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Liu Hua-Song, Yang Xiao, Wang Li-Shuan, Jiang Cheng-Hui, Liu Dan-Dan, Ji Yi-Qin, Zhang Feng, Chen De-Ying.Gaussian oscillator model of the dielectric constant of SiO2 thin film in infrared range. Acta Physica Sinica, 2017, 66(5): 054211.doi:10.7498/aps.66.054211 |
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Wang Dang-Hui, Xu Tian-Han, Song Hai-Yang.Thermal expansion behaviors of epitaxial film for wurtzite GaN studied by using temperature-dependent Raman scattering. Acta Physica Sinica, 2016, 65(13): 130702.doi:10.7498/aps.65.130702 |
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Guo Zhao-Long, Zhao Hai-Xin, Zhao Wei.Preparation and characterization of self-cleaning and anti-reflection ZnO-SiO2 nanometric films. Acta Physica Sinica, 2016, 65(6): 064206.doi:10.7498/aps.65.064206 |
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Su Dan, Dou Xiu-Ming, Ding Kun, Wang Hai-Yan, Ni Hai-Qiao, Niu Zhi-Chuan, Sun Bao-Quan.Extraction efficiency enhancement of single InAs quantum dot emission through light scattering on the Au nanoparticles. Acta Physica Sinica, 2015, 64(23): 235201.doi:10.7498/aps.64.235201 |
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Wang Hong-Pei, Wang Guang-Long, Yu Ying, Xu Ying-Qiang, Ni Hai-Qiao, Niu Zhi-Chuan, Gao Feng-Qi.Properties of δ doped GaAs/AlxGa1-xAs 2DEG with embedded InAs quantum dots. Acta Physica Sinica, 2013, 62(20): 207303.doi:10.7498/aps.62.207303 |
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Liu Hua-Song, Ji Yi-Qin, Jiang Yu-Gang, Wang Li-Shuan, Leng Jian, Sun Peng, Zhuang Ke-Wen.Study on internal short-range order microstructure characteristic of SiO2 thin film. Acta Physica Sinica, 2013, 62(18): 187801.doi:10.7498/aps.62.187801 |
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Li Wen-Sheng, Sun Bao-Quan.Optical transition of the charged excitons in InAs single quantum dots. Acta Physica Sinica, 2013, 62(4): 047801.doi:10.7498/aps.62.047801 |
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Yang Jian-Ge, Sun Cheng-Lin, Yang Yong-Bo, Gao Shu-Qin, Jiang Yong-Heng, Li Zuo-Wei.Study of Fermi resonance using the method of varying solution refractive index. Acta Physica Sinica, 2012, 61(3): 037802.doi:10.7498/aps.61.037802 |
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Jiang Hong-Liang, Zhang Rong-Jun, Zhou Hong-Ming, Yao Duan-Zheng, Xiong Gui-Guang.Parametric properties of the electron spin relaxation due to spin-orbit interaction in InAs quantum dots. Acta Physica Sinica, 2011, 60(1): 017204.doi:10.7498/aps.60.017204 |
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Zhou Hong-Juan, Zhen Cong-Mian, Zhang Yong-Jin, Zhao Cui-Lian, Ma Li, Hou Deng-Lu.Preparation and magnetism of the N doped SiO2 thin film. Acta Physica Sinica, 2010, 59(5): 3499-3503.doi:10.7498/aps.59.3499 |
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Cheng Li, Xiong Rui, Shi Jing.Raman scattering study of the spin ladder compound Sr14Cu24O41+δ. Acta Physica Sinica, 2010, 59(7): 5078-5084.doi:10.7498/aps.59.5078 |
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Wang Chong, Liu Zhao-Lin, Li Tian-Xin, Chen Ping-Ping, Cui Hao-Yang, Xiao Jun, Zhang Shu, Yang Yu, Lu Wei.The effect of the inserted AlGaAs films on the behaviors of InAs quantum dot detector. Acta Physica Sinica, 2008, 57(2): 1155-1160.doi:10.7498/aps.57.1155 |
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Song Shu-Fang, Chen Wei-De, Xu Zhen-Jia, Xu Xu-Rong.Study on optical properties of Er/Er+O doped GaN thin films. Acta Physica Sinica, 2007, 56(3): 1621-1626.doi:10.7498/aps.56.1621 |
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Wang Rui-Min, Chen Guang-De, Zhu You-Zhang.Micro-Raman scattering study of hexagonal InGaN epitaxial layer. Acta Physica Sinica, 2006, 55(2): 914-919.doi:10.7498/aps.55.914 |
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Liu Xiao-Dong, Ni Pei-Gen, Cheng Bing-Ying, Zhang Dao-Zhong.Raman scattering of ethanol solvent in a photonic crystal with a variational lattice constant. Acta Physica Sinica, 2004, 53(9): 3059-3064.doi:10.7498/aps.53.3059 |
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SHANG YE-CHUN, ZHANG YI-MEN, ZHANG YU-MING.MONTE CARLO STUDY ON INTERFACE ROUGHNESS DEPENDENCE OF ELECTRON MOBILITY IN 6H-SiC INVERSION LAYERS. Acta Physica Sinica, 2001, 50(7): 1350-1354.doi:10.7498/aps.50.1350 |
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ZHENG HANG.THEORETICAL ANALYSIS OF THE TWO-MAGNON RAMAN SPECTRA OF RbNiF3. Acta Physica Sinica, 1982, 31(12): 13-27.doi:10.7498/aps.31.13 |
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