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Xie Tian-Ci, Zhang Bin, He Bo, Li Hao-Peng, Qin Zhuang, Qian Jin-Qian, Shi Qie-Ming, Lewis Elfed, Sun Wei-Min.Mathematical algorithm model of absolute dose in radiotherapy. Acta Physica Sinica, 2021, 70(1): 018701.doi:10.7498/aps.70.20200986 |
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Yang Liang, Wei Cheng-Yang, Lei Li-Ming, Li Zhen-Xi, Li Sai-Yi.Monte Carlo simulations of microstructure and texture evolution during annealing of a two-phase titanium alloy. Acta Physica Sinica, 2013, 62(18): 186103.doi:10.7498/aps.62.186103 |
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Shi Gao-Ming, Zou Zhi-Qiang, Sun Li-Min, Li Wei-Cong, Liu Xiao-Yong.Scanning tunneling mircroscopy and X-ray photoelectron spectroscopy studies of MnSi film and MnSi1.7 nanowires grown on Si substrates. Acta Physica Sinica, 2012, 61(22): 227301.doi:10.7498/aps.61.227301 |
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Wu Hua-Ying, Zhang He-Ming, Song Jian-Jun, Hu Hui-Yong.An model of tunneling gate current for uniaxially strained Si nMOSFET. Acta Physica Sinica, 2011, 60(9): 097302.doi:10.7498/aps.60.097302 |
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Tang Zheng-Xia, Shen Hong-Lie, Jiang Feng, Fang Ru, Lu Lin-Feng, Huang Hai-Bin, Cai Hong.Mechanism of large grain polycrystalline Si preparation by aluminum induced crystallization with temperature gradient profile. Acta Physica Sinica, 2010, 59(12): 8770-8775.doi:10.7498/aps.59.8770 |
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Zhang Fei-Peng, Lu Qing-Mei, Zhang Jiu-Xing, Zhang Xin.Texture and electrical transport properties of Ba and Ag double substituted BaxAgyCa3-x-yCo4O9 oxide. Acta Physica Sinica, 2009, 58(4): 2697-2701.doi:10.7498/aps.58.2697 |
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Li Qi, Zhang Bo, Li Zhao-Ji.A new analytical model of breakdown voltage for the SD LDMOS. Acta Physica Sinica, 2008, 57(3): 1891-1896.doi:10.7498/aps.57.1891 |
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Zhang He-Ming, Cui Xiao-Ying, Hu Hui-Yong, Dai Xian-Ying, Xuan Rong-Xi.Study on threshold voltage model of strained SiGe quantum well channel SOI PMOSFET. Acta Physica Sinica, 2007, 56(6): 3504-3508.doi:10.7498/aps.56.3504 |
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Yang Ji-Jun, Xu Ke-Wei.Surface dynamic evolution of Ta film growth in the initial stage. Acta Physica Sinica, 2007, 56(10): 6023-6027.doi:10.7498/aps.56.6023 |
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Yang Bai, Shen Bao-Gen, Zhao Tong-Yun, Sun Ji-Rong.Texture and magnetic properties of nanocomposite Pr2Fe14B/α-Fe melt-spun ribbons. Acta Physica Sinica, 2007, 56(6): 3527-3532.doi:10.7498/aps.56.3527 |
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Hao Yue, Han Xin-Wei, Zhang Jin-Cheng, Zhang Jin-Feng.Current slump mechanism and its physical model of AlGaN/GaN HEMTs under DC bias. Acta Physica Sinica, 2006, 55(7): 3622-3628.doi:10.7498/aps.55.3622 |
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Zhou Nai-Gen, Zhou Lang, Du Dan-Xu.Structure and formation of misfit dislocations in an epitaxial fcc film. Acta Physica Sinica, 2006, 55(1): 372-377.doi:10.7498/aps.55.372 |
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Shen Zi-Cai, Shao Jian-Da, Wang Ying-Jian, Fan Zheng-Xiu.Modeling analysis of gradient-index coatings prepared by reactive magnetron sputtering. Acta Physica Sinica, 2005, 54(10): 4842-4845.doi:10.7498/aps.54.4842 |
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Ma Zhong-Fa, Zhuang Yi-Qi, Du Lei, Bao Jun-Lin, Li Wei-Hua.A physical-based percolation model for gate oxide TDDB. Acta Physica Sinica, 2003, 52(8): 2046-2051.doi:10.7498/aps.52.2046 |
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Zhang Jian-Min, Xu Ke-Wei.Investigation of abnormal grain growth andtexture change in Ag and Cu films. Acta Physica Sinica, 2003, 52(1): 145-149.doi:10.7498/aps.52.145 |
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Wang Pei-Lin, Ding Tian-Hua, Cai Xun.. Acta Physica Sinica, 2002, 51(9): 2109-2112.doi:10.7498/aps.51.2109 |
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Zhang Jian-Min, Xu Ke-Wei.. Acta Physica Sinica, 2002, 51(11): 2562-2566.doi:10.7498/aps.51.2562 |
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Li Ming-Hua, Yu Guang-Hua, He Ge, Zhu Feng-Wu, Lai Wu-Yan.. Acta Physica Sinica, 2002, 51(12): 2854-2857.doi:10.7498/aps.51.2854 |
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WU FENG-MIN, SHI JIAN-QING, WU ZI-QIN.SIMULATION OF THE INITIAL GROWTH OF METAL THIN FILMS AT HIGH TEMPERATURE. Acta Physica Sinica, 2001, 50(8): 1555-1559.doi:10.7498/aps.50.1555 |
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LI CAN-HUA, LIAO YUAN, CHANG CHAO, WANG GUAN-ZHONG, FANG RONG-CHUAN.THE NUCLEATION AND GROWTH OF (100) TEXTURED DIAMOND FILMS IN PRESENCE OF NITROG EN. Acta Physica Sinica, 2000, 49(9): 1756-1763.doi:10.7498/aps.49.1756 |
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