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Zhang Hao-Jie, Zhang Ru-Fei, Fu Li-Cheng, Gu Yi-Lun, Zhi Guo-Xiang, Dong Jin-Ou, Zhao Xue-Qin, Ning Fan-Long.(La1–xSrx)(Zn1–xMnx)SbO: A novel 1111-type diluted magnetic semiconductor. Acta Physica Sinica, 2021, 70(10): 107501.doi:10.7498/aps.70.20201966 |
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Tang Hui, Tang Xin-Gui, Jiang Yan-Ping, Liu Qiu-Xiang, Li Wen-Hua.Oxygen vacancy effect on ionic conductivity and relaxation phenomenon of SrxBa1–xNb2O6ceramics. Acta Physica Sinica, 2019, 68(22): 227701.doi:10.7498/aps.68.20190562 |
[3] |
Wang Ze-Pu, Fu Nian, Yu Han, Xu Jing-Wei, He Qi, Zheng Shu-Kai, Ding Bang-Fu, Yan Xiao-Bing.Enhancing oxygen vacancy photocatalytic efficiency of bismuth tungstate using In-doped W site. Acta Physica Sinica, 2019, 68(21): 217102.doi:10.7498/aps.68.20191010 |
[4] |
Fan Ji-Yu, Feng Yu, Lu Di, Zhang Wei-Chun, Hu Da-Zhi, Yang Yu-E, Tang Ru-Jun, Hong Bo, Ling Lang-Sheng, Wang Cai-Xia, Ma Chun-Lan, Zhu Yan.Magnetic and eletronic transport properties in n-type diluted magnetic semiconductor Ge0.96–xBixFe0.04Te film. Acta Physica Sinica, 2019, 68(10): 107501.doi:10.7498/aps.68.20190019 |
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Li Ping, Xu Yu-Tang.Monte Carlo simulation of time-dependent dielectric breakdown of oxide caused by migration of oxygen vacancies. Acta Physica Sinica, 2017, 66(21): 217701.doi:10.7498/aps.66.217701 |
[6] |
Dai Guang-Zhen, Jiang Xian-Wei, Xu Tai-Long, Liu Qi, Chen Jun-Ning, Dai Yue-Hua.Effect of oxygen vacancy on lattice and electronic properties of HfO2 by means of density function theory study. Acta Physica Sinica, 2015, 64(3): 033101.doi:10.7498/aps.64.033101 |
[7] |
Jiang Ran, Du Xiang-Hao, Han Zu-Yin, Sun Wei-Deng.Cluster distribution for oxygen vacancy in Ti/HfO2/Pt resistive switching memory device. Acta Physica Sinica, 2015, 64(20): 207302.doi:10.7498/aps.64.207302 |
[8] |
Zhu Meng-Yao, Lu Jun, Ma Jia-Lin, Li Li-Xia, Wang Hai-Long, Pan Dong, Zhao Jian-Hua.Molecular-beam epitaxy of high-quality diluted magnetic semiconductor (Ga, Mn)Sb single-crystalline films. Acta Physica Sinica, 2015, 64(7): 077501.doi:10.7498/aps.64.077501 |
[9] |
Gong Yu, Chen Bai-Hua, Xiong Liang-Ping, Gu Mei, Xiong Jie, Gao Xiao-Ling, Luo Yang-Ming, Hu Sheng, Wang Yu-Hua.Effect of oxygen vacancies on the fluorescence and phosphorescence properties of Ca5MgSi3O12:Eu2+, Dy3+. Acta Physica Sinica, 2013, 62(15): 153201.doi:10.7498/aps.62.153201 |
[10] |
Wang Shi-Wei, Zhu Ming-Yuan, Zhong Min, Liu Cong, Li Ying, Hu Ye-Min, Jin Hong-Ming.Effects of pulsed magnetic field on Mn-doped ZnO diluted magnetic semiconductor prepared by hydrothermal method. Acta Physica Sinica, 2012, 61(19): 198103.doi:10.7498/aps.61.198103 |
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Zhu Ming-Yuan, Liu Cong, Bo Wei-Qiang, Shu Jia-Wu, Hu Ye-Min, Jin Hong-Ming, Wang Shi-Wei, Li Ying.Synthesis of Cr-doped ZnO diluted magnetic semiconductor by hydrothermal method under pulsed magnetic field. Acta Physica Sinica, 2012, 61(7): 078106.doi:10.7498/aps.61.078106 |
[12] |
Yang Wei, Ji Yang, Luo Hai-Hui, Ruan Xue-Zhong, Wang Wei-Zhu, Zhao Jian-Hua.Electronic noise of diluted magnetic semiconductor (Ga,Mn)As around Curie point. Acta Physica Sinica, 2009, 58(12): 8560-8565.doi:10.7498/aps.58.8560 |
[13] |
Lu Zhong-Lin, Zou Wen-Qin, Xu Ming-Xiang, Zhang Feng-Ming.Synthesis and electric, magnetic properties of single crystalline and twin-crystalline Co-doped ZnO thin films. Acta Physica Sinica, 2009, 58(12): 8467-8472.doi:10.7498/aps.58.8467 |
[14] |
Chen Jing, Jin Guo-Jun, Ma Yu-Qiang.Effect of oxygen vacancy defect on the magnetic properties of Co-doped ZnO diluted magnetic semiconductor. Acta Physica Sinica, 2009, 58(4): 2707-2712.doi:10.7498/aps.58.2707 |
[15] |
Wang Ye-An, Qin Fu-Wen, Wu Dong-Jiang, Wu Ai-Min, Xu Yin, Gu Biao.Analysis of diluted magnetic semiconductor GaMnN grown by electron cyclotron resonance-plasma enhanced metal organic chemical vapor deposition. Acta Physica Sinica, 2008, 57(1): 508-513.doi:10.7498/aps.57.508 |
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Yu Zhou, Li Xiang, Long Xue, Cheng Xing-Wang, Wang Jing-Yun, Liu Ying, Cao Mao-Sheng, Wang Fu-Chi.Study of synthesis and magnetic properties of Mn-doped ZnO diluted magnetic semiconductors. Acta Physica Sinica, 2008, 57(7): 4539-4544.doi:10.7498/aps.57.4539 |
[17] |
Lin Qiu-Bao, Li Ren-Quan, Zeng Yong-Zhi, Zhu Zi-Zhong.Electronic and magnetic properties of 3d transition-metal-doped Ⅲ-Ⅴ semiconductors:first-principle calculations. Acta Physica Sinica, 2006, 55(2): 873-878.doi:10.7498/aps.55.873 |
[18] |
Wei Zhi-Ren, Li Jun, Liu Chao, Lin Lin, Zheng Yi-Bo, Ge Shi-Yan, Zhang Hua-Wei, Dong Guo-Yi, Dou Jun-Hong.Effect of Cu on the magnetism of Zn1-xFexO DMS. Acta Physica Sinica, 2006, 55(10): 5521-5524.doi:10.7498/aps.55.5521 |
[19] |
Wang Yi, Sun Lei, Han De-Dong, Liu Li-Feng, Kang Jin-Feng, Liu Xiao-Yan, Zhang Xing, Han Ru-Qi.Room-temperature ferromagnetism in Co-doped ZnO diluted magnetic semiconductor. Acta Physica Sinica, 2006, 55(12): 6651-6655.doi:10.7498/aps.55.6651 |
[20] |
Yao Ming-Zhen, Gu Mu.Theoretical study on defects associated with oxygen vacancy in PbWO4 crystal. Acta Physica Sinica, 2003, 52(2): 459-462.doi:10.7498/aps.52.459 |