[1] |
Jiang Mei-Yan, Zhu Zheng-Jie, Chen Cheng-Ke, Li Xiao, Hu Xiao-Jun.Microstructural and electrochemical properties of sulfur ion implanted nanocrystalline diamond films. Acta Physica Sinica, 2019, 68(14): 148101.doi:10.7498/aps.68.20190394 |
[2] |
Liu Yuan, He Hong-Yu, Chen Rong-Sheng, Li Bin, En Yun-Fei, Chen Yi-Qiang.Low-frequency noise in hydrogenated amorphous silicon thin film transistor. Acta Physica Sinica, 2017, 66(23): 237101.doi:10.7498/aps.66.237101 |
[3] |
Wang Rui, Hu Xiao-Jun.The microstructural and electrochemical properties of oxygen ion implanted nanocrystalline diamond films. Acta Physica Sinica, 2014, 63(14): 148102.doi:10.7498/aps.63.148102 |
[4] |
Gu Shan-Shan, Hu Xiao-Jun, Huang Kai.Effects of annealing temperature on the microstructure and p-type conduction of B-doped nanocrystalline diamond films. Acta Physica Sinica, 2013, 62(11): 118101.doi:10.7498/aps.62.118101 |
[5] |
Yang Duo, Zhong Ning, Shang Hai-Long, Sun Shi-Yang, Li Ge-Yang.Microstructures and mechanical properties of (Ti, N)/Al nanocomposite films by magnetron sputtering. Acta Physica Sinica, 2013, 62(3): 036801.doi:10.7498/aps.62.036801 |
[6] |
Kang Kun-Yong, Deng Shu-Kang, Shen Lan-Xian, Sun Qi-Li, Hao Rui-Ting, Hua Qi-Lin, Tang Run-Sheng, Yang Pei-Zhi, Li Ming.Effect of annealing on crystalline property of poly-Si thin-film by Ge-induce crystallization. Acta Physica Sinica, 2012, 61(19): 198101.doi:10.7498/aps.61.198101 |
[7] |
Hu Heng, Hu Xiao-Jun, Bai Bo-Wen, Chen Xiao-Hu.Effects of annealing time on the microstructural and electrochemical properties of B-doped nanocrystalline diamond films. Acta Physica Sinica, 2012, 61(14): 148101.doi:10.7498/aps.61.148101 |
[8] |
Chen Xiao-Xue, Yao Ruo-He.DC characteristic research based on surface potential for a-Si:H thin-film transistor. Acta Physica Sinica, 2012, 61(23): 237104.doi:10.7498/aps.61.237104 |
[9] |
Qiang Lei, Yao Ruo-He.Distributions of the threshold voltage and the temperature in the channel of amorphous silicon thin film transistors. Acta Physica Sinica, 2012, 61(8): 087303.doi:10.7498/aps.61.087303 |
[10] |
Zhang Zeng-Yuan, Gao Xiao-Yong, Feng Hong-Liang, Ma Jiao-Min, Lu Jing-Xiao.Effect of vacuum thermal-annealing temperatures on the microstructure and optical properties of single-phased Ag2O film. Acta Physica Sinica, 2011, 60(3): 036107.doi:10.7498/aps.60.036107 |
[11] |
Wang Li-Hong, You Jing-Lin, Wang Yuan-Yuan, Zheng Shao-Bo, Simon Patrick, Hou Min, Ji Zi-Fang.Temperature dependent Raman spectra and micro-structure study of hexagonal MgTiO3 crystal. Acta Physica Sinica, 2011, 60(10): 104209.doi:10.7498/aps.60.104209 |
[12] |
Duan Bao-Xing, Yang Yin-Tang.Calculation of Raman shifts of Si(1-x)Gex and amorphous silicon using Keating model. Acta Physica Sinica, 2009, 58(10): 7114-7118.doi:10.7498/aps.58.7114 |
[13] |
Liu Xue-Qin, Han Guo-Jian, Huang Chun-Kui, Lan Wei.Thickness dependence of microstructure for La0.9Sr0.1MnO3/Si films determined by micro-Raman spectroscopy. Acta Physica Sinica, 2009, 58(11): 8008-8013.doi:10.7498/aps.58.8008 |
[14] |
Li Shi-Bin, Wu Zhi-Ming, Yuan Kai, Liao Nai-Man, Li Wei, Jiang Ya-Dong.Study on thermal conductivity of hydrogenated amorphous silicon films. Acta Physica Sinica, 2008, 57(5): 3126-3131.doi:10.7498/aps.57.3126 |
[15] |
Huang Rui, Lin Xuan-Ying, Yu Yun-Peng, Lin Kui-Xun, Zhu Zu-Song, Wei Jun-Hong.Effect of hydrogen dilution on structure and optical properties of polycrystalline silicon films. Acta Physica Sinica, 2006, 55(5): 2523-2528.doi:10.7498/aps.55.2523 |
[16] |
Liu Xiao-Bing, Shi Xiang-Hua, Liao Tai-Chang, Ren Peng, Liu Yue, Liu Yi, Xiong Zu-Hong, Ding Xun-Min, Hou Xiao-Yuan.The microstructure and characteristics of luminescent porous silicon film prepared by the physicochemical sonic-vacating method. Acta Physica Sinica, 2005, 54(1): 416-421.doi:10.7498/aps.54.416 |
[17] |
Zhou Bing-Qing, Liu Feng-Zhen, Zhu Mei-Fang, Gu Jin-Hua, Zhou Yu-Qin, Liu Jin-Long, Dong Bao-Zhong, Li Guo-Hua, Ding Kun.The microstructure of hydrogenated microcrystalline silicon thin films studied by small-angle x-ray scattering. Acta Physica Sinica, 2005, 54(5): 2172-2175.doi:10.7498/aps.54.2172 |
[18] |
Xu Yan-Yue, Kong Guang-Lin, Zhang Shi-Bin, Hu Zhi-Hua, Zeng Xiang-Bo, Diao Hong-Wei, Liao Xian-Bo.Preparation and characterization of the stable nc-Si/a-Si:H films. Acta Physica Sinica, 2003, 52(6): 1465-1468.doi:10.7498/aps.52.1465 |
[19] |
Wang Yong-Qian, Chen Wei-De, Chen Chang-Yong, Diao Hong-Wei, Zhang Shi-Ben, Xu Yan-Yue, Kong Guang-Lin, Liao Xian-Bo.. Acta Physica Sinica, 2002, 51(7): 1564-1570.doi:10.7498/aps.51.1564 |
[20] |
WANG YONG-QIAN, CHEN CHANG-YONG, CHEN WEI-DE, YANG FU-HUA, DIAO HONG-WEI, XU ZHEN-JIA, ZHANG SHI-BIN, KONG GUANG-LIN, LIAO XIAN-BO.THE MICROSTRUCTURE AND ITS HIGH-TEMPERATURE ANNEALING BEHAVIOURS OF a-Si∶O∶H FILM. Acta Physica Sinica, 2001, 50(12): 2418-2422.doi:10.7498/aps.50.2418 |