica, 2023, 72(1): 014203.doi:10.7498/aps.72.20221383 |
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Su Shao-Jian, Zhang Dong-Liang, Zhang Guang-Ze, Xue Chun-Lai, Cheng Bu-Wen, Wang Qi-Ming.High-quality Ge1-xSnx alloys grown on Ge(001) substrates by molecular beam epitaxy. Acta Physica Sinica, 2013, 62(5): 058101.doi:10.7498/aps.62.058101 |
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Su Shao-Jian, Wang Wei, Zhang Guang-Ze, Hu Wei-Xuan, Bai An-Qi, Xue Chun-Lai, Zuo Yu-Hua, Cheng Bu-Wen, Wang Qi-Ming.Epitaxial growth of Ge0.975Sn0.025alloy films on Si(001) substrates by molecular beam epitaxy. Acta Physica Sinica, 2011, 60(2): 028101.doi:10.7498/aps.60.028101 |
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Zhang Chong, Ye Hui, Zhang Lei, Huang-Fu You-Rui, Liu Xu.A study of RHEED pattern from the epitaxial growth of Si-Ge crystal. Acta Physica Sinica, 2009, 58(11): 7765-7772.doi:10.7498/aps.58.7765 |
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Luo Xiang-Dong, Ji Chang-Jian, Wang Yu-Qi, Wang Jian-Nong.Low energy oscillatory phenomena in photoreflectance and photo-modulation reflectance spectra of GaMnAs films grown by low temperature molecular-beam epitaxy. Acta Physica Sinica, 2008, 57(8): 5277-5283.doi:10.7498/aps.57.5277 |
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He Meng, Liu Guo-Zhen, Qiu Jie, Xing Jie, Lü Hui-Bin.Epitaxial growth of high quality TiN thin film on Si by laser molecular beam epitaxy. Acta Physica Sinica, 2008, 57(2): 1236-1240.doi:10.7498/aps.57.1236 |
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Liu Lin-Sheng, Liu Su, Wang Wen-Xin, Zhao Hong-Ming, Liu Bao-Li, Jiang Zhong-Wei, Gao Han-Chao, Wang Jia, Huang Qing-An, Chen Hong, Zhou Jun-Ming.Optimization of GaAs (110) quantum well material growth technology by reflection high energy electron diffraction. Acta Physica Sinica, 2007, 56(6): 3355-3359.doi:10.7498/aps.56.3355 |
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Yan Long, Zhang Yong-Ping, Peng Yi-Ping, Pang Shi-Jin, Gao Hong-Jun.. Acta Physica Sinica, 2002, 51(5): 1017-1021.doi:10.7498/aps.51.1017 |
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Wang Jie, Yu Gen-Cai, Zhu Chang-Sheng, Wang Xun.. Acta Physica Sinica, 1995, 44(9): 1471-1479.doi:10.7498/aps.44.1471 |
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ZHOU GUO-LIANG, SHENG CHI, FAN YONG-LIANG, JIANG WEI-DONG, YU MING-RBN.MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERI-ZATION OF GexSi1-x/Si STRAINED-LAYER SUPERLATTICES. Acta Physica Sinica, 1993, 42(7): 1121-1128.doi:10.7498/aps.42.1121-2 |
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QIAO HAO, ZI JIAN, XU ZHI-ZHONG, ZHANG KAI-MING.BAND STRUCTURE OF Si/Ge STRAINED LAYER SUPERLATTICE. Acta Physica Sinica, 1993, 42(8): 1317-1323.doi:10.7498/aps.42.1317 |
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WANG YIN-YUE, XU HUAI-ZHE, CHEN GUANG-HUA.INVESTIGATION ON THERMAL STABILITY OF REACTIVE- SPUTTERING a-Si:H/a-Ge:H SUPERLATTICES. Acta Physica Sinica, 1992, 41(2): 302-305.doi:10.7498/aps.41.302 |
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Zhou Guo-liang Sheng Chi Fan Yong-liang Jiang Wei-dong Yu Ming-reng.MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERIZATION OF Ge_xSi_1-x_/Si STRAINED一AYER SUPERLATTICES. Acta Physica Sinica, 1991, 40(7): 1121-1128.doi:10.7498/aps.40.1121 |
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CHEN KE-MING, ZHOU GUO-LIANG, SHENG CHI, JIANG WEI-DONG, ZHANG XIANG-JIU.THE GROWTH CHARACTERISTICS AND SURFACE RECONS-TRUCTION OF Ge/Si (111) AND Si/Ge(111). Acta Physica Sinica, 1990, 39(4): 599-606.doi:10.7498/aps.39.599 |
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CHEN KE-MING, ZHOU TIE-CHENG, FAN YONG-LIANG, SHENG CHI, YU MING-REN.THE EFFECT OF ELECTRON DIFFRACTION CONDITIONS ON RHEED INTENSITY OSCILLATIONS DURING Si(111) MBE. Acta Physica Sinica, 1990, 39(12): 1937-1944.doi:10.7498/aps.39.1937 |
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ZI JIAN, ZHANG KAI-MING.GEOMETRICAL CONFIGURATIONS OF (Si)n/(Ge)n SUPERLATTICES. Acta Physica Sinica, 1990, 39(10): 1640-1646.doi:10.7498/aps.39.1640 |
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CHEN KE-MING, JIN GAO-LONG, SHENG CHI, ZHOU GAO-LIANG, JIANO WEI-DONG, ZHANG XIANG-JIU, YU MING-REN.RHEED INTENSITY OSCILLATIONS IN THE PROCESS OF MOLECULAR BEAM EPITAXY GROWTH OF Ge AND Si ON Si SUBSTRATES. Acta Physica Sinica, 1990, 39(2): 237-244.doi:10.7498/aps.39.237 |
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JIN GAO-LONG, CHEN KE-MING, SHENG CHI, ZHOU GUO-LIANG, JIANG WEI-DONG, ZHANG XIANG-JIU.OBSERVATION OF INTENSITY OSCILLATIONS OF RHEED DURING SILICON MOLECULAR BEAM EPITAXIAL GROWTH. Acta Physica Sinica, 1989, 38(3): 394-398.doi:10.7498/aps.38.394 |
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ZHOU GUO-LIANG, CHEN KE-MING, TIAN LIANG-GUANG.LOW TEMPERATURE GROWTH OF THIN Ge FILM ON Si SUBSTRATES BY MOLECULAR BEAM EPITAXY. Acta Physica Sinica, 1988, 37(10): 1607-1612.doi:10.7498/aps.37.1607 |
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