[1] |
Liang Ai-Hua, Wang Xu-Sheng, Li Guo-Rong, Zheng Liao-Ying, Jiang Xiang-Ping, Hu Rui.Properties of Photoluminescence and mechanoluminescence of KxNa1–xNbO3:Pr3+ferroelectric. Acta Physica Sinica, 2022, 71(16): 167801.doi:10.7498/aps.71.20220501 |
[2] |
Huang Bin-Bin, Xiong Chuan-Bing, Tang Ying-Wen, Zhang Chao-Yu, Huang Ji-Feng, Wang Guang-Xu, Liu Jun-Lin, Jiang Feng-Yi.Changes of stress and luminescence properties in GaN-based LED films before and after transferring the films to a flexible layer on a submount from the silicon epitaxial substrate. Acta Physica Sinica, 2015, 64(17): 177804.doi:10.7498/aps.64.177804 |
[3] |
Zhang Chao-Yu, Xiong Chuan-Bing, Tang Ying-Wen, Huang Bin-Bin, Huang Ji-Feng, Wang Guang-Xu, Liu Jun-Lin, Jiang Feng-Yi.Changes of micro zone luminescent properties and stress of GaN-based light emitting diode film grown on patterned silicon substrate, induced by the removal of the substrate and AlN buffer layer. Acta Physica Sinica, 2015, 64(18): 187801.doi:10.7498/aps.64.187801 |
[4] |
Guo Zi-Zheng, Deng Hai-Dong, Huang Jia-Sheng, Xiong Wan-Jie, Xu Chu-Dong.Spin-torque critical current tuned by stress. Acta Physica Sinica, 2014, 63(13): 138501.doi:10.7498/aps.63.138501 |
[5] |
Yang Fa-Zhan, Shen Li-Ru, Wang Shi-Qing, Tang De-Li, Jin Fa-Ya, Liu Hai-Feng.UV Raman and XPS studies of hydrogenous diamond-like carbon films prepared by PECVD. Acta Physica Sinica, 2013, 62(1): 017802.doi:10.7498/aps.62.017802 |
[6] |
Liu Ming, Cao Shi-Xun, Yuan Shu-Juan, Kang Bao-Juan, Lu Bo, Zhang Jin-Cang.The study of Raman spectrum, distortion of lattice and spin reorientation phase transition on Pr doped DyFeO3 system. Acta Physica Sinica, 2013, 62(14): 147601.doi:10.7498/aps.62.147601 |
[7] |
Liu Tian-Yuan, Sun Cheng-Lin, Li Zuo-Wei, Zhou Mi.Raman spectroscopy study on the C/H interaction between benzene and chloroform. Acta Physica Sinica, 2012, 61(10): 107801.doi:10.7498/aps.61.107801 |
[8] |
Fang Chao, Liu Ma-Lin.The study of the Raman spectra of SiC layers in TRISO particles. Acta Physica Sinica, 2012, 61(9): 097802.doi:10.7498/aps.61.097802 |
[9] |
Gao Li, Zhang Jian-Min.Photoluminescence of diluted Mg doped ZnO thin films and band-gap change mechanisms. Acta Physica Sinica, 2010, 59(2): 1263-1267.doi:10.7498/aps.59.1263 |
[10] |
Gu Wen-Ping, Hao Yue, Zhang Jin-Cheng, Wang Chong, Feng Qian, Ma Xiao-Hua.Degradation under high-field stress and gate stress of AlGaN/GaN HEMTs. Acta Physica Sinica, 2009, 58(1): 511-517.doi:10.7498/aps.58.511 |
[11] |
Miao Jing-Wei, Wang Pei-Lu, Zhu Zhou-Sen, Yuan Xue-Dong, Wang Hu, Yang Chao-Wen, Shi Mian-Gong, Miao Lei, Sun Wei-Li, Zhang Jing, Liao Xue-Hua.Photoluminescence spectrum of monocrystalline Si implanted by nitrogen cluster ions. Acta Physica Sinica, 2008, 57(4): 2174-2178.doi:10.7498/aps.57.2174 |
[12] |
Xiong Chuan-Bing, Jiang Feng-Yi, Fang Wen-Qing, Wang Li, Mo Chun-Lan.Change in stress of GaN light-emitting diode films during the process of transferring the film from the Si(111) growth substrate to new substrate. Acta Physica Sinica, 2008, 57(5): 3176-3181.doi:10.7498/aps.57.3176 |
[13] |
Wang Rui-Min, Chen Guang-De, Zhu You-Zhang.Micro-Raman scattering study of hexagonal InGaN epitaxial layer. Acta Physica Sinica, 2006, 55(2): 914-919.doi:10.7498/aps.55.914 |
[14] |
Wang Ying-Long, Lu Li-Fang, Yan Chang-Yu, Chu Li-Zhi, Zhou Yang, Fu Guang-Sheng, Peng Ying-Cai.The laser ablated deposition of Si nanocrystalline film with narrow photoluminescence peak. Acta Physica Sinica, 2005, 54(12): 5738-5742.doi:10.7498/aps.54.5738 |
[15] |
Huang Kai, Wang Si-Hui, Shi Yi, Qin Guo-Yi, Zhang Rong, Zheng You-Dou.Effect of inner electric field on the photoluminescence spectrum of nanosilicon. Acta Physica Sinica, 2004, 53(4): 1236-1242.doi:10.7498/aps.53.1236 |
[16] |
Cai Wei-Ying, Li Zhi-Feng, Lu Wei, Li Shou-Rong, Liang Ping-Zhi.Heat conduction investigations of the Si bridge in infrared emitter using micro- Raman scattering. Acta Physica Sinica, 2003, 52(11): 2923-2928.doi:10.7498/aps.52.2923 |
[17] |
Shao Jun.Optimal photoluminescence spectrum from Ti-doped ZnTe. Acta Physica Sinica, 2003, 52(7): 1743-1747.doi:10.7498/aps.52.1743 |
[18] |
.. Acta Physica Sinica, 2002, 51(2): 444-448.doi:10.7498/aps.51.444 |
[19] |
.. Acta Physica Sinica, 2002, 51(2): 424-429.doi:10.7498/aps.51.424 |
[20] |
LIANG ER-JUN, CHAO MING-JU.LASER-INDUCED LATTICE DEFORMATION OF POROUS SILICON REVEALED BY RAMAN AND PHOTOLUMINESCENCE SPECTROSCOPIES. Acta Physica Sinica, 2001, 50(11): 2241-2246.doi:10.7498/aps.50.2241 |