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Peng Ying-Zha, Zhang Kai, Zheng Bai-Lin.Analytical analysis of concentration distribution and diffusion-induced stress of finite-length cylindrical electrode under galvanostatic operation. Acta Physica Sinica, 2024, 73(15): 158201.doi:10.7498/aps.73.20231753 |
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Li Yan, Chen Xin-Li, Wang Wei-Sheng, Shi Zhi-Wen, Zhu Li-Qiang.Egg shell membrane based electrolyte gated oxide neuromorphic transistor. Acta Physica Sinica, 2023, 72(15): 157302.doi:10.7498/aps.72.20230411 |
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Zhao Wen-Jing, Ding Meng-Guang, Yang Xiao-Li, Hu Hai-Yun.Nonequilibrium statistical theoretical analysis method of TDDB of gate oxide. Acta Physica Sinica, 2020, 69(10): 100502.doi:10.7498/aps.69.20200108 |
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Deng Dong-Ge, Zuo Su, Wu Xin-Jun.A method of characterizing axial stress in ferromagnetic members using superficial magnetic flux density obtained from static magnetization by permanent magnet. Acta Physica Sinica, 2018, 67(17): 178103.doi:10.7498/aps.67.20180560 |
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Li Ping, Xu Yu-Tang.Monte Carlo simulation of time-dependent dielectric breakdown of oxide caused by migration of oxygen vacancies. Acta Physica Sinica, 2017, 66(21): 217701.doi:10.7498/aps.66.217701 |
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Ma Chao, Min Dao-Min, Li Sheng-Tao, Zheng Xu, Li Xi-Yu, Min Chao, Zhan Hai-Xia.Trap distribution and direct current breakdown characteristics in polypropylene/Al2O3 nanodielectrics. Acta Physica Sinica, 2017, 66(6): 067701.doi:10.7498/aps.66.067701 |
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Yang Shuai, Tang Xiao-Yan, Zhang Yu-Ming, Song Qing-Wen, Zhang Yi-Men.Influence of charge imbalance on breakdown voltage of 4H-SiC semi-superjunction VDMOSFET. Acta Physica Sinica, 2014, 63(20): 208501.doi:10.7498/aps.63.208501 |
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Zhao Min, An Zhen-Lian, Yao Jun-Lan, Xie Chen, Xia Zhong-Fu.Trap capture properties of space charge and void breakdown charge in a cellular polypropylene electret film. Acta Physica Sinica, 2009, 58(1): 482-487.doi:10.7498/aps.58.482 |
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Yang Qiang, An Zhen-Lian, Zheng Fei-Hu, Zhang Ye-Wen.The relationship between energy distribution and space distribution of charge traps in linear low density polyethylene. Acta Physica Sinica, 2008, 57(6): 3834-3839.doi:10.7498/aps.57.3834 |
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Luan Su-Zhen, Liu Hong-Xia, Jia Ren-Xu.The dynamic reliability of ultra-thin gate oxide and its breakdown characteristics. Acta Physica Sinica, 2008, 57(4): 2524-2528.doi:10.7498/aps.57.2524 |
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Zhu Zhi-Wei, Hao Yue, Ma Xiao-Hua, Cao Yan-Rong, Liu Hong-Xia.Investigation of snapback stress induced gate oxide defect for NMOSFET’s in 90 nm technology. Acta Physica Sinica, 2007, 56(2): 1075-1081.doi:10.7498/aps.56.1075 |
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Li Lei-Lei, Liu Hong-Xia, Yu Zong-Guang, Hao Yue.Degradation of tunnel oxide in E2PROM under constant current stress. Acta Physica Sinica, 2006, 55(5): 2459-2463.doi:10.7498/aps.55.2459 |
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Ma Xiao-Hua, Hao Yue, Chen Hai-Feng, Cao Yan-Rong, Zhou Peng-Ju.The breakdown characteristics of ultra-thin gate oxide n-MOSFET under voltage stress. Acta Physica Sinica, 2006, 55(11): 6118-6122.doi:10.7498/aps.55.6118 |
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