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Hu Yi-Bin, Hao Zhi-Biao, Hu Jian-Nan, Niu Lang, Wang Lai, Luo Yi.Studies on the composition of InGaN/AlN quantum dots grown by molecular beam epitaxy. Acta Physica Sinica, 2012, 61(23): 237804.doi:10.7498/aps.61.237804 |
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Zhang Bing-Po, Cai Chun-Feng, Cai Xi-Kun, Wu Hui-Zhen, Wang Miao.Study of growth of [111]-oriented CdTe thin films by MBE. Acta Physica Sinica, 2012, 61(4): 046802.doi:10.7498/aps.61.046802 |
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Zhao Ming-Hai, Sun Jing-Jing, Wang Dan, Zou Zhi-Qiang, Liang Qi.STM studies of the epitaxial growth of C60 molecules on Si(111)-7×7 surface. Acta Physica Sinica, 2010, 59(1): 636-642.doi:10.7498/aps.59.636 |
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Gao Jin-Xia, Zhang Yi-Men, Tang Xiao-Yan, Zhang Yu-Ming.Extraction of channel carrier concentration using C-V method for SiC buried-channel MOSFET. Acta Physica Sinica, 2006, 55(6): 2992-2996.doi:10.7498/aps.55.2992 |
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Yang Xue-Wen, Zheng Jia-Gui, Zhang Jing-Quan, Feng Liang-Huan, Cai Wei, Cai Ya-Ping, Li Wei, Li Bing, Lei Zhi, Wu Li-Li.Characteristics of CdTe solar cell device. Acta Physica Sinica, 2006, 55(5): 2504-2507.doi:10.7498/aps.55.2504 |
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Wang Qing-Xue, Yang Jian-Rong, Sun Tao, Wei Yan-Feng, Fang Wei-Zheng, He Li.Relationship between lattice parameters and compositions of molecular beam epitaxial Hg1－xCdxTe films. Acta Physica Sinica, 2005, 54(8): 3726-3733.doi:10.7498/aps.54.3726 |
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Tang Xiao-Yan, Zhang Yi-Men, Zhang He-Ming, Zhang Yu-Ming, Dai Xian-Ying, Hu Hui-Yong.3UCVD deposition SiO2 on SiC wafer and its C-V measurement. Acta Physica Sinica, 2004, 53(9): 3225-3228.doi:10.7498/aps.53.3225 |
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WANG SHAO-WEI, LU WEI, WANG HONG, WANG DONG, WANG MIN, SHEN XUE-CHU.C-V CHARACTERISTICS OF Bi2Ti2O7 THIN FILMS ON n-Si(100). Acta Physica Sinica, 2001, 50(12): 2461-2465.doi:10.7498/aps.50.2461 |
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NIU ZHI-CHUAN, ZHOU ZENG-QI, WU RONG-HAN, FENG SONG-LIN, R.NOETZEL, U.JAHN, K.H.PLOOG.FORMATION OF GaAs UNIFORM DOT STRUCTURES GROWN BY MBE ON PATTERNED SUBSTRATES. Acta Physica Sinica, 1998, 47(8): 1346-1353.doi:10.7498/aps.47.1346 |
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YI XIN-JIAN, LI YI, HAO JIAN-HUA, ZHANG XIN-YU, G.K.WONG.THIN FILMS OF Sb GROWN BY MOLECULAR BEAM EPITAXY AND THE QUANTUM SIZE EFFECT. Acta Physica Sinica, 1998, 47(11): 1896-1899.doi:10.7498/aps.47.1896 |
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LU LI-WU, ZHANG YAN-HUA, YANG GUO-WEN, WANG ZHAN-GUO, J.WANG, Y.WANG, WEIKUN GE.CONDUCTION-BAND OFFSET IN PSEUDOMORPHIC GaAs/In0.2Ga0.8As QUANTUM WELL DETERMINED BY C-V PROFILING AND DLTS TECHNIQUES. Acta Physica Sinica, 1998, 47(8): 1339-1345.doi:10.7498/aps.47.1339 |
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Xu Qiang, Wang Jian-Bao, Yuan Jian, Lu Fang, Sun Heng-Hui.. Acta Physica Sinica, 1995, 44(3): 432-438.doi:10.7498/aps.44.432 |
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MAO HUI-BING, LU WEI, MA ZHAO-HUI, LIU XING-QUAN, SHEN XUE-CHU.MONTE CARLO SIMULATION OF MBE GROWTH ON GaAs VICINAL SURFACE. Acta Physica Sinica, 1994, 43(7): 1118-1122.doi:10.7498/aps.43.1118 |
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LU FANG, GONG DA-WEI, SUN HENG-HUI.A STUDY OF THE INTERFACIAL DEFECTS IN MOLECULAR BEAM EPITAXIAL SILICON. Acta Physica Sinica, 1994, 43(7): 1129-1136.doi:10.7498/aps.43.1129 |
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HU FU-YI, LI AI-ZHEN.RAMAN SCATTERING STUDIES OF MBE-GROWN GaAs/Si. Acta Physica Sinica, 1991, 40(6): 962-968.doi:10.7498/aps.40.962 |
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ZHOU JIE, LU LI-WU, HAN ZHI-YONG, LIANG JI-BEN.A STUDY OF ELECTRONIC CHARACTERIZATION IN MOLECULAR BEAM EPITAXIALLY GROWN GaAs ON Si. Acta Physica Sinica, 1991, 40(11): 1827-1832.doi:10.7498/aps.40.1827 |
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ZONG XIANG-FU, QIU SHAO-XIONG, YANG HENG-QING, HUANG CHANG-HE, CHEN JUN-YI, HU GANG, WU ZHONG-CHI.THE GROWTH OF GaSb/AlSb/GaAs STRAINED LAYER HETEROSTRUCTURES BY MBE. Acta Physica Sinica, 1990, 39(12): 1959-1964.doi:10.7498/aps.39.1959 |
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.INTERFACIAL PROPERTIES OF Si/GaP(111) HETEROJUNCT10N GROWN BY MOLECULAR BEAM EPITAXY. Acta Physica Sinica, 1989, 38(8): 1265-1270.doi:10.7498/aps.38.1265 |
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HUANG YI, ZHOU JUN-MING, JIA WEI-YI, CHENG WEN-QIN, WANG YAN-YUN.LOW TEMPERATURE PHOTOLUMENESCENCE OF THE MODULATION DOPED HETEROSTRUCTURE GROWN BY MBE. Acta Physica Sinica, 1987, 36(2): 165-171.doi:10.7498/aps.36.165 |
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ZHANG YU-HENG, GAO YI-PING.THE V-H AND V-t RELATIONS FOR THE SQUID WITH DOUBLE JUNCTION. Acta Physica Sinica, 1986, 35(5): 561-569.doi:10.7498/aps.35.561 |
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