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Liang Qi, Wang Ru-Zhi, Yang Meng-Qi, Wang Chang-Hao, Liu Jin-Wei.Preparing GaN nanowires on Al2O3substrate without catalyst and its optical property. Acta Physica Sinica, 2020, 69(8): 087801.doi:10.7498/aps.69.20191923 |
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Shang Xiang-Jun, Ma Ben, Chen Ze-Sheng, Yu Ying, Zha Guo-Wei, Ni Hai-Qiao, Niu Zhi-Chuan.Physics and devices of quanutm light emission from semicoductor self-assembled quantum Dots. Acta Physica Sinica, 2018, 67(22): 227801.doi:10.7498/aps.67.20180594 |
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Yang Yun-Chang, Wu Bin, Liu Yun-Qi.Synthesis of bilayer graphene via chemical vapor deposition and its optoelectronic devices. Acta Physica Sinica, 2017, 66(21): 218101.doi:10.7498/aps.66.218101 |
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Li Hao, Fu Zhi-Bing, Wang Hong-Bin, Yi Yong, Huang Wei, Zhang Ji-Cheng.Preperetions of bi-layer and multi-layer graphene on copper substrates by atmospheric pressure chemical vapor deposition and their mechanisms. Acta Physica Sinica, 2017, 66(5): 058101.doi:10.7498/aps.66.058101 |
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He Qiong, Xu Xiang-Dong, Wen Yue-Jiang, Jiang Ya-Dong, Ao Tian-Hong, Fan Tai-Jun, Huang Long, Ma Chun-Qian, Sun Zi-Qiang.Growth mechanism and optoelectronic properties of vanadium oxide films prepared by Sol-Gel. Acta Physica Sinica, 2013, 62(5): 056802.doi:10.7498/aps.62.056802 |
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Cheng Ping, Zhang Yu-Ming, Guo Hui, Zhang Yi-Men, Liao Yu-Long.ESR characteristics of high-quality semi-insulating 4H-SiC crystal prepared by LPCVD. Acta Physica Sinica, 2009, 58(6): 4214-4218.doi:10.7498/aps.58.4214 |
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Jia Xi, Liu Ai-Ping, Liu Yang-Yi, Tang Wei-Hua, Wang Jun-Wei.Synthesis and growth mechanism study of SnO2 micro/nanomaterials. Acta Physica Sinica, 2009, 58(4): 2572-2577.doi:10.7498/aps.58.2572 |
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Huang Li-Qing, Pan Hua-Qiang, Wang Jun, Tong Hui-Min, Zhu Ke, Ren Guan-Xu, Wang Yong-Chang.Spontaneous formation of ordered Sn nanodot array on porous anodic alumina membrane. Acta Physica Sinica, 2007, 56(11): 6712-6716.doi:10.7498/aps.56.6712 |
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Niu Zhi-Qiang, Fang Yan.The effect of composition of the catalysts on the preparation of single-walled carbon nanotubes. Acta Physica Sinica, 2007, 56(3): 1796-1801.doi:10.7498/aps.56.1796 |
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Zhang Yong-Ju, Yu Sen-Jiang, Ge Hong-Liang, Wu Liang-Neng, Cui Yu-Jian.Growth mechanism and ordered structures of iron films sputter-deposited on silicone oil surfaces. Acta Physica Sinica, 2006, 55(10): 5444-5450.doi:10.7498/aps.55.5444 |
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Gu Wei-Chao, Shen De-Jiu, Wang Yu-Lin, Chen Guang-Liang, Feng Wen-Ran, Zhang Gu-Ling, Liu Chi-Zi, Yang Si-Ze.Preparation of Al2O3 ceramic coating by electrolytic plasma processing and its properties. Acta Physica Sinica, 2005, 54(7): 3263-3267.doi:10.7498/aps.54.3263 |
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Ding Pei, Liang Er-Jun, Zhang Hong-Rui, Liu Yi-Zhen, Liu Hui, Guo Xin-Yong, Du Zu-Liang.Growth mechanism and Raman spectroscopic study of “interlinked-cone" shaped CNx nanotubes. Acta Physica Sinica, 2003, 52(1): 237-241.doi:10.7498/aps.52.237 |
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Zhang Yong-Peng, Yan Long, Xie Si-Shen, Pang Shi-Jin, Gao Hong-Jun.. Acta Physica Sinica, 2002, 51(2): 296-299.doi:10.7498/aps.51.296 |
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Wang Yin-Shu, Sun Ping, Ding Shuo, Luo Xu-Hui, Li Na, Wang Ruo-Zhen.. Acta Physica Sinica, 2002, 51(12): 2892-2895.doi:10.7498/aps.51.2892 |
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HU YING.SiC NANOWIRES GROWN ON SILICON(100) WAFER BY MPCVD METHOD. Acta Physica Sinica, 2001, 50(12): 2452-2455.doi:10.7498/aps.50.2452 |
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LV ZHEN-DONG, LI QING, XU JI-ZONG, ZHENG BAO-ZHEN, XU ZHONG-YING, GE WEI-KUN.EXCITON DYNAMICS IN SELF-ORGANIZED InAs/GaAs QUANTUM DOTS. Acta Physica Sinica, 1999, 48(4): 744-750.doi:10.7498/aps.48.744 |
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SI JUN-JIE, YANG QIN-QING, TENG DA, WANG HONG-JIE, YU JIN-ZHONG, WANG QI-MING, GUO LI-WEI, ZHOU JUN-MING.MORPHOLOGY AND PHOTOLUMINESCENCE OF GeSi SELF-ASSEMBLED QUANTUM DOT ON Si(113). Acta Physica Sinica, 1999, 48(9): 1745-1750.doi:10.7498/aps.48.1745 |
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WANG ZHI-MING, FENG SONG-LIN, Lv ZHEN-DONG, YANG XIAO-PING, CHEN ZONG-GUI, SONG CHUN-YING, XU ZHONG-YING, ZHENG HOU-ZHI, WANG FENG-LIAN, HAN PAI-DE, DUAN XIAO-FENG.STUDY OF VERTICALLY ALIGNING GROWTH OF SELF-ASSEMBLED InAs/GaAs QUANTUM DOTS. Acta Physica Sinica, 1998, 47(1): 89-93.doi:10.7498/aps.47.89 |
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ZHANG PEI-XIAN, YAO JIE, PENG SHAO-QI.THE COMPENSATION OF DEFECTS AND DOPING IN LPCVD a-Si FILMS. Acta Physica Sinica, 1987, 36(12): 1538-1544.doi:10.7498/aps.36.1538 |
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