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Liu Qiang, Ni Yao, Liu Lu, Sun Lin, Liu Jia-Qi, Xu Wen-Tao.Artificial synapses based on layered multi-component metal oxides. Acta Physica Sinica, 2022, 71(14): 148501.doi:10.7498/aps.71.20220303 |
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Pei Ming-Hui, Tian Yu, Zhang Jin-Xing.Control of surface structures and functionalities in perovskite-type ferroelectric oxides and their potential applications. Acta Physica Sinica, 2020, 69(21): 217709.doi:10.7498/aps.69.20200884 |
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Zhang Ning, Xu Kai-Kai, Chen Yan-Xu, Zhu Kun-Feng, Zhao Jian-Ming, Yu Qi.Application prospect of metal-oxide-semiconductor silicon light emitting devices in integrated circuits. Acta Physica Sinica, 2019, 68(16): 167803.doi:10.7498/aps.68.20191004 |
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Zhao Yi-Han, Duan Bao-Xing, Yuan Song, Lü Jian-Mei, Mei Yang.Novel lateral double-diffused MOSFET with vertical assisted deplete-substrate layer. Acta Physica Sinica, 2017, 66(7): 077302.doi:10.7498/aps.66.077302 |
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Zhang Jing-Shui, Kong Ling-Qin, Dong Li-Quan, Liu Ming, Zuo Jian, Zhang Cun-Lin, Zhao Yue-Jin.Diffusion part in terahertz complementary metal oxide semiconductor transistor detector model. Acta Physica Sinica, 2017, 66(12): 127302.doi:10.7498/aps.66.127302 |
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Du Yong-Ping, Liu Hui-Mei, Wan Xian-Gang.Novel properties of 5d transition metal oxides. Acta Physica Sinica, 2015, 64(18): 187201.doi:10.7498/aps.64.187201 |
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Yang Shuai, Tang Xiao-Yan, Zhang Yu-Ming, Song Qing-Wen, Zhang Yi-Men.Influence of charge imbalance on breakdown voltage of 4H-SiC semi-superjunction VDMOSFET. Acta Physica Sinica, 2014, 63(20): 208501.doi:10.7498/aps.63.208501 |
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Wang Chun-Hua, Xu Hao, Wan Zhao, Hu Yan.A Colpitts chaotic oscillator based on metal oxide semiconductor transistors and its synchronizaiton research. Acta Physica Sinica, 2013, 62(20): 208401.doi:10.7498/aps.62.208401 |
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Xu Li-Jun, Zhang He-Ming.Drain-induced barrier-lowering effect in surrounding-gate schottky barrier metal-oxide semiconductor field transistor. Acta Physica Sinica, 2013, 62(10): 108502.doi:10.7498/aps.62.108502 |
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Qu Jiang-Tao, Wang Xiao-Yan, Zhang He-Ming, Wang Guan-Yu, Song Jian-Jun, Qin Shan-Shan.Drain-induced barrier-lowering effects on threshold voltage in short-channel strained Si metal-oxide semiconductor field transistor. Acta Physica Sinica, 2011, 60(2): 027102.doi:10.7498/aps.60.027102 |
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Yao Rui, Wang Fu-He, Zhou Yun-Song.Diffusion of oxygen atom near Zr(0001) surface. Acta Physica Sinica, 2009, 58(13): 177-S182.doi:10.7498/aps.58.177 |
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Liu Xiu-Xi, Wang Gong-Tang.Fabrication of high voltage thyristor based on silicon organic compounds and metal oxides type isolation protective material. Acta Physica Sinica, 2008, 57(1): 576-580.doi:10.7498/aps.57.576 |
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Li Jia-Yang, Li Rong-Wu, Sun Jun-Dong, Liu Shao-Jun.Computation of the Ehrlich-Schwoebel barrier to adatom diffusion in heteroepitaxial systems. Acta Physica Sinica, 2007, 56(1): 446-451.doi:10.7498/aps.56.446 |
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Zeng Zhong-Ming, Han Xiu-Feng, Du Guan-Xiang, Zhan Wen-Shan, Wang Yong, Zhang Ze.Magnetoresistance effect of double-barrier magnetic tunneling junction applied in spin transistors. Acta Physica Sinica, 2005, 54(7): 3351-3356.doi:10.7498/aps.54.3351 |
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LI Ya, Chen Ling-Yan, Zhang Zhe, Wu Yong-Gang, Qiao Yi, Xu Wei-Xin.. Acta Physica Sinica, 2001, 50(1): 79-82.doi:10.7498/aps.50.79 |
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KANG JIN-FENG, CHEN XIN, WANG YOU-XIANG, HAN RU-QI, XIONG GUANG-CHENG, LIAN GUI-JUN, LI JIE, WU SI-CHENG.DIFFERENT INTERDIFFUSION CHARACTERISTICS BETWEEN Ag AND Al/YBa_2Cu_3O_(7-x) CONTACT INTERFACE. Acta Physica Sinica, 1995, 44(11): 1831-1838.doi:10.7498/aps.44.1831 |
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WANG XIE-WEN, WU SI-CHENG.XPS STUDY OF THE OXIDES ON THE SURFACE OF NbN THIN FILM. Acta Physica Sinica, 1985, 34(1): 112-116.doi:10.7498/aps.34.112 |
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.ДИФФУЗИЯ ФОСФОРА В ОКИСНОМ СЛОЕ НА ПОВЕРХНОСТИ КРЕМНИЯ. Acta Physica Sinica, 1965, 21(3): 496-502.doi:10.7498/aps.21.496 |
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