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Liu Ju, Cao Yi-Wei, Lv Quan-Jiang, Yang Tian-Peng, Mi Ting-Ting, Wang Xiao-Wen, Liu Jun-Lin.Influence of period number of superlattice electron barrier layer on the performance of AlGaN-based deep ultraviolet LED. Acta Physica Sinica, 2024, 73(12): 128503.doi:10.7498/aps.73.20231969 |
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Wu Xiao-Xu, Long Jun-Hua, Sun Qiang-Jian, Wang Xia, Chen Zhi-Tao, Yu Meng-Lu, Luo Xiao-Long, Li Xue-Fei, Zhao Hu-Yin, Lu Shu-Long.Study of flexible packing and stability of GaInP/GaAs solar cells. Acta Physica Sinica, 2023, 72(13): 138803.doi:10.7498/aps.72.20230352 |
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Shen Jian-Xin, Shang Da-Shan, Sun Young.Fundamental circuit element and nonvolatile memory based on magnetoelectric effect. Acta Physica Sinica, 2018, 67(12): 127501.doi:10.7498/aps.67.20180712 |
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Fu Min, Wen Shang-Sheng, Xia Yun-Yun, Xiang Chang-Ming, Ma Bing-Xu, Fang Fang.Failure analysis of GaN-based Light-emitting diode with hole vertical structure. Acta Physica Sinica, 2017, 66(4): 048501.doi:10.7498/aps.66.048501 |
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Zhang Li-Rong, Ma Xue-Xue, Wang Chun-Fu, Li Guan-Ming, Xia Xing-Heng, Luo Dong-Xiang, Wu Wei-Jing, Xu Miao, Wang Lei, Peng Jun-Biao.High speed gate driver circuit basd on metal oxide thin film transistors. Acta Physica Sinica, 2016, 65(2): 028501.doi:10.7498/aps.65.028501 |
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Zhou Hang, Cui Jiang-Wei, Zheng Qi-Wen, Guo Qi, Ren Di-Yuan, Yu Xue-Feng.Reliability of partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistor under the ionizing radiation environment. Acta Physica Sinica, 2015, 64(8): 086101.doi:10.7498/aps.64.086101 |
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Li Ri, Wang Jian, Zhou Li-Ming, Pan Hong.The reliability analysis of using the volume averaging method to simulate the solidification process in a ingot. Acta Physica Sinica, 2014, 63(12): 128103.doi:10.7498/aps.63.128103 |
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Chai Yu-Hua, Guo Yu-Xiu, Bian Wei, Li Wen, Yang Tao, Yi Ming-Dong, Fan Qu-Li, Xie Ling-Hai, Huang Wei.Progress of flexible organic non-volatile memory field-effect transistors. Acta Physica Sinica, 2014, 63(2): 027302.doi:10.7498/aps.63.027302 |
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Wang Xin-Hua, Wang Jian-Hui, Pang Lei, Chen Xiao-Juan, Yuan Ting-Ting, Luo Wei-Jun, Liu Xin-Yu.Reliability of SiN-based MIM capacitors in GaN MMIC. Acta Physica Sinica, 2012, 61(17): 177302.doi:10.7498/aps.61.177302 |
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Song Wei-Cai, Zhang Yong-Jin.Reliability of multi-state and multi-subsystem below stress-strength interference. Acta Physica Sinica, 2011, 60(2): 021201.doi:10.7498/aps.60.021201 |
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Zhou Wen, Liu Hong-Xia.Quantitative analysis on median-time-to-fail of copper interconnect with lose object defects. Acta Physica Sinica, 2009, 58(11): 7716-7721.doi:10.7498/aps.58.7716 |
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Zhang Yong-Jin, Wang Zhong-Zhi.Cumulative damage model and parameter estimate about a kind of time-sharing redundant system. Acta Physica Sinica, 2009, 58(9): 6074-6079.doi:10.7498/aps.58.6074 |
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Zhang Yi-Min, Zhang Xu-Fang.Reliability analysis of double random Duffing system. Acta Physica Sinica, 2008, 57(7): 3989-3995.doi:10.7498/aps.57.3989 |
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Luan Su-Zhen, Liu Hong-Xia, Jia Ren-Xu.The dynamic reliability of ultra-thin gate oxide and its breakdown characteristics. Acta Physica Sinica, 2008, 57(4): 2524-2528.doi:10.7498/aps.57.2524 |
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Wang Jun, Wang Lei, Dong Ye-Min, Zou Xin, Shao Li, Li Wen-Jun, Steve Yang.Mechanism and impact of the double-hump substrate current in high-voltage double diffused drain MOS transistors. Acta Physica Sinica, 2008, 57(7): 4492-4496.doi:10.7498/aps.57.4492 |
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Xie Guo-Feng, He Xu-Hong, Tong Jie-Juan, Zheng Yan-Hua.Calculating physical failure probability of HTR-10’s residual heat removal system by response surface method. Acta Physica Sinica, 2007, 56(6): 3192-3197.doi:10.7498/aps.56.3192 |
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Hu Jin, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, Zhou Jiang.Noise as a representation for reliability of light emitting diode. Acta Physica Sinica, 2006, 55(3): 1384-1389.doi:10.7498/aps.55.1384 |
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Zhao Yi, Wan Xing-Gong.Substrate and process dependence of gate oxide reliability of 0.18μm dual gate CMOS process. Acta Physica Sinica, 2006, 55(6): 3003-3006.doi:10.7498/aps.55.3003 |
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