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Abstract

Flexible organic non-volatile memory field-effect transistors (ONVMFETs) are promising candidates in the field of flexible organic electronic devices, which can be used in flexible radio frequency tags, memories, integrated circuits and large-area displays, because of their remarkable advantages such as flexibility, lightweight, low cost and large-area organic electronics. On the basis of the introduction of the development of flexible ONVMFETs in terms of substrates, structures and characteristics, the classification of flexible ONVMFETs is summarized. Meanwhile, we discuss the effects of mechanical stress and temperature on the performance of flexible ONVMFET. Finally, some prospects as well as the challenges are pointed out.

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Funds:Project supported by the National Basic Research Program of China (Grant Nos. 2009CB930600, 2012CB723402), the National Natural Science Foundation of China (Grant Nos. 61204095, 60876010, 61136003, 51173081, 21274064), the National Science Foundation for Post-Doctoral Scientists of China (Grant No. 20070410883), the Key Project of Chinese Ministry of Education, China (Grant No. 20113223120003), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK2012431), the Natural Science Foundation of Heilongjiang Province, China (Grant No. ZD201303), the Heilongjiang Planned Projects for Postdoctoral Research Funds, China (Grant No. BH-Z07233), the Natural Science Foundation of Jiangsu Province, China (Grant No. ZD201303), the Natural Science Foundation of the Education Committee of Jiangsu Province, China (Grant No. 11KJB510017), and the Scientific Research Staring Foundation of Nanjing University of Posts and Telecommunications, China (Grants No. NY211022).

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Vol. 63, Issue 2 - 2014-01-20

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