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Li Han-Xi, Wang De-Zhen.Simulation of effect of thermionic emission on magnetized sheath near target plate of tungsten divertor. Acta Physica Sinica, 2023, 72(15): 159401.doi:10.7498/aps.72.20230276 |
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Liao Tian-Jun, Yang Zhi-Min, Lin Bi-Hong.Performance optimization of graphene thermionicdevices based on charge and heat transport. Acta Physica Sinica, 2021, 70(22): 227901.doi:10.7498/aps.70.20211110 |
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Hao Min-Ru, Hu Hui-Yong, Liao Chen-Guang, Wang Bin, Zhao Xiao-Hong, Kang Hai-Yang, Su Han, Zhang He-Ming.Influence of -ray total dose radiation effect on the tunneling gate current of the uniaxial strained Si nanometer n-channel metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2017, 66(7): 076101.doi:10.7498/aps.66.076101 |
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Liu Chang, Lu Ji-Wu, Wu Wang-Ran, Tang Xiao-Yu, Zhang Rui, Yu Wen-Jie, Wang Xi, Zhao Yi.Gate length dependence of hot carrier injection degradation in short channel silicon on insulator planar MOSFET. Acta Physica Sinica, 2015, 64(16): 167305.doi:10.7498/aps.64.167305 |
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Wu Hua-Ying, Zhang He-Ming, Song Jian-Jun, Hu Hui-Yong.An model of tunneling gate current for uniaxially strained Si nMOSFET. Acta Physica Sinica, 2011, 60(9): 097302.doi:10.7498/aps.60.097302 |
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Wu Tie-Feng, Zhang He-Ming, Wang Guan-Yu, Hu Hui-Yong.Gate tunneling current predicting model of strained Si for scaled metal-oxide semiconductor field effect transistor. Acta Physica Sinica, 2011, 60(2): 027305.doi:10.7498/aps.60.027305 |
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Luo Xiao-Guang, He Ji-Zhou.Rocked ratchet thermoelectric tunneling refrigerator. Acta Physica Sinica, 2011, 60(9): 090506.doi:10.7498/aps.60.090506 |
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Luan Su-Zhen, Liu Hong-Xia, Jia Ren-Xu.The dynamic reliability of ultra-thin gate oxide and its breakdown characteristics. Acta Physica Sinica, 2008, 57(4): 2524-2528.doi:10.7498/aps.57.2524 |
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Zhu Zhi-Wei, Hao Yue, Ma Xiao-Hua, Cao Yan-Rong, Liu Hong-Xia.Investigation of snapback stress induced gate oxide defect for NMOSFET’s in 90 nm technology. Acta Physica Sinica, 2007, 56(2): 1075-1081.doi:10.7498/aps.56.1075 |
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Xiang Yuan-Jiang, Wen Shuang-Chun, Tang Kang-Song.Photon tunneling in a frustrated-total-internal-reflection structure composed of a single negative material. Acta Physica Sinica, 2006, 55(6): 2714-2719.doi:10.7498/aps.55.2714 |
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Li Lei-Lei, Liu Hong-Xia, Yu Zong-Guang, Hao Yue.Degradation of tunnel oxide in E2PROM under constant current stress. Acta Physica Sinica, 2006, 55(5): 2459-2463.doi:10.7498/aps.55.2459 |
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Chen Wei-Bing, Xu Jing-Ping, Zou Xiao, Li Yan-Ping, Xu Sheng-Guo, Hu Zhi-Fu.Analytic tunneling-current model of small-scale MOSFETs. Acta Physica Sinica, 2006, 55(10): 5036-5040.doi:10.7498/aps.55.5036 |
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Ma Xiao-Hua, Hao Yue, Chen Hai-Feng, Cao Yan-Rong, Zhou Peng-Ju.The breakdown characteristics of ultra-thin gate oxide n-MOSFET under voltage stress. Acta Physica Sinica, 2006, 55(11): 6118-6122.doi:10.7498/aps.55.6118 |
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Wu Zhuo-Jie, Zhu Ka-Di, Yuan Xiao-Zhong, Zheng Hang.Influence of electron-phonon interaction on single electron tunneling in a quantum dot molecule. Acta Physica Sinica, 2005, 54(7): 3346-3350.doi:10.7498/aps.54.3346 |
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Liu Hong-Xia, Zheng Xue-Feng, Hao Yue.Generation mechanism of stress induced leakage current in flash memory cell. Acta Physica Sinica, 2005, 54(12): 5867-5871.doi:10.7498/aps.54.5867 |
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ZHANG JIN-CHENG, HAO YUE, ZHU ZHI-WEI.STUDY ON HIGH ELECTRIC FIELD ANNEALING EFFECT IN THIN GATE OXIDE OF MOS STRUCTURE. Acta Physica Sinica, 2001, 50(8): 1585-1589.doi:10.7498/aps.50.1585 |
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LIU HONG-XIA, FANG JIAN-PING, HAO YUE.EXPERIMENTAL ANALYSIS AND PHYSICAL MODEL INVESTIGATION OF TDDB OF THIN GATE OXIDE. Acta Physica Sinica, 2001, 50(6): 1172-1177.doi:10.7498/aps.50.1172 |
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ZHANG EN-QIU.HEORY OF THERMIONIC EMISSION (II)——ON THE MONOATOMIC LAYER AND DIPOLE THEORY. Acta Physica Sinica, 1974, 23(5): 53-63.doi:10.7498/aps.23.53 |
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ZHANG EN-QIU.THEORY OF THERMIONIC EMISSION (I)——A CRITICISM OF THE SEMI-CONDUCTOR MODEL OF THE OXIDE-COATED CATHODE. Acta Physica Sinica, 1974, 23(5): 43-52.doi:10.7498/aps.23.43 |
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