| [1] |
Peng Ying-Zha, Zhang Kai, Zheng Bai-Lin.Analytical analysis of concentration distribution and diffusion-induced stress of finite-length cylindrical electrode under galvanostatic operation. Acta Physica Sinica, 2024, 73(15): 158201.doi:10.7498/aps.73.20231753 |
| [2] |
Wang Bo, Li Yu-Dong, Guo Qi, Liu Chang-Ju, Wen Lin, Ren Di-Yuan, Zeng Jun-Zhe, Ma Li-Ya.Dark signal degradation in proton-irradiated complementary metal oxide semiconductor active pixel sensor. Acta Physica Sinica, 2015, 64(8): 084209.doi:10.7498/aps.64.084209 |
| [3] |
Liu Chang, Lu Ji-Wu, Wu Wang-Ran, Tang Xiao-Yu, Zhang Rui, Yu Wen-Jie, Wang Xi, Zhao Yi.Gate length dependence of hot carrier injection degradation in short channel silicon on insulator planar MOSFET. Acta Physica Sinica, 2015, 64(16): 167305.doi:10.7498/aps.64.167305 |
| [4] |
Shi Lei, Feng Shi-Wei, Shi Bang-Bing, Yan Xin, Zhang Ya-Min.Degradation induced by voltage and current for AlGaN/GaN high-electron mobility transistor under on-state stress. Acta Physica Sinica, 2015, 64(12): 127303.doi:10.7498/aps.64.127303 |
| [5] |
Nan Yi-Bing, Tang Yi, Zhang Li-Jun, Chang Yue-E, Chen Ting-Ai.A sectioned method to correct spectral imaging data degraded by satellite vibrations. Acta Physica Sinica, 2014, 63(1): 010701.doi:10.7498/aps.63.010701 |
| [6] |
You Hai-Long, Lan Jian-Chun, Fan Ju-Ping, Jia Xin-Zhang, Zha Wei.Research on characteristics degradation of n-metal-oxide-semiconductor field-effect transistor induced by hot carrier effect due to high power microwave. Acta Physica Sinica, 2012, 61(10): 108501.doi:10.7498/aps.61.108501 |
| [7] |
Sun Peng, Du Lei, Chen Wen-Hao, He Liang.A latent defect degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation1/f noise. Acta Physica Sinica, 2012, 61(6): 067801.doi:10.7498/aps.61.067801 |
| [8] |
Tang Qiu-Yan, Tang Yi, Cao Wei-Liang, Wang Jing, Nan Yi-Bing, Ni Guo-Qiang.Simulation of imaging spectrometers degraded by satellite vibrations. Acta Physica Sinica, 2012, 61(7): 070202.doi:10.7498/aps.61.070202 |
| [9] |
Guo Chun-Sheng, Wan Ning, Ma Wei-Dong, Xiong Cong, Zhang Guang-Chen, Feng Shi-Wei.Online degradation model based on process-stress accelerated test. Acta Physica Sinica, 2011, 60(12): 128501.doi:10.7498/aps.60.128501 |
| [10] |
Luo Zhen-Fei, Wu Zhi-Ming, Xu Xiang-Dong, Wang Tao, Jiang Ya-Dong.Aging in the electrical properties of nanostructured vanadium oxide thin film exposed to air. Acta Physica Sinica, 2011, 60(6): 067302.doi:10.7498/aps.60.067302 |
| [11] |
Gu Wen-Ping, Hao Yue, Zhang Jin-Cheng, Wang Chong, Feng Qian, Ma Xiao-Hua.Degradation under high-field stress and gate stress of AlGaN/GaN HEMTs. Acta Physica Sinica, 2009, 58(1): 511-517.doi:10.7498/aps.58.511 |
| [12] |
Shen Zi-Cai, Kong Wei-Jin, Feng Wei-Quan, Ding Yi-Gang, Liu Yu-Ming, Zheng Hui-Qi, Zhao Xue, Zhao Chun-Qing.Degradation model of the optical properties of the thermal control coatings. Acta Physica Sinica, 2009, 58(2): 860-864.doi:10.7498/aps.58.860 |
| [13] |
Peng Shao-Quan, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, He Liang, Chen Wei-Hua.Radiation degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation 1/f noise. Acta Physica Sinica, 2008, 57(8): 5205-5211.doi:10.7498/aps.57.5205 |
| [14] |
Liu Yu-An, Du Lei, Bao Jun-Lin.Research on correlation of 1/fγ noise and hot carrier degradation in metal oxide semiconductor field effect transistor. Acta Physica Sinica, 2008, 57(4): 2468-2475.doi:10.7498/aps.57.2468 |
| [15] |
Chen Hai-Feng, Hao Yue, Ma Xiao-Hua, Tang Yu, Meng Zhi-Qin, Cao Yan-Rong, Zhou Peng-Ju.Characteristics of degradation under GIDL stress in ultrathin gate oxide LDD nMOSFET’s. Acta Physica Sinica, 2007, 56(3): 1662-1667.doi:10.7498/aps.56.1662 |
| [16] |
Ma Xiao-Hua, Hao Yue, Chen Hai-Feng, Cao Yan-Rong, Zhou Peng-Ju.The breakdown characteristics of ultra-thin gate oxide n-MOSFET under voltage stress. Acta Physica Sinica, 2006, 55(11): 6118-6122.doi:10.7498/aps.55.6118 |
| [17] |
Feng Yu-Qing, Hou Li-Na, Zhu Tao, Yao Shu-De, Zhan Wen-Shan.Thermal stability of the magnetic tunnel junctions with nano-oxide layers. Acta Physica Sinica, 2005, 54(9): 4340-4344.doi:10.7498/aps.54.4340 |
| [18] |
Liu Hong-Xia, Zheng Xue-Feng, Hao Yao.. Acta Physica Sinica, 2002, 51(1): 163-166.doi:10.7498/aps.51.163 |
| [19] |
LIU HONG-XIA, HAO YUE.STUDY ON STRESS INDEUCED LEAKAGE CURRENT TRANSIENT CHARACTERISTICS IN THIN GATE OXIDE. Acta Physica Sinica, 2001, 50(9): 1769-1773.doi:10.7498/aps.50.1769 |
| [20] |
FAN HAI-FU, QIAN JIN-ZI.PROCEDURE FOR SOLVING THE PROBLEM OF PHASE DEGENERATION RESULTING FROM DIRECT METHODS. Acta Physica Sinica, 1981, 30(5): 594-601.doi:10.7498/aps.30.594 |
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