| [1] |
Xiao You-Peng, Wang Huai-Ping, Feng Lin.Numerical simulation of germanium selenide heterojunction solar cell. Acta Physica Sinica, 2023, 72(24): 248801.doi:10.7498/aps.72.20231220 |
| [2] |
Xie Tian-Ci, Zhang Bin, He Bo, Li Hao-Peng, Qin Zhuang, Qian Jin-Qian, Shi Qie-Ming, Lewis Elfed, Sun Wei-Min.Mathematical algorithm model of absolute dose in radiotherapy. Acta Physica Sinica, 2021, 70(1): 018701.doi:10.7498/aps.70.20200986 |
| [3] |
Song Yan, Jiang Hong-Xiang, Zhao Jiu-Zhou, He Jie, Zhang Li-Li, Li Shi-Xin.Numerical simulations of solidification microstructure evolution process for commercial-purity aluminum alloys inoculated by Al-Ti-B refiner. Acta Physica Sinica, 2021, 70(8): 086402.doi:10.7498/aps.70.20201431 |
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Liu Jia-Wen, Yao Ruo-He, Liu Yu-Rong, Geng Kui-Wei.A physical model of cylindrical surrounding double-gate metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2021, 70(15): 157302.doi:10.7498/aps.70.20202156 |
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Liu Nai-Zhang, Yao Ruo-He, Geng Kui-Wei.Gate capacitance model of AlGaN/GaN high electron mobility transistor. Acta Physica Sinica, 2021, 70(21): 217301.doi:10.7498/aps.70.20210700 |
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Li Ping, Xu Yu-Tang.Monte Carlo simulation of time-dependent dielectric breakdown of oxide caused by migration of oxygen vacancies. Acta Physica Sinica, 2017, 66(21): 217701.doi:10.7498/aps.66.217701 |
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Han Yan-Long, Jia Fu-Guo, Zeng Yong, Wang Ai-Fang.Granular axial flow characteristics in a grinding area studied by discrete element method. Acta Physica Sinica, 2015, 64(23): 234502.doi:10.7498/aps.64.234502 |
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Ma Ji-Gang, Ma Xiao-Hua, Zhang Hui-Long, Cao Meng-Yi, Zhang Kai, Li Wen-Wen, Guo Xing, Liao Xue-Yang, Chen Wei-Wei, Hao Yue.A semiempirical model for kink effect on the AlGaN/GaN high electron mobility transistor. Acta Physica Sinica, 2012, 61(4): 047301.doi:10.7498/aps.61.047301 |
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Wu Hua-Ying, Zhang He-Ming, Song Jian-Jun, Hu Hui-Yong.An model of tunneling gate current for uniaxially strained Si nMOSFET. Acta Physica Sinica, 2011, 60(9): 097302.doi:10.7498/aps.60.097302 |
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Li Bin, Liu Hong-Xia, Yuan Bo, Li Jin, Lu Feng-Ming.Model of electron mobility in inversion layer of strained Si/Si1-xGex n type metal-oxide-semiconductor field-effect transistors. Acta Physica Sinica, 2011, 60(1): 017202.doi:10.7498/aps.60.017202 |
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Liu Yao-Min, Liu Zhong-Liang, Huang Ling-Yan.Simulation of frost formation process on cold plate based on fractal theory combined with phase change dynamics. Acta Physica Sinica, 2010, 59(11): 7991-7997.doi:10.7498/aps.59.7991 |
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Li Qi, Zhang Bo, Li Zhao-Ji.A new analytical model of breakdown voltage for the SD LDMOS. Acta Physica Sinica, 2008, 57(3): 1891-1896.doi:10.7498/aps.57.1891 |
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Feng Wei, Gao Zhong-Kuo.Simulation of physical properties of organic photovoltaic cell. Acta Physica Sinica, 2008, 57(4): 2567-2573.doi:10.7498/aps.57.2567 |
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Peng Guang-Han, Sun Di-Hua, He Heng-Pan.Two-car following model of traffic flow and numerical simulation. Acta Physica Sinica, 2008, 57(12): 7541-7546.doi:10.7498/aps.57.7541 |
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Hao Yue, Han Xin-Wei, Zhang Jin-Cheng, Zhang Jin-Feng.Current slump mechanism and its physical model of AlGaN/GaN HEMTs under DC bias. Acta Physica Sinica, 2006, 55(7): 3622-3628.doi:10.7498/aps.55.3622 |
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Lai Guo-Jun, Liu Pu-Kun.Simulation and design of a W-band gyrotron traveling wave amplifier. Acta Physica Sinica, 2006, 55(1): 321-325.doi:10.7498/aps.55.321 |
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Lu Yang, Wang Fan, Zhu Chang-Sheng, Wang Zhi-Ping.Simulation of multiple grains for isothermal solidification of binary alloy using phase-field model. Acta Physica Sinica, 2006, 55(2): 780-785.doi:10.7498/aps.55.780 |
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Shen Zi-Cai, Wang Ying-Jian, Fan Zheng-Xiu, Shao Jian-Da.Modeling analysis of inhomogeneous coatings prepared by double-source co-evaporation. Acta Physica Sinica, 2005, 54(1): 295-301.doi:10.7498/aps.54.295 |
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Ma Zhong-Fa, Zhuang Yi-Qi, Du Lei, Bao Jun-Lin, Li Wei-Hua.A physical-based percolation model for gate oxide TDDB. Acta Physica Sinica, 2003, 52(8): 2046-2051.doi:10.7498/aps.52.2046 |
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Lü Hong-Liang, Zhang Yi-Men, Zhang Yu-Ming.The simulation study of the tunneling effect in the breakdown of 4H-SiC pn junc tion diode. Acta Physica Sinica, 2003, 52(10): 2541-2546.doi:10.7498/aps.52.2541 |
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