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Geng Xin, Zhang Jie-Yin, Lu Wen-Long, Ming Ming, Liu Fang-Ze, Fu Bin-Xiao, Chu Yi-Xin, Yan Mou-Hui, Wang Bao-Chuan, Zhang Xin-Ding, Guo Guo-Ping, Zhang Jian-Jun.Epitaxy and characterization of undoped Si/SiGe heterojunctions. Acta Physica Sinica, 2024, 73(11): 117302.doi:10.7498/aps.73.20240310 |
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Shi Kai-Ju, Li Rui, Li Chang-Fu, Wang Cheng-Xin, Xu Xian-Gang, Ji Zi-Wu.Luminescence measurement of band gap. Acta Physica Sinica, 2022, 71(6): 067803.doi:10.7498/aps.71.20211894 |
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Feng Song, Xue Bin, Li Lian-Bi, Zhai Xue-Jun, Song Li-Xun, Zhu Chang-Jun.Analysis of Si/SiGe/Si double heterojunction band of a novelstructure of PIN electronic modulation. Acta Physica Sinica, 2016, 65(5): 054201.doi:10.7498/aps.65.054201 |
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Liu Chao, Wei Zhi-Peng, An Ning, He Bin-Tai, Liu Peng-Cheng, Liu Guo-Jun.Calculation methods of InGaAsSb quaternary alloy band gap. Acta Physica Sinica, 2014, 63(24): 248102.doi:10.7498/aps.63.248102 |
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Wang Bin, Zhang He-Ming, Hu Hui-Yong, Zhang Yu-Ming, Song Jian-Jun, Zhou Chun-Yu, Li Yu-Chen.Study on physical model for strained Si MOSFET with hetero-polycrystalline SiGe gate. Acta Physica Sinica, 2013, 62(21): 218502.doi:10.7498/aps.62.218502 |
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Ding Wen-Ge, Sang Yun-Gang, Yu Wei, Yang Yan-Bin, Teng Xiao-Yun, Fu Guang-Sheng.Current transport mechanism in silicon-rich silicon nitride/c-Si heterojunction. Acta Physica Sinica, 2012, 61(24): 247304.doi:10.7498/aps.61.247304 |
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Pu Chun-Ying, Li Hong-Jing, Tang Xin, Zhang Qing-Yu.Optical properties of N-doped Cu2O films and relevant analysis with first-principles calculations. Acta Physica Sinica, 2012, 61(4): 047104.doi:10.7498/aps.61.047104 |
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Wu Li-Hua, Zhang Xiao-Zhong, Yu Yi, Wan Cai-Hua, Tan Xin-Yu.Photovoltaic effect of a-C: Fe/AlOx /Si based heterostructures. Acta Physica Sinica, 2011, 60(3): 037807.doi:10.7498/aps.60.037807 |
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Hu Hui-Yong, Shu Yu, Zhang He-Ming, Song Jian-Jun, Xuan Rong-Xi, Qing Shan-Shan, Qu Jiang-Tao.Collector junction depletion-layer width model of SiGeheterojunction bipolar transistor with intrinsic SiGe layer. Acta Physica Sinica, 2011, 60(1): 017303.doi:10.7498/aps.60.017303 |
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Miao Rui-Xia, Zhang Yu-Ming, Tang Xiao-Yan, Zhang Yi-Men.Investigation of luminescence properties of basal plane dislocations in 4H-SiC. Acta Physica Sinica, 2011, 60(3): 037808.doi:10.7498/aps.60.037808 |
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Zhong Chun-Liang, Geng Kui-Wei, Yao Ruo-He.S-shaped J-V characteristic of a-Si:H/c-Si heterojunction solar cell. Acta Physica Sinica, 2010, 59(9): 6538-6544.doi:10.7498/aps.59.6538 |
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Zhao Lei, Zhou Chun-Lan, Li Hai-Ling, Diao Hong-Wei, Wang Wen-Jing.Optimizing polymorphous silicon back surface field of a-Si(n)/c-Si(p) heterojunction solar cells by simulation. Acta Physica Sinica, 2008, 57(5): 3212-3218.doi:10.7498/aps.57.3212 |
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Zhou Jun, Fang Qing-Qing, Wang Bao-Ming, Liu Yan-Mei, Li Mao, Yan Fang-Liang, Wang Sheng-Nan.Effect of annealing and Mg content on the microstructure and optical properties of Zn1-xMgxO films. Acta Physica Sinica, 2008, 57(10): 6614-6619.doi:10.7498/aps.57.6614 |
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Shu Bin, Zhang He-Ming, Hu Hui-Yong, Xuan Rong-Xi, Dai Xian-Ying.Mathematical model of DC characteristic of SiGe charge injection transistors. Acta Physica Sinica, 2007, 56(2): 1105-1109.doi:10.7498/aps.56.1105 |
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Li Hui, Xie Er-Qing, Zhang Hong-Liang, Pan Xiao-Jun, Zhang Yong-Zhe.Optical properties of ZnO and MgxZn1－xO nanoparticles prepared by flame spray synthesis. Acta Physica Sinica, 2007, 56(6): 3584-3588.doi:10.7498/aps.56.3584 |
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Jin Xi-Lian, Lou Shi-Yun, Kong De-Guo, Li Yun-Cai, Du Zu-Liang.Investigation on the broadening of band gap of wurtzite ZnO by Mg-doping. Acta Physica Sinica, 2006, 55(9): 4809-4815.doi:10.7498/aps.55.4809 |
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Hu Zhi-Hua, Liao Xian-Bo, Zeng Xiang-Bo, Xu Yan-Yue, Zhang Shi-Bin, Diao Hong-Wei, Kong Guang-Lin.Numerical simulation of nc-Si:H/ c-Si heterojunction solar cells. Acta Physica Sinica, 2003, 52(1): 217-224.doi:10.7498/aps.52.217 |
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WANG SHAO-WEI, LU WEI, WANG HONG, WANG DONG, WANG MIN, SHEN XUE-CHU.C-V CHARACTERISTICS OF Bi2Ti2O7 THIN FILMS ON n-Si(100). Acta Physica Sinica, 2001, 50(12): 2461-2465.doi:10.7498/aps.50.2461 |
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PENG YING-CAI, XU GANG-YI, HE YU-LIANG, LIU MING, LI YUE-XIA.CARRIER TRANSPORT PROPERTIES OF THE (n)nc-Si:H/(p)c-Si HETEROJUNCTION. Acta Physica Sinica, 2000, 49(12): 2466-2471.doi:10.7498/aps.49.2466 |
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PENG CHENG, SHENG CHI, SUN HENG-HUI.NEW C-V CHARACTERISTIC OF Si pn DIODES PREPARED BY MOLECULAR BEAM EPITAXY. Acta Physica Sinica, 1988, 37(6): 1025-1029.doi:10.7498/aps.37.1025 |
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