[1] |
Yan Shao-Qi, Gao Ji-Kun, Chen Yue, Ma Yao, Zhu Xiao-Dong.Low-density plasmas generated by electron beams passing through silicon nitride window. Acta Physica Sinica, 2024, 73(14): 144102.doi:10.7498/aps.73.20240302 |
[2] |
Song Liu-Qin, Jia Wen-Zhu, Dong Wan, Zhang Yi-Fan, Dai Zhong-Ling, Song Yuan-Hong.Numerical investigation of SiO2film deposition enhanced by capacitively coupled discharge plasma. Acta Physica Sinica, 2022, 71(17): 170201.doi:10.7498/aps.71.20220493 |
[3] |
Wang Meng, Ou Yun-Bo, Li Fang-Sen, Zhang Wen-Hao, Tang Chen-Jia, Wang Li-Li, Xue Qi-Kun, Ma Xu-Cun.Molecular beam epitaxy of single unit-cell FeSe superconducting films on SrTiO3(001). Acta Physica Sinica, 2014, 63(2): 027401.doi:10.7498/aps.63.027401 |
[4] |
Wei Pang, Li Kang, Feng Xiao, Ou Yun-Bo, Zhang Li-Guo, Wang Li-Li, He Ke, Ma Xu-Cun, Xue Qi-Kun.Growth of micro-devices of topological insulator thin films by molecular beam epitaxy on substrates pre-patterned with photolithography. Acta Physica Sinica, 2014, 63(2): 027303.doi:10.7498/aps.63.027303 |
[5] |
Nie Shuai-Hua, Zhu Li-Jun, Pan Dong, Lu Jun, Zhao Jian-Hua.Structural characterization and magnetic properties of perpendicularly magnetized MnAl films grown by molecular-beam epitaxy. Acta Physica Sinica, 2013, 62(17): 178103.doi:10.7498/aps.62.178103 |
[6] |
Wu Yuan-Yuan, Zheng Xin-He, Wang Hai-Xiao, Gan Xing-Yuan, Wen Yu, Wang Nai-Ming, Wang Jian-Feng, Yang Hui.High-quality InGaN epilayers grown by PA-MBE and abnormal incorporation behavior of Indium into InGaN. Acta Physica Sinica, 2013, 62(8): 086101.doi:10.7498/aps.62.086101 |
[7] |
Hu Yi-Bin, Hao Zhi-Biao, Hu Jian-Nan, Niu Lang, Wang Lai, Luo Yi.Studies on the composition of InGaN/AlN quantum dots grown by molecular beam epitaxy. Acta Physica Sinica, 2012, 61(23): 237804.doi:10.7498/aps.61.237804 |
[8] |
Zhang Bing-Po, Cai Chun-Feng, Cai Xi-Kun, Wu Hui-Zhen, Wang Miao.Study of growth of [111]-oriented CdTe thin films by MBE. Acta Physica Sinica, 2012, 61(4): 046802.doi:10.7498/aps.61.046802 |
[9] |
Su Shao-Jian, Wang Wei, Zhang Guang-Ze, Hu Wei-Xuan, Bai An-Qi, Xue Chun-Lai, Zuo Yu-Hua, Cheng Bu-Wen, Wang Qi-Ming.Epitaxial growth of Ge0.975Sn0.025alloy films on Si(001) substrates by molecular beam epitaxy. Acta Physica Sinica, 2011, 60(2): 028101.doi:10.7498/aps.60.028101 |
[10] |
Zhang Yan-Hui, Chen Ping-Ping, Li Tian-Xin, Yin Hao.InNSb single crystal films prepared on GaAs (001) substrates by molecular beam epitaxy. Acta Physica Sinica, 2010, 59(11): 8026-8030.doi:10.7498/aps.59.8026 |
[11] |
He Meng, Liu Guo-Zhen, Qiu Jie, Xing Jie, Lü Hui-Bin.Epitaxial growth of high quality TiN thin film on Si by laser molecular beam epitaxy. Acta Physica Sinica, 2008, 57(2): 1236-1240.doi:10.7498/aps.57.1236 |
[12] |
Liu Feng, Meng Yue-Dong, Ren Zhao-Xing, Shu Xing-Sheng.Characterization of ZrN films deposited by ICP enhanced RF magnetron sputtering. Acta Physica Sinica, 2008, 57(3): 1796-1801.doi:10.7498/aps.57.1796 |
[13] |
Yan Feng-Ping, Zheng Kai, Wang Lin, Li Yi-Fan, Gong Tao-Rong, Jian Shui-Sheng, K. Ogata, K. Koike, S. Sasa, M. Inoue, M. Yano.Measurement of thickness and refractive index of Zn1-xMgxO film grown on sapphire substrate by molecular beam epitaxy. Acta Physica Sinica, 2007, 56(7): 4127-4131.doi:10.7498/aps.56.4127 |
[14] |
Cao Chun-Fang, Wu Hui-Zhen, Si Jian-Xiao, Xu Tian-Ning, Chen Jing, Shen Wen-Zhong.Abnormal Raman spectra of PbTe crystalline thin films grown by molecular beam epitaxy. Acta Physica Sinica, 2006, 55(4): 2021-2026.doi:10.7498/aps.55.2021 |
[15] |
Wang Chong, Chen Ping-Ping, Liu Zhao-Lin, Li Tian-Xin, Xia Chang-Sheng, Chen Xiao-Shuang, Lu Wei.Study of the modulated spectra of dilute GaNxAs1-x (x≤0.03) thin films. Acta Physica Sinica, 2006, 55(7): 3636-3641.doi:10.7498/aps.55.3636 |
[16] |
Wang Xiao-Qiang, Li Jun-Shuai, Chen Qiang, Qi Jing, Yin Min, He De-Yan.Aluminum-induced crystallization during deposition of silicon films by inductively coupled plasma CVD. Acta Physica Sinica, 2005, 54(1): 269-273.doi:10.7498/aps.54.269 |
[17] |
Wang Qing-Xue, Yang Jian-Rong, Sun Tao, Wei Yan-Feng, Fang Wei-Zheng, He Li.Relationship between lattice parameters and compositions of molecular beam epitaxial Hg1-xCdxTe films. Acta Physica Sinica, 2005, 54(8): 3726-3733.doi:10.7498/aps.54.3726 |
[18] |
Wang Zhuang-Bing, Xu Xiao-Liang, Chen Ying-Ying, Zhou Shi-Ming, Kong Ning, Guo Jia, Liu Hong-Tu, Shi Chao-Shu.Characteristics of the ZnxMg1-xO fil ms grown by electrophoresis method. Acta Physica Sinica, 2004, 53(11): 3924-3928.doi:10.7498/aps.53.3924 |
[19] |
YI XIN-JIAN, LI YI, HAO JIAN-HUA, ZHANG XIN-YU, G.K.WONG.THIN FILMS OF Sb GROWN BY MOLECULAR BEAM EPITAXY AND THE QUANTUM SIZE EFFECT. Acta Physica Sinica, 1998, 47(11): 1896-1899.doi:10.7498/aps.47.1896 |
[20] |
ZHOU GUO-LIANG, CHEN KE-MING, TIAN LIANG-GUANG.LOW TEMPERATURE GROWTH OF THIN Ge FILM ON Si SUBSTRATES BY MOLECULAR BEAM EPITAXY. Acta Physica Sinica, 1988, 37(10): 1607-1612.doi:10.7498/aps.37.1607 |