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Zhou Xin, Gao Ren-Bin, Tan Shi-Hua, Peng Xiao-Fang, Jiang Xiang-Tao, Bao Ben-Gang.Influence of multi-cavity dislocation distribution on thermal conductance in graphene nanoribbons. Acta Physica Sinica, 2017, 66(12): 126302.doi:10.7498/aps.66.126302 |
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Bai Min, Xuan Rong-Xi, Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Shu Bin.Hole scattering and mobility in compressively strained Ge/(001)Si1-xGex. Acta Physica Sinica, 2015, 64(3): 038501.doi:10.7498/aps.64.038501 |
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Cui Wei, Wang Chong, Cui Can, Shi Zhang-Sheng, Yang Yu.Asymmetry of hole states in vertically coupled Ge double quantum dot. Acta Physica Sinica, 2014, 63(22): 227301.doi:10.7498/aps.63.227301 |
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Zhang Yu-Ping, Liu Ling-Yu, Chen Qi, Feng Zhi-Hong, Wang Jun-Long, Zhang Xiao, Zhang Hong-Yan, Zhang Hui-Yun.Effect of cooling of electron-hole plasma in electrically pumped graphene layer structures with split gates. Acta Physica Sinica, 2013, 62(9): 097202.doi:10.7498/aps.62.097202 |
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Tang Nai-Yun.Bonding-antibonding ground state transition in coupled quantum dots. Acta Physica Sinica, 2013, 62(5): 057301.doi:10.7498/aps.62.057301 |
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Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Wang Xiao-Yan, Wang Guan-Yu.Hole scattering mechanism in tetragonal strained Si. Acta Physica Sinica, 2012, 61(5): 057304.doi:10.7498/aps.61.057304 |
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Niu Lian-Bin, Guan Yun-Xia.Fullerene-doped hole transport NPB layer in organic light-emitting devices. Acta Physica Sinica, 2009, 58(7): 4931-4935.doi:10.7498/aps.58.4931 |
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Zhu De-Xi, Zhen Hong-Yu, Ye Hui, Liu Xu.Polarized blue polymer light-emitting diodes utilizing rubbed hole injection layers. Acta Physica Sinica, 2009, 58(1): 596-601.doi:10.7498/aps.58.596 |
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Guo Bao-Zeng, Gong Na, Shi Jian-Ying, Wang Zhi-Yu.Monte Carlo simulation of the hole transport properties for wurtzite GaN. Acta Physica Sinica, 2006, 55(5): 2470-2475.doi:10.7498/aps.55.2470 |
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Liu Nai-Xin, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Zhang Nian-Guo, Li Tong, Xing Yan-Hui, Han Jun, Guo Xia, Shen Guang-Di.Investigation of high hole concentration Mg-doped InGaN epilayer. Acta Physica Sinica, 2006, 55(9): 4951-4955.doi:10.7498/aps.55.4951 |
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Xie Zun, An Zhong, Li You-Cheng, Liu Ying.Electrostatic pinning effects on localized vibrational modes around a bipolaron in polythiophene. Acta Physica Sinica, 2005, 54(8): 3922-3926.doi:10.7498/aps.54.3922 |
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Yang Hong-Guan, Shi Yi, Lü Jin, Pu Lin, Zhang Rong, Zheng You-Dou.Hole storage characteristics in Ge/Si hetero-nanocrystal-based memories. Acta Physica Sinica, 2004, 53(4): 1211-1216.doi:10.7498/aps.53.1211 |
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Liu Wen-Kai, Lin Shi-Ming, Zhang Cun-Shan.. Acta Physica Sinica, 2002, 51(9): 2052-2056.doi:10.7498/aps.51.2052 |
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ZOU YA-MING, T.KAMBARA, Y.KANAI, Y.AWAYA, C.P.BHALLA.2s AND 2p VACANCY PRODUCTION PROCESS OF SWIFT Ar ION IN SOLID. Acta Physica Sinica, 1997, 46(1): 49-55.doi:10.7498/aps.46.49 |
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LIU YAN-ZHANG, FAN XI-QING.INFRARED DIVERGENCE RESPONSE IN REORIENTATIONAL RELAXATION PROCESS OF Al3+-HOLE IN α QUARTZ. Acta Physica Sinica, 1994, 43(2): 332-339.doi:10.7498/aps.43.332 |
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ZHAO YONG, HE YE-YE, ZHANG HAN, ZHUGE XIANG-BIN, XU ZHU-AN, LI TAO-YU, ZHANG QI-RUI, TANG XIAO-MING, ZHAO PENG-CHENG.VARIATION OF HOLE CONCENTRATION INDUCED BY ELEMENT SUBSTITUTION AT Y AND Cu(I) SITES IN YBa2Cu3Oy SYSTEM. Acta Physica Sinica, 1991, 40(8): 1349-1355.doi:10.7498/aps.40.1349 |
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HUANG HONG-BIN.COHERENT STATES, SQUEEZED FLUCTUATION, AND RECOMBINATION RADIATION OF ELETRON-HOLE PAIRS IN SEMICONDUCTOR. Acta Physica Sinica, 1989, 38(12): 1958-1967.doi:10.7498/aps.38.1958 |
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SU WEN-HUEI, LIU WEI-NA, HE PENG-MIN, QIU SHU-ZHEN.A THEORETICAL CALCULATION OF THE ENERGIES OF VACANCY RELAXATION AND VACANCY FORMATION IN THE FACE-CENTRED CUBIC METALS. Acta Physica Sinica, 1965, 21(10): 1767-1775.doi:10.7498/aps.21.1767 |
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SZE SHIH-YUAN.ORDERING AND VACANCY DIFFUSION IN AuCu3. Acta Physica Sinica, 1957, 13(4): 245-251.doi:10.7498/aps.13.245 |
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