[1] |
Zhao Jian-Cheng, Wu Chao-Xing, Guo Tai-Liang.Carrier transport model of non-carrier-injection light-emitting diode. Acta Physica Sinica, 2023, 72(4): 048503.doi:10.7498/aps.72.20221831 |
[2] |
Xu Chong, Niu Lian-Bin, Qian Ya-Cui, Wen Lin, Xiong Yuan-Qiang, Peng Hao-Nan, Guan Yun-Xia.Research on Fe(NH2trz)3·(BF4)2doped polyfluorene organic light-emitting devices. Acta Physica Sinica, 2021, 70(7): 077202.doi:10.7498/aps.70.20201444 |
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Wang Dang-Hui, Xu Tian-Han.Low-frequency generation-recombination noise behaviors of blue/violet-light-emitting diode. Acta Physica Sinica, 2019, 68(12): 128104.doi:10.7498/aps.68.20190189 |
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Qu Zi-Han, Chu Ze-Ma, Zhang Xing-Wang, You Jing-Bi.Research progress of efficient green perovskite light emitting diodes. Acta Physica Sinica, 2019, 68(15): 158504.doi:10.7498/aps.68.20190647 |
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Wang Dang-Hui, Xu Tian-Han, Wang Rong, Luo She-Ji, Yao Ting-Zhen.Research on emission transition mechanisms of InGaN/GaN multiple quantum well light-emitting diodes using low-frequency current noise. Acta Physica Sinica, 2015, 64(5): 050701.doi:10.7498/aps.64.050701 |
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Mao Qing-Hua, Liu Jun-Lin, Quan Zhi-Jue, Wu Xiao-Ming, Zhang Meng, Jiang Feng-Yi.Influences of p-type layer structure and doping profile on the temperature dependence of the foward voltage characteristic of GaInN light-emitting diode. Acta Physica Sinica, 2015, 64(10): 107801.doi:10.7498/aps.64.107801 |
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Chen Zhan-Xu, Wan Wei, He Ying-Ji, Chen Geng-Yan, Chen Yong-Zhu.Light-extraction enhancement of GaN-based LEDs by closely-packed nanospheres monolayer. Acta Physica Sinica, 2015, 64(14): 148502.doi:10.7498/aps.64.148502 |
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Chen Wei-Chao, Tang Hui-Li, Luo Ping, Ma Wei-Wei, Xu Xiao-Dong, Qian Xiao-Bo, Jiang Da-Peng, Wu Feng, Wang Jing-Ya, Xu Jun.Research progress of substrate materials used for GaN-Based light emitting diodes. Acta Physica Sinica, 2014, 63(6): 068103.doi:10.7498/aps.63.068103 |
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Gao Hui, Kong Fan-Min, Li Kang, Chen Xin-Lian, Ding Qing-An, Sun Jing.Structural optimization of GaN blue light LED with double layers of photonic crystals. Acta Physica Sinica, 2012, 61(12): 127807.doi:10.7498/aps.61.127807 |
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Zhu Li-Hong, Cai Jia-Fa, Li Xiao-Ying, Deng Biao, Liu Bao-Lin.Luminous performance improvement of InGaN/GaN light-emitting diodes by modulating In content in well layers. Acta Physica Sinica, 2010, 59(7): 4996-5001.doi:10.7498/aps.59.4996 |
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Kan Peng-Zhi, Zhao Su-Ling, Xu Zheng, Kong Chao, Wang Da-Wei, Yan Yue.The applications of ZnO nanorods in poly [2-methoxy-5-(2-ethyl-hexyloxy)-1, 4-phenylene vinylene]solid state cathodoluminescence device. Acta Physica Sinica, 2010, 59(1): 616-619.doi:10.7498/aps.59.616 |
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Li Bing-Qian, Zheng Tong-Chang, Xia Zheng-Hao.Temperature characteristics of the forward voltage of GaN based blue light emitting diodes. Acta Physica Sinica, 2009, 58(10): 7189-7193.doi:10.7498/aps.58.7189 |
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Li Chun, Peng Jun-Biao, Zeng Wen-Jin.Organic red light-emitting diodes with a soluble luminescent compound and a novel TPBI/Ag cathode. Acta Physica Sinica, 2009, 58(3): 1992-1996.doi:10.7498/aps.58.1992 |
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Kong Chao, Xu Zheng, Zhao Su-Ling, Zhang Fu-Jun, Huang Jin-Ying, Yan Guang, Li Jun-Ming.Solid state cathodoluminescence of poly (2-methoxy-5-(2-ethyl-hexyloxy)-1,4-phenylene vinylene in devices with Si3N4 as the electronic accelerating layer. Acta Physica Sinica, 2008, 57(12): 7891-7895.doi:10.7498/aps.57.7891 |
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Xiong Chuan-Bing, Jiang Feng-Yi, Wang Li, Fang Wen-Qing, Mo Chun-Lan.The investigation on the interference phenomenon in electroluminescence spectrum of vertical structured InGaAlN multiple quantum well light-emitting diodes. Acta Physica Sinica, 2008, 57(12): 7860-7864.doi:10.7498/aps.57.7860 |
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Li Yuan, Zhao Su-Ling, Xu Zheng, Zhang Fu-Jun, Huang Jin-Zhao, Song Lin, Ouyang Ping.Reseach on improving the electron injection in SSCL. Acta Physica Sinica, 2007, 56(9): 5526-5530.doi:10.7498/aps.56.5526 |
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Suo Fan, Yu Jun-Sheng, Deng Jing, Jiang Ya-Dong, Wang Rui, Wang Wei-Zhi, Liu Tian-Xi.Electroluminescence characteristics of a blend system based on a novel fluorene-carbazole copolymer and PVK doping system. Acta Physica Sinica, 2007, 56(11): 6685-6690.doi:10.7498/aps.56.6685 |
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Liu Nai-Xin, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Han Jun, Shen Guang-Di.Growth of p-GaN at low temperature and its properties as light emitting diodes. Acta Physica Sinica, 2006, 55(3): 1424-1429.doi:10.7498/aps.55.1424 |
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Hu Jin, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, Zhou Jiang.Noise as a representation for reliability of light emitting diode. Acta Physica Sinica, 2006, 55(3): 1384-1389.doi:10.7498/aps.55.1384 |
[20] |
XU XIU-LAI, XU ZHENG, HOU YAN-BING, SU YAN-MEI, XU XU-RONG.PREPARATION AND LUMINESCENT CHARACTERISTICS OF AN OXIDE PHOSPHOR Gd3G a5O12:Ag. Acta Physica Sinica, 2000, 49(7): 1390-1393.doi:10.7498/aps.49.1390 |