[1] |
Chen Cui-Hong, Li Zhan-Kui, Wang Xiu-Hua, Li Rong-Hua, Fang Fang, Wang Zhu-Sheng, Li Hai-Xia.Development of high performance PIN-silicon detector and its application in radioactive beam physical experiment. Acta Physica Sinica, 2023, 72(12): 122902.doi:10.7498/aps.72.20230213 |
[2] |
Liu Cheng, Li Ming, Wen Zhang, Gu Zhao-Yuan, Yang Ming-Chao, Liu Wei-Hua, Han Chuan-Yu, Zhang Yong, Geng Li, Hao Yue.Establishment of composite leakage model and design of GaN Schottky barrier diode with stepped field plate. Acta Physica Sinica, 2022, 71(5): 057301.doi:10.7498/aps.71.20211917 |
[3] |
Deng Xiao-Qing, Deng Lian-Wen, He Yi-Ni, Liao Cong-Wei, Huang Sheng-Xiang, Luo Heng.Leakage current model of InGaZnO thin film transistor. Acta Physica Sinica, 2019, 68(5): 057302.doi:10.7498/aps.68.20182088 |
[4] |
She Yan-Chao, Zhang Wei-Xi, Wang Ying, Luo Kai-Wu, Jiang Xiao-Wei.Effect of oxygen vacancy defect on leakage current of PbTiO3 ferroelectric thin film. Acta Physica Sinica, 2018, 67(18): 187701.doi:10.7498/aps.67.20181130 |
[5] |
Lü Yi, Zhang He-Ming, Hu Hui-Yong, Yang Jin-Yong, Yin Shu-Juan, Zhou Chun-Yu.A Model of channel current for uniaxially strained Si NMOSFET. Acta Physica Sinica, 2015, 64(19): 197301.doi:10.7498/aps.64.197301 |
[6] |
Li Wei-Qin, Liu Ding, Zhang Hai-Bo.Leakage current characteristics of the insulating sample under high-energy electron irradiation. Acta Physica Sinica, 2014, 63(22): 227303.doi:10.7498/aps.63.227303 |
[7] |
Zhang Yan, Wang Zeng-Mei, Chen Yun-Fei, Guo Xin-Li, Sun Wei, Yuan Guo-Liang, Yin Jiang, Liu Zhi-Guo.Friction and wear performance of the 0.5Ba(Ti0.8Zr0.2)O3-0.5(Ba0.7Ca0.3)TiO3 piezoelectric film. Acta Physica Sinica, 2013, 62(6): 066802.doi:10.7498/aps.62.066802 |
[8] |
Ren Jian, Yan Da-Wei, Gu Xiao-Feng.Degradation mechanism of leakage current in AlGaN/GaN high electron mobility transistors. Acta Physica Sinica, 2013, 62(15): 157202.doi:10.7498/aps.62.157202 |
[9] |
Zhou Chun-Yu, Zhang He-Ming, Hu Hui-Yong, Zhuang Yi-Qi, Lü Yi, Wang Bin, Li Yu-Chen.Analytical modeling for drain current of strained Si NMOSFET. Acta Physica Sinica, 2013, 62(23): 237103.doi:10.7498/aps.62.237103 |
[10] |
Wen Juan-Hui, Yang Qiong, Cao Jue-Xian, Zhou Yi-Chun.Strain control of the leakage current of the ferroelectric thin films. Acta Physica Sinica, 2013, 62(6): 067701.doi:10.7498/aps.62.067701 |
[11] |
Chen Guo-Yun, Xin Yong, Huang Fu-Cheng, Wei Zhi-Yong, Lei Sheng-Jie, Huang San-Bo, Zhu Li, Zhao Jing-Wu, Ma Jia-Yi.Performances of a boron-lined ionization chamber used in neutron/-ray mixed field of reactors. Acta Physica Sinica, 2012, 61(8): 082901.doi:10.7498/aps.61.082901 |
[12] |
Mao Chao-Liang, Dong Xian-Lin, Wang Gen-Shui, Yao Chun-Hua, Cao Fei, Cao Sheng, Yang Li-Hui, Wang Yong-Ling.Grain size dependence of the dielectric properties of Ba0.70Sr0.30TiO3 ceramics and its mechanisms. Acta Physica Sinica, 2009, 58(8): 5784-5789.doi:10.7498/aps.58.5784 |
[13] |
Wang Xiu-Zhang, Liu Hong-Ri.Enhanced ferroelectricity of Pb(Zr0.5Ti0.5)O3 film by the introduction of La0.3Sr0.7TiO3 template layer. Acta Physica Sinica, 2007, 56(3): 1735-1740.doi:10.7498/aps.56.1735 |
[14] |
Tang Qiu-Wen, Shen Ming-Rong, Fang Liang.Comparison of temperature-dependent dielectric characteristic in two different (Ba,Sr)TiO3 films. Acta Physica Sinica, 2006, 55(3): 1346-1350.doi:10.7498/aps.55.1346 |
[15] |
Lu Xiao, Wu Chuan-Gui, Zhang Wan-Li, Li Yan-Rong.Dielectric breakdown of BST thin films prepared by RF sputtering. Acta Physica Sinica, 2006, 55(5): 2513-2517.doi:10.7498/aps.55.2513 |
[16] |
Jia Jian-Feng, Huang Kai, Pan Qing-Tao, He De-Yan.Structures and dielectric properties of (Ba0.7Sr0.3)TiO3/LaNiO3 hetero-structure films prepared by sol-gel technique. Acta Physica Sinica, 2005, 54(9): 4406-4410.doi:10.7498/aps.54.4406 |
[17] |
Zhou Xiao-Li, Du Pi-Yi.CaCu33Ti44O1212 films prepared by magnetron s puttering. Acta Physica Sinica, 2005, 54(4): 1809-1813.doi:10.7498/aps.54.1809 |
[18] |
Dong Zheng-Gao, Shen Ming-Rong, Xu Run, Gan Zhao-Qiang, Ge Shui-Bing.. Acta Physica Sinica, 2002, 51(12): 2896-2900.doi:10.7498/aps.51.2896 |
[19] |
LIU HONG-XIA, HAO YUE.STUDY ON STRESS INDEUCED LEAKAGE CURRENT TRANSIENT CHARACTERISTICS IN THIN GATE OXIDE. Acta Physica Sinica, 2001, 50(9): 1769-1773.doi:10.7498/aps.50.1769 |
[20] |
CHENG JIAN-GONG, MENG XIANG-JIAN, TANG JUN, GUO SHAO-LING, CHU JUN-HAO.STRUCTURE AND FERROELECTRICITY OF Ba0.8Sr0.2TiO3 THIN FILMS PREPARED BY A MODIFIED SOL-GEL PROCESSING. Acta Physica Sinica, 2000, 49(5): 1006-1009.doi:10.7498/aps.49.1006 |