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Xiao Jia-Xing, Lu Jun, Zhu Li-Jun, Zhao Jian-Hua.Perpendicular magnetic properties of ultrathin L10-Mn1.67Ga films grown by molecular-beam epitaxy. Acta Physica Sinica, 2016, 65(11): 118105.doi:10.7498/aps.65.118105 |
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Zhang Ma-Lin, Ge Jian-Feng, Duan Ming-Chao, Yao Gang, Liu Zhi-Long, Guan Dan-Dan, Li Yao-Yi, Qian Dong, Liu Can-Hua, Jia Jin-Feng.Molecular beam epitaxy growth of multilayer FeSe thin film on SrTiO3 (001). Acta Physica Sinica, 2016, 65(12): 127401.doi:10.7498/aps.65.127401 |
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Li Wen-Tao, Liang Yan, Wang Wei-Hua, Yang Fang, Guo Jian-Dong.Precise control of LaTiO3(110) film growth by molecular beam epitaxy and surface termination of the polar film. Acta Physica Sinica, 2015, 64(7): 078103.doi:10.7498/aps.64.078103 |
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Zhu Meng-Yao, Lu Jun, Ma Jia-Lin, Li Li-Xia, Wang Hai-Long, Pan Dong, Zhao Jian-Hua.Molecular-beam epitaxy of high-quality diluted magnetic semiconductor (Ga, Mn)Sb single-crystalline films. Acta Physica Sinica, 2015, 64(7): 077501.doi:10.7498/aps.64.077501 |
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Wang Meng, Ou Yun-Bo, Li Fang-Sen, Zhang Wen-Hao, Tang Chen-Jia, Wang Li-Li, Xue Qi-Kun, Ma Xu-Cun.Molecular beam epitaxy of single unit-cell FeSe superconducting films on SrTiO3(001). Acta Physica Sinica, 2014, 63(2): 027401.doi:10.7498/aps.63.027401 |
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Hu Yi-Bin, Hao Zhi-Biao, Hu Jian-Nan, Niu Lang, Wang Lai, Luo Yi.Studies on the composition of InGaN/AlN quantum dots grown by molecular beam epitaxy. Acta Physica Sinica, 2012, 61(23): 237804.doi:10.7498/aps.61.237804 |
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Su Shao-Jian, Wang Wei, Zhang Guang-Ze, Hu Wei-Xuan, Bai An-Qi, Xue Chun-Lai, Zuo Yu-Hua, Cheng Bu-Wen, Wang Qi-Ming.Epitaxial growth of Ge0.975Sn0.025alloy films on Si(001) substrates by molecular beam epitaxy. Acta Physica Sinica, 2011, 60(2): 028101.doi:10.7498/aps.60.028101 |
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Zhang Chun-Zu, Zhang Ying, Zhou Zhi-Dong.Size effect on phase transition temperature of epitaxial ferroelectric films. Acta Physica Sinica, 2010, 59(9): 6620-6625.doi:10.7498/aps.59.6620 |
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Zhang Yan-Hui, Chen Ping-Ping, Li Tian-Xin, Yin Hao.InNSb single crystal films prepared on GaAs (001) substrates by molecular beam epitaxy. Acta Physica Sinica, 2010, 59(11): 8026-8030.doi:10.7498/aps.59.8026 |
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Zhang Ying-Tang, He Meng, Chen Zi-Yu, Lü Hui-Bin.Epitaxial growth of La0.67Sr0.33MnO3 on glass by laser molecular beam epitaxy. Acta Physica Sinica, 2009, 58(3): 2002-2004.doi:10.7498/aps.58.2002 |
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He Meng, Liu Guo-Zhen, Qiu Jie, Xing Jie, Lü Hui-Bin.Epitaxial growth of high quality TiN thin film on Si by laser molecular beam epitaxy. Acta Physica Sinica, 2008, 57(2): 1236-1240.doi:10.7498/aps.57.1236 |
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Yan Feng-Ping, Zheng Kai, Wang Lin, Li Yi-Fan, Gong Tao-Rong, Jian Shui-Sheng, K. Ogata, K. Koike, S. Sasa, M. Inoue, M. Yano.Measurement of thickness and refractive index of Zn1-xMgxO film grown on sapphire substrate by molecular beam epitaxy. Acta Physica Sinica, 2007, 56(7): 4127-4131.doi:10.7498/aps.56.4127 |
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CUI DA-FU, CHEN FAN, ZHAO TONG, SHI WEN-SHENG, CHEN ZHENG-HAO, ZHOU YUE-LIANG, LV HUI-BIN, YANG GUO-ZHEN, HUANG HUI-ZHONG, ZHANG HONG-XIA.TOPMOST SURFACE AND GROWTH MECHANISM OF BaTiO3 THIN FILM GROWN BY LAS ER MOLECULAR BEAM EPITAXY. Acta Physica Sinica, 2000, 49(9): 1878-1882.doi:10.7498/aps.49.1878 |
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LIU HONG-FEI, CHEN HONG, LI ZHI-QIANG, WAN LI, HUANG QI, ZHOU JUN-MING, LUO YI, HAN YING-JUN.EPITAXIALL GROWTH OF CUBIC AND HEXAGONAL GaN FILMS ON GaAs(001) SUBSTRATES BY MBE. Acta Physica Sinica, 2000, 49(6): 1132-1135.doi:10.7498/aps.49.1132 |
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WANG SHAO-QING, LIU QUAN-PU, YE HENG-QIANG.AN INCIPIENT EDGE DISLOCATION IN EPITAXIAL WURTZITE GaN. Acta Physica Sinica, 1998, 47(11): 1858-1861.doi:10.7498/aps.47.1858 |
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NIU ZHI-CHUAN, ZHOU ZENG-QI, LIN YAO-WANG, LI XIN-FENG, ZHANG YI, HU XIONG WEI, Lü ZHEN-DONG, YUAN ZHI-LIANG, XU ZHONG-YING.InGaAs/GaAs STRAINED RIDGE QUANTUM WIRES GROWN-BY MBE ON NONPLANAR SUBSTRATE. Acta Physica Sinica, 1997, 46(5): 969-974.doi:10.7498/aps.46.969 |
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ZHOU GUO-LIANG, SHENG CHI, FAN YONG-LIANG, JIANG WEI-DONG, YU MING-RBN.MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERI-ZATION OF GexSi1-x/Si STRAINED-LAYER SUPERLATTICES. Acta Physica Sinica, 1993, 42(7): 1121-1128.doi:10.7498/aps.42.1121-2 |
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Zhou Guo-liang Sheng Chi Fan Yong-liang Jiang Wei-dong Yu Ming-reng.MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERIZATION OF Ge_xSi_1-x_/Si STRAINED一AYER SUPERLATTICES. Acta Physica Sinica, 1991, 40(7): 1121-1128.doi:10.7498/aps.40.1121 |
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ZHOU GUO-LIANG, CHEN KE-MING, TIAN LIANG-GUANG.LOW TEMPERATURE GROWTH OF THIN Ge FILM ON Si SUBSTRATES BY MOLECULAR BEAM EPITAXY. Acta Physica Sinica, 1988, 37(10): 1607-1612.doi:10.7498/aps.37.1607 |
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