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Zhang Hong, Guo Hong-Xia, Pan Xiao-Yu, Lei Zhi-Feng, Zhang Feng-Qi, Gu Zhao-Qiao, Liu Yi-Tian, Ju An-An, Ouyang Xiao-Ping.Transport process and energy loss of heavy ions in silicon carbide. Acta Physica Sinica, 2021, 70(16): 162401.doi:10.7498/aps.70.20210503 |
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Lu Yuan-Yuan, Lu Gui-Hua, Zhou Heng-Wei, Huang Yi-Neng.Preparation and properties of spodumene/silicon carbide composite ceramic materials. Acta Physica Sinica, 2020, 69(11): 117701.doi:10.7498/aps.69.20200232 |
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Li Yuan-Yuan, Yu Yin, Meng Chuan-Min, Zhang Lu, Wang Tao, Li Yong-Qiang, He Hong-Liang, He Duan-Wei.Dynamic impact strength of diamond-SiC superhard composite. Acta Physica Sinica, 2019, 68(15): 158101.doi:10.7498/aps.68.20190350 |
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Shen Shuai-Shuai, He Chao-Hui, Li Yong-Hong.Non-ionization energy loss of proton in different regions in SiC. Acta Physica Sinica, 2018, 67(18): 182401.doi:10.7498/aps.67.20181095 |
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Fang Chao, Liu Ma-Lin.The study of the Raman spectra of SiC layers in TRISO particles. Acta Physica Sinica, 2012, 61(9): 097802.doi:10.7498/aps.61.097802 |
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Zhou Nai-Gen, Hong Tao, Zhou Lang.A comparative study between MEAM and Tersoff potentials on the characteristics of melting and solidification of carborundum. Acta Physica Sinica, 2012, 61(2): 028101.doi:10.7498/aps.61.028101 |
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Li Zhuo-Xin, Wang Dan-Ni, Wang Bao-Yi, Xue De-Sheng, Wei Long, Qin Xiu-Bo.Positron annihilation study of photoluminescence of porous silicon treated by water vapor annealing. Acta Physica Sinica, 2010, 59(12): 8915-8919.doi:10.7498/aps.59.8915 |
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Jin Hua, An Li-Nan, Bu Fan-Liang, Li Li-Hua, Wang Rong, Yang Wei-You, Zhang Li-Gong.Study of ultraviolet photoluminescence from SiC nanorods. Acta Physica Sinica, 2009, 58(4): 2594-2598.doi:10.7498/aps.58.2594 |
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Miao Jing-Wei, Wang Pei-Lu, Zhu Zhou-Sen, Yuan Xue-Dong, Wang Hu, Yang Chao-Wen, Shi Mian-Gong, Miao Lei, Sun Wei-Li, Zhang Jing, Liao Xue-Hua.Photoluminescence spectrum of monocrystalline Si implanted by nitrogen cluster ions. Acta Physica Sinica, 2008, 57(4): 2174-2178.doi:10.7498/aps.57.2174 |
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Yu Wei, Li Ya-Chao, Ding Wen-Ge, Zhang Jiang-Yong, Yang Yan-Bin, Fu Guang-Sheng.Bonding configurations and photoluminescence of amorphous Si nanoparticles in SiNx films. Acta Physica Sinica, 2008, 57(6): 3661-3665.doi:10.7498/aps.57.3661 |
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Lin Tao, Chen Zhi-Ming, Li Jia, Li Lian-Bi, Li Qing-Min, Pu Hong-Bin.Study of the growth characteristics of SiCGe layers grown on 6H-SiC substrates. Acta Physica Sinica, 2008, 57(9): 6007-6012.doi:10.7498/aps.57.6007 |
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Yao Zhi-Tao, Sun Xin-Rui, Xu Hai-Jun, Jiang Wei-Fen, Xiao Shun-Hua, Li Xin-Jian.The structure and photoluminescence properties of ZnO/silicon nanoporous pillar array. Acta Physica Sinica, 2007, 56(10): 6098-6103.doi:10.7498/aps.56.6098 |
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Qiu Xue-Jun, Zhang Yun-Peng, He Zheng-Hong, Bai Lang, Liu Guo-Lei, Wang Yue, Chen Peng, Xiong Zu-Hong.Control of coercivity of iron films deposited on porous silicon substrates. Acta Physica Sinica, 2006, 55(11): 6101-6107.doi:10.7498/aps.55.6101 |
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Liu Xiao-Bing, Shi Xiang-Hua, Liao Tai-Chang, Ren Peng, Liu Yue, Liu Yi, Xiong Zu-Hong, Ding Xun-Min, Hou Xiao-Yuan.The microstructure and characteristics of luminescent porous silicon film prepared by the physicochemical sonic-vacating method. Acta Physica Sinica, 2005, 54(1): 416-421.doi:10.7498/aps.54.416 |
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Li Huo-Quan, Ning Zhao-Yuan, Cheng Shan-Hua, Jiang Mei-Fu.Photoluminescence centers and shift of ZnO films deposited by rf magnetron sputtering. Acta Physica Sinica, 2004, 53(3): 867-870.doi:10.7498/aps.53.867 |
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Huang Kai, Wang Si-Hui, Shi Yi, Qin Guo-Yi, Zhang Rong, Zheng You-Dou.Effect of inner electric field on the photoluminescence spectrum of nanosilicon. Acta Physica Sinica, 2004, 53(4): 1236-1242.doi:10.7498/aps.53.1236 |
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Peng Ai-Hua, Xie Er-Qing, Jiang Ning, Zhang Zhi-Min, Li Peng, He De-Yan.The photoluminescence characterization of rare earths (Tb, Gd) embedded into por ous silicon. Acta Physica Sinica, 2003, 52(7): 1792-1796.doi:10.7498/aps.52.1792 |
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YUAN FANG-CHENG, RAN GUANG-ZHAO, CHAN YUAN, ZHANG BO-RUI, QIAO YONG-PING, FU JI-SHI, QIN GUO-GANG, MA ZHEN-CHANG, ZONG WAN-HUA.ROOM-TEMPERATURE 1.54μm Er3+ PHOTOLUMINESCENCE FROM Er-DOPED SILICON-RICH SILICON OXIDE FILM GROWN BY MAGNETRON SPUTTERING. Acta Physica Sinica, 2001, 50(12): 2487-2491.doi:10.7498/aps.50.2487 |
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MA SHU-YI, QIN GUO-GANG, YOU LI-PING, WANG YIN-YUE.COMPARATIVE STUDY ON PHOTOLUMINESCENCE FROM Si-CONTAINING SILICON OXIDE FILMS AND Ge-CONTAINING SILICON OXIDE FILMS. Acta Physica Sinica, 2001, 50(8): 1580-1584.doi:10.7498/aps.50.1580 |
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LIANG ER-JUN, CHAO MING-JU.LASER-INDUCED LATTICE DEFORMATION OF POROUS SILICON REVEALED BY RAMAN AND PHOTOLUMINESCENCE SPECTROSCOPIES. Acta Physica Sinica, 2001, 50(11): 2241-2246.doi:10.7498/aps.50.2241 |
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