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Li Ran-Ran, Yin Yu-Peng, Hideo Watanabe, Yi Xiao-Ou, Han Wen-Tuo, Liu Ping-Ping, Zhan Qian, Wan Fa-Rong.Evolution of dislocation loops and effect of annealing temperature on hydrogen-ion-implanted Fe-based binary alloys. Acta Physica Sinica, 2022, 71(13): 136101.doi:10.7498/aps.71.20220137 |
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Xiong Yu-Wei, Yin Kui-Bo, Wen Yi-Feng, Xin Lei, Yao Li-Bing, Zhu Chong-Yang, Sun Li-Tao.In situobservation of lithiation mechanism of SnO2nanoparticles. Acta Physica Sinica, 2019, 68(15): 158201.doi:10.7498/aps.68.20190431 |
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Cui Li-Juan, Gao Jin, Du Yu-Feng, Zhang Gao-Wei, Zhang Lei, Long Yi, Yang Shan-Wu, Zhan Qian, Wan Fa-Rong.Characterization of dislocation loops in hydrogen-ion irradiated vanadium. Acta Physica Sinica, 2016, 65(6): 066102.doi:10.7498/aps.65.066102 |
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Zhang Yue, Zhao Jian, Dong Peng, Tian Da-Xi, Liang Xing-Bo, Ma Xiang-Yang, Yang De-Ren.Effects of dopants on the growth of oxidation-induced stacking faults in heavily doped n-type Czochralaki silicon. Acta Physica Sinica, 2015, 64(9): 096105.doi:10.7498/aps.64.096105 |
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Zhang Guang-Chao, Xu Jin.Investigation of copper precipitation in denuded zone in Czochralski silicon. Acta Physica Sinica, 2013, 62(7): 076103.doi:10.7498/aps.62.076103 |
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Chen Cheng-Zhao, Zheng Yuan-Yu, Huang Shi-Hao, Li Cheng, Lai Hong-Kai, Chen Song-Yan.Epitaxial growth of thick Ge layers with low dislocation density on silicon substrate by UHV/CVD. Acta Physica Sinica, 2012, 61(7): 078104.doi:10.7498/aps.61.078104 |
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Wu Tai-Quan.Ge-vacancy complexes in Ge-doped czochralski silicon crystal. Acta Physica Sinica, 2012, 61(6): 063101.doi:10.7498/aps.61.063101 |
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Lin Zhi-Yu, Zhang Jin-Cheng, Xu Sheng-Rui, Lü Ling, Liu Zi-Yang, Ma Jun-Cai, Xue Xiao-Yong, Xue Jun-Shuai, Hao Yue.TEM study of GaN films on vicinal sapphire (0001) substrates by MOCVD. Acta Physica Sinica, 2012, 61(18): 186103.doi:10.7498/aps.61.186103 |
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Huang Yi-Na, Wan Fa-Rong, Jiao Zhi-Jie.The type identification of dislocation loops by TEM and the loop formation in pure Fe implanted with H+*. Acta Physica Sinica, 2011, 60(3): 036802.doi:10.7498/aps.60.036802 |
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Cui Can, Ma Xiang-Yang, Yang De-Ren.Effect of ramping from low temperatures on oxygen precipitation in Czochralski silicon. Acta Physica Sinica, 2008, 57(2): 1037-1042.doi:10.7498/aps.57.1037 |
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Xu Jin, Li Fu-Long, Yang De-Ren.Grown-in oxygen precipitates in czochralski silicon investigated by transmission electron microscopy. Acta Physica Sinica, 2007, 56(7): 4113-4116.doi:10.7498/aps.56.4113 |
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Li Yang-Xian, Yang Shuai, Chen Gui-Feng, Ma Qiao-Yun, Niu Ping-Ｊuan, Chen Dong-Feng, Li Hong-Tao, Wang Bao-Yi.Investigation of the acceptor and donor in fast neutron irradiated Czochralski s ilicon. Acta Physica Sinica, 2005, 54(4): 1783-1787.doi:10.7498/aps.54.1783 |
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Liu Xiang-Fei, Jiang Chang-Zhong, Ren Feng, Fu Qiang.Optical absorption, Raman spectra and TEM study of Ag nanoparticles formed by ion implantation into a-SiO2. Acta Physica Sinica, 2005, 54(10): 4633-4637.doi:10.7498/aps.54.4633 |
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Yang Shuai, Li Yang-Xian, Ma Qiao-Yun, Xu Xue-Wen, Niu Ping-Juan, Li Yong-Zhang, Niu Sheng-Li, Li Hong-Tao.FTIR study an VO2 defect in fast neutron irradiated Czochralski silicon. Acta Physica Sinica, 2005, 54(5): 2256-2260.doi:10.7498/aps.54.2256 |
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Jiang Le, Yang De-Ｒen, Yu Ｘue-Ｇong, Ma Xiang-Yang, Xu Jin, Que Duan-Lin.Effect of nitrogen on oxygen precipitation in Czochralski silicon during high-te mperature annealing. Acta Physica Sinica, 2003, 52(8): 2000-2004.doi:10.7498/aps.52.2000 |
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