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Ma Teng-Yu, Li Wan-Jun, He Xian-Wang, Hu Hui, Huang Li-Juan, Zhang Hong, Xiong Yuan-Qiang, Li Hong-Lin, Ye Li-Juan, Kong Chun-Yang.Size Regulation and Photoluminescence Properties ofβ-Ga2O3Nanomaterials. Acta Physica Sinica, 2020, 69(10): 108102.doi:10.7498/aps.69.20200158 |
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Liu Zi, Zhang Heng, Wu Hao, Liu Chang.Enhancement of photoluminescence from zinc oxide by aluminum nanoparticle surface plasmon. Acta Physica Sinica, 2019, 68(10): 107301.doi:10.7498/aps.68.20190062 |
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Huang Jing-Wen, Luo Li-Qiong, Jin Bo, Chu Shi-Jin, Peng Ru-Fang.Synthesis and photoluminescence property of hexangular star MoSe2 bilayer. Acta Physica Sinica, 2017, 66(13): 137801.doi:10.7498/aps.66.137801 |
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Wu Xue-Ke, Huang Wei-Qi, Dong Tai-Ge, Wang Gang, Liu Shi-Rong, Qin Chao-Jie.Effects of thermal annealing, laser and electron beam on the fabrication of nanosilicon and the emission properties of its localized states. Acta Physica Sinica, 2016, 65(10): 104202.doi:10.7498/aps.65.104202 |
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Fan Zhi-Dong, Zhou Zi-Chun, Liu Chuo, Ma Lei, Peng Ying-Cai.Photoluminescence properties of Eu doped Si nanowires. Acta Physica Sinica, 2015, 64(14): 148103.doi:10.7498/aps.64.148103 |
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Zhang Chao-Yu, Xiong Chuan-Bing, Tang Ying-Wen, Huang Bin-Bin, Huang Ji-Feng, Wang Guang-Xu, Liu Jun-Lin, Jiang Feng-Yi.Changes of micro zone luminescent properties and stress of GaN-based light emitting diode film grown on patterned silicon substrate, induced by the removal of the substrate and AlN buffer layer. Acta Physica Sinica, 2015, 64(18): 187801.doi:10.7498/aps.64.187801 |
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Wang Chang-Yuan, Yang Xiao-Hong, Ma Yong, Feng Yuan-Yuan, Xiong Jin-Long, Wang Wei.Microstructure and photoluminescence of ZnO：Cd nanorods synthesized by hydrothermal method. Acta Physica Sinica, 2014, 63(15): 157701.doi:10.7498/aps.63.157701 |
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Lin Zhen-Xu, Lin Ze-Wen, Zhang Yi, Song Chao, Guo Yan-Qing, Wang Xiang, Huang Xin-Tang, Huang Rui.Electroluminescence from Si nanostructure-based silicon nitride light-emitting devices. Acta Physica Sinica, 2014, 63(3): 037801.doi:10.7498/aps.63.037801 |
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Cheng Sai, Lü Hui-Min, Shi Zhen-Hai, Cui Jing-Ya.Growth and photoluminescence character research of aluminum nitride nanowires upon carbon foam substrate. Acta Physica Sinica, 2012, 61(12): 126201.doi:10.7498/aps.61.126201 |
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Fang He, Wang Shun-Li, Li Li-Qun, Li Pei-Gang, Liu Ai-Ping, Tang Wei-Hua.Synthesis and photoluminescence of ZnO and Zn/ZnOnanoparticles prepared by liquid-phase pulsed laser ablation. Acta Physica Sinica, 2011, 60(9): 096102.doi:10.7498/aps.60.096102 |
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Zheng Li-Ren, Huang Bai-Biao, Wei Ji-Yong.Preparation of SiOx nanowires in different atmosphere, their morphology, PL and FTIR properties. Acta Physica Sinica, 2009, 58(4): 2306-2312.doi:10.7498/aps.58.2306 |
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Miao Jing-Wei, Wang Pei-Lu, Zhu Zhou-Sen, Yuan Xue-Dong, Wang Hu, Yang Chao-Wen, Shi Mian-Gong, Miao Lei, Sun Wei-Li, Zhang Jing, Liao Xue-Hua.Photoluminescence spectrum of monocrystalline Si implanted by nitrogen cluster ions. Acta Physica Sinica, 2008, 57(4): 2174-2178.doi:10.7498/aps.57.2174 |
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Yu Wei, Li Ya-Chao, Ding Wen-Ge, Zhang Jiang-Yong, Yang Yan-Bin, Fu Guang-Sheng.Bonding configurations and photoluminescence of amorphous Si nanoparticles in SiNx films. Acta Physica Sinica, 2008, 57(6): 3661-3665.doi:10.7498/aps.57.3661 |
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Yao Zhi-Tao, Sun Xin-Rui, Xu Hai-Jun, Jiang Wei-Fen, Xiao Shun-Hua, Li Xin-Jian.The structure and photoluminescence properties of ZnO/silicon nanoporous pillar array. Acta Physica Sinica, 2007, 56(10): 6098-6103.doi:10.7498/aps.56.6098 |
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Tang Bin, Deng Hong, Shui Zheng-Wei, Wei Min, Chen Jin-Ju, Hao Xin.Room-temperature optical properties of Al-doped ZnO nanowires array. Acta Physica Sinica, 2007, 56(9): 5176-5179.doi:10.7498/aps.56.5176 |
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Wang Ying-Long, Lu Li-Fang, Yan Chang-Yu, Chu Li-Zhi, Zhou Yang, Fu Guang-Sheng, Peng Ying-Cai.The laser ablated deposition of Si nanocrystalline film with narrow photoluminescence peak. Acta Physica Sinica, 2005, 54(12): 5738-5742.doi:10.7498/aps.54.5738 |
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Xu Da-Yin, Liu Yan-Ping, He Zhi-Wei, Fang Ze-Bo, Liu Xue-Qin, Wang Yin-Yue.The behavior of photoluminescence from SiC:Tb films deposited on porous silicon substrate. Acta Physica Sinica, 2004, 53(8): 2694-2698.doi:10.7498/aps.53.2694 |
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Zhang Xi-Tian, Xiao Zhi-Yan, Zhang Wei-Li, Gao Hong, Wang Yu-Xi, Liu Yi-Chun, Zhang Ji-Ying, Xu Wu.A study on photoluminescence characterization of high-quality nanocrystalline ZnO thin films. Acta Physica Sinica, 2003, 52(3): 740-744.doi:10.7498/aps.52.740 |
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YUAN FANG-CHENG, RAN GUANG-ZHAO, CHAN YUAN, ZHANG BO-RUI, QIAO YONG-PING, FU JI-SHI, QIN GUO-GANG, MA ZHEN-CHANG, ZONG WAN-HUA.ROOM-TEMPERATURE 1.54μm Er3+ PHOTOLUMINESCENCE FROM Er-DOPED SILICON-RICH SILICON OXIDE FILM GROWN BY MAGNETRON SPUTTERING. Acta Physica Sinica, 2001, 50(12): 2487-2491.doi:10.7498/aps.50.2487 |
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MA SHU-YI, QIN GUO-GANG, YOU LI-PING, WANG YIN-YUE.COMPARATIVE STUDY ON PHOTOLUMINESCENCE FROM Si-CONTAINING SILICON OXIDE FILMS AND Ge-CONTAINING SILICON OXIDE FILMS. Acta Physica Sinica, 2001, 50(8): 1580-1584.doi:10.7498/aps.50.1580 |
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