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Fan Zhi-Dong, Zhou Zi-Chun, Liu Chuo, Ma Lei, Peng Ying-Cai.Photoluminescence properties of Eu doped Si nanowires. Acta Physica Sinica, 2015, 64(14): 148103.doi:10.7498/aps.64.148103 |
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Deng Quan, Ma Yong, Yang Xiao-Hong, Ye Li-Juan, Zhang Xue-Zhong, Zhang Qi, Fu Hong-Wei.Photoluminescence and Raman properties of Sb-doped ZnO thin film. Acta Physica Sinica, 2012, 61(24): 247701.doi:10.7498/aps.61.247701 |
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Kang Kun-Yong, Deng Shu-Kang, Shen Lan-Xian, Sun Qi-Li, Hao Rui-Ting, Hua Qi-Lin, Tang Run-Sheng, Yang Pei-Zhi, Li Ming.Effect of annealing on crystalline property of poly-Si thin-film by Ge-induce crystallization. Acta Physica Sinica, 2012, 61(19): 198101.doi:10.7498/aps.61.198101 |
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Liu Xian-Ming, Li Bin-Cheng, Gao Wei-Dong, Han Yan-Ling.Infrared spectroscopic ellipsometry studies of ion-implanted and annealed silicon wafers. Acta Physica Sinica, 2010, 59(3): 1632-1637.doi:10.7498/aps.59.1632 |
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Zheng Li-Ren, Huang Bai-Biao, Wei Ji-Yong.Synthesis of silicon oxide nanocluster and C-Si-O nanospheres morphology and photoluminscence Fourier transform infrared spectroscopy study. Acta Physica Sinica, 2009, 58(12): 8612-8616.doi:10.7498/aps.58.8612 |
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Wei Wei, Liu Ming, Qu Sheng-Wei, Zhang Qing-Yu.Photoluminescence of as-grown and annealed ZnO films on Ti-buffered Si(111) substrates. Acta Physica Sinica, 2009, 58(8): 5736-5743.doi:10.7498/aps.58.5736 |
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Miao Jing-Wei, Wang Pei-Lu, Zhu Zhou-Sen, Yuan Xue-Dong, Wang Hu, Yang Chao-Wen, Shi Mian-Gong, Miao Lei, Sun Wei-Li, Zhang Jing, Liao Xue-Hua.Photoluminescence spectrum of monocrystalline Si implanted by nitrogen cluster ions. Acta Physica Sinica, 2008, 57(4): 2174-2178.doi:10.7498/aps.57.2174 |
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Zhou Li-Hong, Zhang Chong-Hong, Li Bing-Sheng, Yang Yi-Tao, Song Yin.Photoluminescence of Ar+ implanted sapphire before and after annealing. Acta Physica Sinica, 2008, 57(4): 2562-2566.doi:10.7498/aps.57.2562 |
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Zhang Xiao-Dong, Lin De-Xu, Li Gong-Ping, You Wei, Zhang Li-Min, Zhang Yu, Liu Zheng-Min.Broadband yellow luminescence in the photoluminescence spectra of n-GaN implanted by the different ions. Acta Physica Sinica, 2006, 55(10): 5487-5493.doi:10.7498/aps.55.5487 |
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Fu Shi-Liu, Dai Jun, Ding Qiu-Ke, Zhao Wei-Ren.Investigation of the spectra of Sr2CeO4 due to charge transfer transition. Acta Physica Sinica, 2005, 54(5): 2369-2373.doi:10.7498/aps.54.2369 |
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Li Shan-Feng, Zhang Qing-Yu.Absorption and photoluminescence properties Er/Yb co-doped soda-silicate glasses. Acta Physica Sinica, 2005, 54(11): 5462-5467.doi:10.7498/aps.54.5462 |
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Zhang Li, Jiang Chang-Zhong, Ren Feng, Chen Hai-Bo, Shi Ying, Fu Qiang.Optical absorption of nanoclusters by sequentially implanting into SiO2 glass and subsequently annealing in a selected atmosphere. Acta Physica Sinica, 2004, 53(9): 2910-2914.doi:10.7498/aps.53.2910 |
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Zhou Jian-Ping, Chen Nuo-Fu, Song Shu-Lin, Chai Chun-Lin, Yang Shao-Yan, Liu Zhi-Kai, Lin Lan-Ying.Magnetic properties and rectifying behaviour of silicon doped with gadolinium. Acta Physica Sinica, 2003, 52(6): 1469-1473.doi:10.7498/aps.52.1469 |
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FAN YONG-NIAN, YE HENG-QIANG.ORDERED STRUCTURE FORMED ON Mo(lll) SURFACE BY BOMBARDMENT OF NITROGEN IONS AND ANNEALING. Acta Physica Sinica, 1986, 35(5): 672-676.doi:10.7498/aps.35.672 |
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XIA RI-YUAN.IMPURITY OUT-DIFFUSION MODEL IN RECRYSTALLIZATION OF AMORPHOUS LAYER DUE TO HIGH DOSE ION IMPLANTATION. Acta Physica Sinica, 1980, 29(5): 566-576.doi:10.7498/aps.29.566 |