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Chen Jian, Xiong Kang-Lin, Feng Jia-Gui.Adsorption of CoPc molecules on silicene surface. Acta Physica Sinica, 2022, 71(4): 040501.doi:10.7498/aps.71.20211607 |
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Jiang Hang, Zhou Yu-Rong, Liu Feng-Zhen, Zhou Yu-Qin.Effect of annealing treatment on characteristics of surface plasmon resonance for indium tin oxide. Acta Physica Sinica, 2018, 67(17): 177802.doi:10.7498/aps.67.20180435 |
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Cai Xin-Yang, Wang Xin-Wei, Zhang Yu-Ping, Wang Deng-Kui, Fang Xuan, Fang Dan, Wang Xiao-Hua, Wei Zhi-Peng.Reduction of surface plasma loss of indium tin oxide thin films by regulating substrate temperature. Acta Physica Sinica, 2018, 67(18): 180201.doi:10.7498/aps.67.20180794 |
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Cheng Guang-Gui, Zhang Zhong-Qiang, Ding Jian-Ning, Yuan Ning-Yi, Xu Duo.Wetting behaviors of the molten silicon on graphite surface. Acta Physica Sinica, 2017, 66(3): 036801.doi:10.7498/aps.66.036801 |
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Gao Tan-Hua.Structural and electronic properties of hydrogenated bilayer silicene. Acta Physica Sinica, 2015, 64(7): 076801.doi:10.7498/aps.64.076801 |
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Huang Wei-Qi, Zhou Nian-Jie, Yin Jun, Miao Xin-Jian, Huang Zhong-Mei, Chen Han-Qiong, Su Qin, Liu Shi-Rong, Qin Chao-Jian.Shape and curved surface effect on silicon quantum dots. Acta Physica Sinica, 2013, 62(8): 084205.doi:10.7498/aps.62.084205 |
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Gao Hao, Liao Long-Zhong, Zhang Zhao-Hui.Experimental investigation on formation of Al-Si clusters and nanocrystals in the segregation of ion-implanted Al on Si(100). Acta Physica Sinica, 2009, 58(1): 427-431.doi:10.7498/aps.58.427 |
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Jiang Jin-Long, Li Wen-Jie, Zhou Li, Zhao Ru-Guang, Yang Wei-Sheng.Investigation of stable high-index silicon surfacesby means of LEED pattern analysis. Acta Physica Sinica, 2003, 52(1): 156-162.doi:10.7498/aps.52.156 |
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Li Wen-Jie, Jiang Jin-Long, Zhou Li, Zhao Nu-Guang, Yang Wei-Sheng.. Acta Physica Sinica, 2002, 51(11): 2567-2574.doi:10.7498/aps.51.2567 |
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LIU LI-MING, XIONG YU-QING, GUO YUN, LI GUAN-BIN, YANG DE-QUAN.PHOTOCHEMICAL REACTION ON ITO SURFACE INDUCED BY SOFT X-RAY IRRADIATION. Acta Physica Sinica, 2000, 49(9): 1883-1885.doi:10.7498/aps.49.1883 |
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YE LING.A THEORETICAL STUDY ON THE SURFACE ELECTRONIC STRUCTURES OF Si NANO-CLUSTERS. Acta Physica Sinica, 1996, 45(11): 1890-1897.doi:10.7498/aps.45.1890 |
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LI GU-BO, ZHANG FU-LONG, CHEN HUA-JIE, FAN HONG-LEI, YU MING-REN, HOU XIAO-YUA.SURFACE PASSIVATION OF LIGHT-EMITTING POROUS SILICON BY NITRIDE. Acta Physica Sinica, 1996, 45(7): 1232-1238.doi:10.7498/aps.45.1232 |
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SHEN HONG-LIE, YANG GEN-QING, ZHOU ZU-YAO, ZOU SHI-CHANG.INVESTIGATION OF AMPHOTERIC BEHAVIOR OF SILICON IMPLANTED INTO InP. Acta Physica Sinica, 1991, 40(3): 476-482.doi:10.7498/aps.40.476 |
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LIU KAI-FENG, CAI JING, SUN HENG-HUI, RUN YUN-ZHU, CAO YONG-MING.A STUDY ON THE PHYSICAL PROCESS OF INDIUM IMPLANTATION BY PULSE LASER AND THE DEFECT PROPERTIES IN n TYPE SILICON. Acta Physica Sinica, 1990, 39(7): 88-94.doi:10.7498/aps.39.88 |
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YE LING, XIE XI-DE.THE CHEMISORPTION OF RARE EARTH ELEMENT ON Si(111) SURFACE. Acta Physica Sinica, 1988, 37(10): 1593-1599.doi:10.7498/aps.37.1593 |
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JIANG ZUI-MIN, WU ZI-QIN.SURFACE VIBRATION MODES OF Si(111). Acta Physica Sinica, 1988, 37(4): 629-637.doi:10.7498/aps.37.629 |
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XING YI-RONG, W. RANKE.ORIENTATION DEPENDENCE OF OXYGEN ADSORPTION ON SILICON SURFACES. Acta Physica Sinica, 1986, 35(1): 110-114.doi:10.7498/aps.35.110 |
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ZHOU JUN-MING, HUANG YI, LIN ZHANG-DA.A STEEP CHANGE IN THE TEMPERATURE DEPENDENCE OF THE STICKING COEFFICIENT OF In ATOMS ON THE Si(111)4×1-In SURFACE. Acta Physica Sinica, 1984, 33(9): 1240-1245.doi:10.7498/aps.33.1240 |
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ZHOU JUN-MING.CHARGE TRANSFER AT In-Si (111) INTERFACE AND SURFACE ELECTROMIGRATION OF INDIUM ADATOMS. Acta Physica Sinica, 1983, 32(5): 640-647.doi:10.7498/aps.32.640 |
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