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Li Wen-Hao, Xie Yu-Qing, Shi Hai-Zheng, Lu Peng-Fei, Ren Jing.Mechanisms of rare earth ion distribution in fluorosilicate glass containing KMnF3nanocrystal. Acta Physica Sinica, 2022, 71(8): 084205.doi:10.7498/aps.71.20211953 |
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Liu Liang-You, Gao Song, Li Sha, Li Zhao-Tong, Xia Yi-Fan.Research progress of diffusion sensitive gradient field encoding schemes in magnetic resonance diffusion tensor imaging. Acta Physica Sinica, 2020, 69(3): 038702.doi:10.7498/aps.69.20191346 |
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Wu Xin-Yu, Han Wei-Hua, Yang Fu-Hua.Quantum transport relating to impurity quantum dots in silicon nanostructure transistor. Acta Physica Sinica, 2019, 68(8): 087301.doi:10.7498/aps.68.20190095 |
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Zhang Zhi-Gang, Liu Feng-Rui, Zhang Qing-Chuan, Cheng Teng, Wu Xiao-Ping.Trapping of multiple particles by space speckle field and infrared microscopy. Acta Physica Sinica, 2014, 63(2): 028701.doi:10.7498/aps.63.028701 |
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Hua Yu-Chao, Dong Yuan, Cao Bing-Yang.Monte Carlo simulation of phonon ballistic diffusive heat conduction in silicon nanofilm. Acta Physica Sinica, 2013, 62(24): 244401.doi:10.7498/aps.62.244401 |
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Zhang Zhi-Gang, Liu Feng-Rui, Zhang Qing-Chuan, Cheng Teng, Gao Jie, Wu Xiao-Ping.Infrared microscopic observation of trapped absorbing particles. Acta Physica Sinica, 2013, 62(20): 208702.doi:10.7498/aps.62.208702 |
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Sun Yun-Bin, Zhang Xiang-Qun, Li Guo-Ke, Yang Hai-Tao, Cheng Zhao-Hua.Effects of oxygen vacancy on impurity distribution and exchange interaction in Co-doped TiO2. Acta Physica Sinica, 2012, 61(2): 027503.doi:10.7498/aps.61.027503 |
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Yu Chen-Hui, Zhang Bo, Yu Li-Bo, Li Ya-Jun, Lu Wei, Shen Xue-Chu.Compensating impurity in high purity silicon single crystal investigated by photo-thermal ionization spectroscopy. Acta Physica Sinica, 2008, 57(2): 1102-1108.doi:10.7498/aps.57.1102 |
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LIU JIAN, GAO ZHONG-CHENG, ZHANG CHUN-PING, TIAN JIAN-GUO, ZHANG GUANG-YIN.OPTICAL MICROSCOPIC STUDY OF THE INFLUENCE OF DIFFERENT ELECTRODES ON THE IONIC TRANSPORT CHARACTER OF α-LiIO3. Acta Physica Sinica, 1998, 47(12): 2040-2045.doi:10.7498/aps.47.2040 |
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SHI XIAO-HONG, LIU PU-LIN, GONG DA-WEI, CHEN ZHANG-HAI, SHI GUO-LIANG, SHEN XUE-CHU.PHOTOTHERMAL IONIZATION SPECTROSCOPY FOR SHALLOW DONOR IN Si1-xGex EPITAXIAL LAYER. Acta Physica Sinica, 1997, 46(2): 370-374.doi:10.7498/aps.46.370 |
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Pan Bi-Cai, Xia Shang-Da.. Acta Physica Sinica, 1995, 44(5): 745-754.doi:10.7498/aps.44.745 |
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CHEN JIAN-WEN, WANG ZHI-JIANG.ELECTRON HOLOGRAPHY AND ITS APPLICATION ON OBSERVATION OF MICRO-ELECTROSTATIC FIELD DISTRIBUTION. Acta Physica Sinica, 1993, 42(12): 1919-1927.doi:10.7498/aps.42.1919 |
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YU ZHI-YI, HUANG YE-XIAO, CHEN JIAN-XIANG, YE HONG-JUAN, SHEN XUE-CHU, E. E. HALLER.FOURIER TRANSFORM PHOTOTHERMAL IONIZATION SPEC-TROSCOPY OF SHALLOW IMPURITIES IN SEMICONDUCTORS. Acta Physica Sinica, 1989, 38(11): 1869-1873.doi:10.7498/aps.38.1869 |
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WU JI-AN.ELECTRONIC STATES OF SUBSTITUTIONAL AND INTERSTITIAL GROUP-IB IMPURITIES IN SILICON. Acta Physica Sinica, 1988, 37(7): 1124-1130.doi:10.7498/aps.37.1124 |
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XIA JIAN-BAI.DEEP LEVELS OF TRANSITION IMPURITIES IN SILICON. Acta Physica Sinica, 1984, 33(10): 1418-1426.doi:10.7498/aps.33.1418 |
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XIA RI-YUAN.IMPURITY OUT-DIFFUSION MODEL IN RECRYSTALLIZATION OF AMORPHOUS LAYER DUE TO HIGH DOSE ION IMPLANTATION. Acta Physica Sinica, 1980, 29(5): 566-576.doi:10.7498/aps.29.566 |
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LIN HONG-YI.AN INVESTIGATION OF THE IMPURITY PROFILE OF THE 4mm BAND SILICON AVALANCHE DIODE BY MEANS OF THE SCHOTTKY BARRIER CHARACTERISTICS. Acta Physica Sinica, 1978, 27(3): 291-302.doi:10.7498/aps.27.291 |
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.ДИФФУЗИЯ ФОСФОРА В ОКИСНОМ СЛОЕ НА ПОВЕРХНОСТИ КРЕМНИЯ. Acta Physica Sinica, 1965, 21(3): 496-502.doi:10.7498/aps.21.496 |
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LING SHU-LEN, HUANG CHAANG, SHU BIENG-HUA.MEASUREMENT OF THE IMPURITY DISTRIBUTION OF DIFFUSED LAYERS IN SILICON BY THE FOUR-POINT PROBE AND THE ANODIC OXIDATION TECHNIQUE. Acta Physica Sinica, 1964, 20(7): 643-653.doi:10.7498/aps.20.643 |
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.ДИФФУЗИЯ ЧУЖЕРОДНЫХ ПРИМЕСЕЙ В Cu2O. Acta Physica Sinica, 1958, 14(6): 442-448.doi:10.7498/aps.14.442 |
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