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Fan Jin-Ze, Fang Zhan-Bo, Luo Chao-Jie, Zhang Hui.Charge density waves in low-dimensional material. Acta Physica Sinica, 2022, 71(12): 127103.doi:10.7498/aps.71.20220052 |
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Luo Xiao-Dong, Di Guo-Qing.Ge and Nb co-doped TiO2 films with narrow band gap and low resistivity prepared by sputtering. Acta Physica Sinica, 2012, 61(20): 206803.doi:10.7498/aps.61.206803 |
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Lei Jie-Mei, Lü Liu, Liu Ling, Xu Xiao-Liang.Preparation and characterization of magnetic nanoparticles of Fe3O4 coated with mesoporous SiO2. Acta Physica Sinica, 2011, 60(1): 017501.doi:10.7498/aps.60.017501 |
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Zhou Hong-Juan, Zhen Cong-Mian, Zhang Yong-Jin, Zhao Cui-Lian, Ma Li, Hou Deng-Lu.Preparation and magnetism of the N doped SiO2 thin film. Acta Physica Sinica, 2010, 59(5): 3499-3503.doi:10.7498/aps.59.3499 |
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Chen Xue-Feng, Qi Kai-Tian, Li Bing, Sheng Yong, Zhang Yan, Yang Chuan-Lu.Density functional theory study of silica clusters (SiO2)n-(n≤7). Acta Physica Sinica, 2010, 59(7): 4598-4601.doi:10.7498/aps.59.4598 |
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Ma Bao-Hong, Li Yan, Wang Cheng-Wei, Wang Jian, Chen Jian-Biao, Liu Wei-Min.Investigation of the UV absorption of porous TiO2/Al/SiO2 nanostructures. Acta Physica Sinica, 2008, 57(1): 586-591.doi:10.7498/aps.57.586 |
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Zhao Wen-Ji, Kong Ming, Huang Bi-Long, Li Ge-Yang.Effect of SiO2 crystallization on AlN/SiO2 nano-multilayers with superhardness effect. Acta Physica Sinica, 2007, 56(3): 1574-1580.doi:10.7498/aps.56.1574 |
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Wei Yong-Xia, Qian Xiao-Mei, Yu Xiao-Zhu, Ye Chao, Ning Zhao-Yuan, Liang Rong-Qing.Effect of O2-doping on bonding configuration and electric properties of SiCOH films prepared by decamethylcyclopentasiloxane electron cyclotron resonance plasma. Acta Physica Sinica, 2007, 56(2): 1172-1176.doi:10.7498/aps.56.1172 |
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He Zhi-Wei, Zhen Cong-Mian, Lan Wei, Wang Yin-Yue.Deposition of nanoporous silica thin films by sol-gel. Acta Physica Sinica, 2003, 52(12): 3130-3134.doi:10.7498/aps.52.3130 |
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Wang Ji-Suo, Feng Jian, Liu Tang-Kun, Zhan Ming-Sheng.. Acta Physica Sinica, 2002, 51(9): 1983-1988.doi:10.7498/aps.51.1983 |
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CHEN KAI-MAO, JIN SI-XUAN, WU LAN-QING, ZENG SHU-RONG, LIU HONG-FEI.INTERFACE STATES AND DEEP CENTERS IN Au-DOPED MOS STRUCTURES. Acta Physica Sinica, 1993, 42(8): 1324-1332.doi:10.7498/aps.42.1324 |
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CHEN KAI-MAO, WU LAN-QING, PENG QING-ZHI, LIU HONG-FEI.DEEP LEVEL IN BOTH Si/SiO2 INTERFACE AND ITS NEIGH-BOURHOOD AND Si/SiO2 INTERFACE STATES IN p TYPE SILICON MOS STRUCTURE. Acta Physica Sinica, 1992, 41(11): 1870-1879.doi:10.7498/aps.41.1870 |
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ZHU MEI-FANG, XU ZHENG-YI.AN INVESTIGATION OF DENSITY OF GAP STATES IN AMORPHOUS SEMICONDUCTORS BY THERMOSTI-MULATED CONDUCTIVITY SPECTRA. Acta Physica Sinica, 1989, 38(12): 1988-1995.doi:10.7498/aps.38.1988 |
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HSU PEI-WEI, KUNG FAN-MEI, KUNG HSUCH-HUI.K-K RESONANCE. Acta Physica Sinica, 1964, 20(11): 1129-1134.doi:10.7498/aps.20.1129 |
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