The special physicochemical environment caused by sonic_vacating provides an important outlet for the preparation of highly efficient luminescent porous silicon films.Experimental results show that sonic_chemical treatment is an effective t echnology for the improvement of the microstructure of porous silicon,and the luminescent efficiency and stability thereof.Luminescent porous silicon films,prep ared by ultrasonic-enhanced anode electrochemical etching,display better qualiti es than the samples prepared by conventionai methods widely used at present.This ultrasonic_chemical effect roots in sonic_vacating,i.e. the generation,formatio n and rapid collapse of bubbles in the etching solution.In the process of the po rous silicon being etched,the escape rate and caving_in of hydrogen bubbles in t he pores is increased as a result of the work of the ultrasonic waves,which is h elpful to the vertical etching of the pores.