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Wang Xiao-Yi, Wang Xi, Wang Jun, Cheng De-Qiang, Wang Yue.Effects of V2O5-Al2O3sintering aid on properties of low temperature sintered Li-Zn microwave ferrites. Acta Physica Sinica, 2023, 72(3): 037501.doi:10.7498/aps.72.20221723 |
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Yang Xin-Xin, Wei Xiao-Xu, Wang Jun-Zhuan, Shi Yi, Zheng You-Liao.Properties in vanadium dioxide thin film synthesized from V2O5 annealed in H2/Ar ambience. Acta Physica Sinica, 2013, 62(22): 227201.doi:10.7498/aps.62.227201 |
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Chen Xiao-Bo, Yang Guo-Jian, Li Song, Yang Xiao-Dong, Liu Da-He, Chen Ying, Ding Feng-Lian, Wu Zheng-Long.Infrared quantum cutting of ErP5O14 noncrystalline glass. Acta Physica Sinica, 2012, 61(3): 037804.doi:10.7498/aps.61.037804 |
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Zhao Geng, Cheng Xiao-Man, Tian Hai-Jun, Du Bo-Qun, Liang Xiao-Yu, Wu Feng.The influence of modified electrodes by V2O5 film on the performance of ambipolar organic field-effect transistors based on C60/Pentacene. Acta Physica Sinica, 2012, 61(21): 218502.doi:10.7498/aps.61.218502 |
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Chen Ying, Chen Xiao-Bo, Zhang Hui-Min, Xu Xiao-Ling, Wang Ce.Influence of improved anti-Stokes energy transfer between rare earth ions in ErP5O14 noncrystal on dynamic study. Acta Physica Sinica, 2011, 60(7): 077802.doi:10.7498/aps.60.077802 |
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Di Guo-Qing.Surface morphology and optical properties of Ta2O5 films prepared by radio frequency sputtering. Acta Physica Sinica, 2011, 60(3): 038101.doi:10.7498/aps.60.038101 |
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Yuan Wen-Jia, Zhang Yue-Guang, Shen Wei-Dong, Ma Qun, Liu Xu.Characteristics of Nb2O5 thin films deposited by ion beam sputtering. Acta Physica Sinica, 2011, 60(4): 047803.doi:10.7498/aps.60.047803 |
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Wang Jian-Yuan, Chen Chang-Le, Zhai Wei, Jin Ke-Xin.Directional dendrite growth of SCN-3wt% H2O under shear flow. Acta Physica Sinica, 2009, 58(9): 6554-6559.doi:10.7498/aps.58.6554 |
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Zuo Fang-Yuan, Wang Yang, Wu Yi-Qun, Lai Tian-Shu.Study of ultrafast carrier dynamics in amorphous Ge2Sb2Te5 film by femtosecond-resolved reflectivity spectroscopy. Acta Physica Sinica, 2009, 58(10): 7250-7254.doi:10.7498/aps.58.7250 |
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Zhang Hong-Ying, Wu Shi-Gang.The dynamic process of thin films damage induced by femtosecond laser. Acta Physica Sinica, 2007, 56(9): 5314-5317.doi:10.7498/aps.56.5314 |
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Ye Chao, Ning Zhao-Yuan, Cheng Shan-Hua, Xin Yu, Xu Sheng-Hua.Effect of C═C content on I-V characteristics of fluorinated amorphous carbon thin films. Acta Physica Sinica, 2004, 53(5): 1496-1500.doi:10.7498/aps.53.1496 |
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Wang Wei, Zhang Xi-Juan, Yang Cui-Hong, Cheng Hai-Ying.ＴｈｅｍａｇｎｅｔｏｃｒｙｓｔａｌｌｉｎｅａｎｉｓｏｔｒｏｐｙｏｆＥｒ3 Ｇａ5Ｏ1 2ｕｎｄｅｒｈｉｇｈｍａｇｎｅｔｉｃｆｉｅｌｄ. Acta Physica Sinica, 2002, 51(12): 2846-2848.doi:10.7498/aps.51.2846 |
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Li Jin-Hua, Yuan Ning-Yi, H L W Chan, Lin Cheng-Lu.. Acta Physica Sinica, 2002, 51(8): 1788-1792.doi:10.7498/aps.51.1788 |
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WANG SHAO-WEI, LU WEI, WANG HONG, WANG DONG, WANG MIN, SHEN XUE-CHU.C-V CHARACTERISTICS OF Bi2Ti2O7 THIN FILMS ON n-Si(100). Acta Physica Sinica, 2001, 50(12): 2461-2465.doi:10.7498/aps.50.2461 |
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Zhang Bo-Lin, Wei Jie, Zhang Lian-Di, Xia Zhu-Hong, Gu Xue-Jun, Zhang Bing.. Acta Physica Sinica, 2000, 49(4): 679-682.doi:10.7498/aps.49.679 |
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ZHANG LIAN-DI, ZHANG BIN, FANG LI, WEI JIE, GUO WEN-YUE, ZHANG SHU-DONG, CAI JI-YE.MECHANISM OF MULTIPHOTON IONIZATION OF CH3I IN THE 440—510nm REGION. Acta Physica Sinica, 1998, 47(9): 1465-1469.doi:10.7498/aps.47.1465 |
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ZHAO YONG, ZHUGE XIANG-BIN, HE YE-YE.CHARACTERISTICS OF TEMPERATURE DEPENDENCE OF CRITICAL CURRENT IN TYPICAL GRANULAR SYSTEM YBa2Cu3O7/V2O5. Acta Physica Sinica, 1994, 43(10): 1693-1703.doi:10.7498/aps.43.1693 |
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SU FANG, SU JUN, JIN SI-ZHAO.INVESTIGATION ON ELECTRICAL PROPERTIES AND ESR OF AMORPHOUS Li+ CONDUCTOR B2O3-0.7Li2O-0.7LiCl-xAl2O3-0.1V2O5. Acta Physica Sinica, 1992, 41(3): 448-458.doi:10.7498/aps.41.448 |
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SU FANG, XU WEI, SU JUN.INVESTIGATION ON IONIC CONDUCTIVITY AND STRUCTURE OF AMORPHOUS LITHIUM IONIC CONDUCTOR P2O5-0.7Li2O-0.4LiCl-0.1Al2O3. Acta Physica Sinica, 1991, 40(4): 596-603.doi:10.7498/aps.40.596 |
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CHUI WAN-QIU, RUAN LI-JIAN.STUDY ON THE ELECTRICAL PROPERTIES AND MAGNETIC RESONANCE OF NONCRYSTALLINE MATERIALS IN THE Li2O-P2O5-V2O5 SYSTEM. Acta Physica Sinica, 1987, 36(3): 322-331.doi:10.7498/aps.36.322 |
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