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Zhao Wen-Jing, Ding Meng-Guang, Yang Xiao-Li, Hu Hai-Yun.Nonequilibrium statistical theoretical analysis method of TDDB of gate oxide. Acta Physica Sinica, 2020, 69(10): 100502.doi:10.7498/aps.69.20200108 |
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Li Ping, Xu Yu-Tang.Monte Carlo simulation of time-dependent dielectric breakdown of oxide caused by migration of oxygen vacancies. Acta Physica Sinica, 2017, 66(21): 217701.doi:10.7498/aps.66.217701 |
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He Shu-Kai, Liu Dong-Xiao, Jiao Jin-Long, Deng Zhi-Gang, Teng Jian, Zhang Zhi-Meng, Hong Wei, Gu Yu-Qiu.Charged paricle activation analysis for characterizing parameters of laser-accelerated protons. Acta Physica Sinica, 2017, 66(20): 205201.doi:10.7498/aps.66.205201 |
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Zhao Hu, Li Tie-Fu, Liu Qi-Chun, Zhang Ying-Shan, Liu Jian-She, Chen Wei.Decoherence characterization of three-dimensional transmon. Acta Physica Sinica, 2014, 63(22): 220305.doi:10.7498/aps.63.220305 |
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Han Wen-Peng, Shi Yan-Meng, Li Xiao-Li, Luo Shi-Qiang, Lu Yan, Tan Ping-Heng.The numerical-aperture-dependent optical contrast and thickness determination of ultrathin flakes of two-dimensional atomic crystals: A case of graphene multilayers. Acta Physica Sinica, 2013, 62(11): 110702.doi:10.7498/aps.62.110702 |
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Li Shi-Wen, Feng Guo-Ying, Li Wei, Han Jing-Hua, Zhou Sheng-Yang, Yin Jia-Jia, Yang Chao, Zhou Shou-Huan.Study on phase analysis of nanoparticles by high-voltage electrical explosion method of copper wire. Acta Physica Sinica, 2012, 61(22): 225206.doi:10.7498/aps.61.225206 |
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Luo Zhe-Xian, Yu Hui, Ping Fan, Ma Ge-Lan.Vortex axial-symmetrization characterized by fractal dimension. Acta Physica Sinica, 2012, 61(24): 244702.doi:10.7498/aps.61.244702 |
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Xu Lu-Jia, Hu Ming, Yang Hai-Bo, Yang Meng-Lin, Zhang Jie.Study on thermal conductivity of porous silicon thermal isolation layer based on micro-structure mathematical model. Acta Physica Sinica, 2010, 59(12): 8794-8800.doi:10.7498/aps.59.8794 |
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Hua Shao-Chun, Wang Han-Gong, Wang Liu-Ying, Zhang Wu, Liu Gu.The adhesives strength of nanostructured AT13 ceramic coatings characterized by fractal dimension. Acta Physica Sinica, 2008, 57(2): 1241-1245.doi:10.7498/aps.57.1241 |
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Luan Su-Zhen, Liu Hong-Xia, Jia Ren-Xu.The dynamic reliability of ultra-thin gate oxide and its breakdown characteristics. Acta Physica Sinica, 2008, 57(4): 2524-2528.doi:10.7498/aps.57.2524 |
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Ma Xiao-Hua, Hao Yue, Chen Hai-Feng, Cao Yan-Rong, Zhou Peng-Ju.The breakdown characteristics of ultra-thin gate oxide n-MOSFET under voltage stress. Acta Physica Sinica, 2006, 55(11): 6118-6122.doi:10.7498/aps.55.6118 |
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Wang Yan-Gang, Xu Ming-Zhen, Tan Chang-Hua, Duan Xiao-Rong.Conduction mechanism of ultra-thin gate oxide n-MOSFET after soft breakdown. Acta Physica Sinica, 2005, 54(8): 3884-3888.doi:10.7498/aps.54.3884 |
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Ma Zhong-Fa, Zhuang Yi-Qi, Du Lei, Bao Jun-Lin, Li Wei-Hua.A physical-based percolation model for gate oxide TDDB. Acta Physica Sinica, 2003, 52(8): 2046-2051.doi:10.7498/aps.52.2046 |
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Liu Hong-Xia, Zheng Xue-Feng, Hao Yao.. Acta Physica Sinica, 2002, 51(1): 163-166.doi:10.7498/aps.51.163 |
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ZHANG JIN-CHENG, HAO YUE, ZHU ZHI-WEI.STUDY ON HIGH ELECTRIC FIELD ANNEALING EFFECT IN THIN GATE OXIDE OF MOS STRUCTURE. Acta Physica Sinica, 2001, 50(8): 1585-1589.doi:10.7498/aps.50.1585 |
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LIU HONG-XIA, HAO YUE.STUDY ON STRESS INDEUCED LEAKAGE CURRENT TRANSIENT CHARACTERISTICS IN THIN GATE OXIDE. Acta Physica Sinica, 2001, 50(9): 1769-1773.doi:10.7498/aps.50.1769 |
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LIU HONG-XIA, FANG JIAN-PING, HAO YUE.EXPERIMENTAL ANALYSIS AND PHYSICAL MODEL INVESTIGATION OF TDDB OF THIN GATE OXIDE. Acta Physica Sinica, 2001, 50(6): 1172-1177.doi:10.7498/aps.50.1172 |
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