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Meng Xiang-Chen, Wang Dan, Cai Ya-Hui, Ye Zhen, He Yong-Ning, Xu Ya-Nan.Secondary electron emission suppression on alumina surface and its application in multipactor suppression. Acta Physica Sinica, 2023, 72(10): 107901.doi:10.7498/aps.72.20222404 |
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Wang Yi-Lin, Lan Zi-Xuan, Du Hui-Wei, Zhao Lei, Ma Zhong-Quan.Phosphorus oxides in heavily doped polysilicon films. Acta Physica Sinica, 2022, 71(18): 188201.doi:10.7498/aps.71.20220706 |
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Zhang Ning, Xu Kai-Kai, Chen Yan-Xu, Zhu Kun-Feng, Zhao Jian-Ming, Yu Qi.Application prospect of metal-oxide-semiconductor silicon light emitting devices in integrated circuits. Acta Physica Sinica, 2019, 68(16): 167803.doi:10.7498/aps.68.20191004 |
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Duan Bao-Xing, Li Chun-Lai, Ma Jian-Chong, Yuan Song, Yang Yin-Tang.New folding lateral double-diffused metal-oxide-semiconductor field effect transistor with the step oxide layer. Acta Physica Sinica, 2015, 64(6): 067304.doi:10.7498/aps.64.067304 |
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Yao Rui, Wang Fu-He, Zhou Yun-Song.Diffusion of oxygen atom near Zr(0001) surface. Acta Physica Sinica, 2009, 58(13): 177-S182.doi:10.7498/aps.58.177 |
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Liu Xiu-Xi, Wang Gong-Tang.Fabrication of high voltage thyristor based on silicon organic compounds and metal oxides type isolation protective material. Acta Physica Sinica, 2008, 57(1): 576-580.doi:10.7498/aps.57.576 |
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LIU MING, WANG ZI-OU, XI ZHONG-HE, HE YU-LIANG.FABRICATION AND STUDY OF PHOSPHOR DOPED HYDROGENATED NANO-CRYSTALLINE SILICON FILM. Acta Physica Sinica, 2000, 49(5): 983-988.doi:10.7498/aps.49.983 |
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ZHU MEI-FANG, CHEN GUO, XU HUAI-ZHE, HAN YI-QIN, XIE KAN, LIU ZHEN-XIANG, TANG YONG, CHEN PEI-YI.GREEN/BLUE LIGHT EMISSION AND LUMINESCENT-MECHANISM OF NANOCRYSTALLINE SILICON-EMBEDDED IN SILICON OXIDE THIN FILM. Acta Physica Sinica, 1997, 46(8): 1645-1651.doi:10.7498/aps.46.1645 |
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LONG DE-SHUN, WANG YAN-SEN, FANG DU-FEI, TANG JIA-YONG.CALCULATIONS OF THE SURFACE AND DIFFUSION BARRIERS FOR OXYGEN PENETRATION ON METALS AND THEIR OXIDES. Acta Physica Sinica, 1997, 46(10): 1894-1900.doi:10.7498/aps.46.1894 |
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SHEN XUE-CHU, ZHU JING-BING, MU YAO-MING, LIU PU-LIN.WAVEFUNCTION MIXTURE AND COMPOSITION FOR HYBRIDIZED ZEEMAN STATES OF P IN Si. Acta Physica Sinica, 1994, 43(9): 1544-1552.doi:10.7498/aps.43.1544 |
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LI XIAO-LEI, LU FANG, SUN HENG-HUI, HUANG QING-HONG.STUDY OF DEFECTS IN LOW-DOSE P+ IMPLANTED AND RAPID THERMAL ANNEALED SILICON. Acta Physica Sinica, 1992, 41(6): 985-991.doi:10.7498/aps.41.985 |
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SHEN SAN-GUO, FAN XI-QING.ELECTRONIC STRUCTURE OF JAHN-TELLER DISTORTED PHOSPOROUS-VACANCY COMPLEX IN SILICON. Acta Physica Sinica, 1990, 39(10): 1653-1660.doi:10.7498/aps.39.1653 |
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WU JIAN, LU HUAl-XIAN, DU YOU-WEI, GAO XUE-KUI, WANG TING-XIANG.A STUDY ON THE MAGNETIC PROPERTIES OF SURFACE OXIDE LAYERS OF ULTRAFINE IRON PARTICLES. Acta Physica Sinica, 1988, 37(12): 2044-2047.doi:10.7498/aps.37.2044 |
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ZENG QING-CHENG.MICROSCOPIC OBSERVATION OF DIFFUSION DISTRIBUTION OF IONIZED IMPURITIES IN SILICON. Acta Physica Sinica, 1981, 30(2): 249-253.doi:10.7498/aps.30.249 |
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LIN HUNG-I, CHENG JUNG, SHUNG FA-HUA, CHEN CHANG-LAN.ELECTRON SPIN RESONANCE IN PHOSPHORUS-DOPED SILICON. Acta Physica Sinica, 1966, 22(5): 525-532.doi:10.7498/aps.22.525 |
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LING SHU-LEN, HUANG CHAANG, SHU BIENG-HUA.MEASUREMENT OF THE IMPURITY DISTRIBUTION OF DIFFUSED LAYERS IN SILICON BY THE FOUR-POINT PROBE AND THE ANODIC OXIDATION TECHNIQUE. Acta Physica Sinica, 1964, 20(7): 643-653.doi:10.7498/aps.20.643 |
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CHEN CHEN-CHIA, YOUNG CHENG-CHING, HUANG HENG-CHI.DIFFUSION OF PHOSPHORUS INTO SILICON THROUGH SILICON DIOXIDE FILM GROWN BY THERMAL OXIDATION. Acta Physica Sinica, 1964, 20(7): 662-669.doi:10.7498/aps.20.662 |
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.ДИФФУЗИЯ ЧУЖЕРОДНЫХ ПРИМЕСЕЙ В Cu2O. Acta Physica Sinica, 1958, 14(6): 442-448.doi:10.7498/aps.14.442 |
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