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Zhou Xiao-Hong, Yang Qing, Zou Jun-Tao, Liang Shu-Hua.Effects of growth conditions on the microstructures and photoluminescence properties of Ga-doped ZnO films. Acta Physica Sinica, 2015, 64(8): 087803.doi:10.7498/aps.64.087803 |
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Wu Yan-Nan, Xu Ming, Wu Ding-Cai, Dong Cheng-Jun, Zhang Pei-Pei, Ji Hong-Xuan, He Lin.Effects of Co and/or Sn doping on crystal structures and optical properties of ZnO thin films. Acta Physica Sinica, 2011, 60(7): 077505.doi:10.7498/aps.60.077505 |
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Xie Jing, Li Bing, Li Yuan-Jie, Yan Pu, Feng Liang-Huan, Cai Ya-Ping, Zheng Jia-Gui, Zhang Jing-Quan, Li Wei, Wu Li-Li, Lei Zhi, Zeng Guang-Gen.Study of ZnS thin films prepared by RF magnetron sputtering technique. Acta Physica Sinica, 2010, 59(8): 5749-5754.doi:10.7498/aps.59.5749 |
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Gao Li, Zhang Jian-Min.Photoluminescence of diluted Mg doped ZnO thin films and band-gap change mechanisms. Acta Physica Sinica, 2010, 59(2): 1263-1267.doi:10.7498/aps.59.1263 |
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Wu Ding-Cai, Hu Zhi-Gang, Duan Man-Yi, Xu Lu-Xiang, Liu Fang-Shu, Dong Cheng-Jun, Wu Yan-Nan, Ji Hong-Xuan, Xu Ming.Synthesis and photoluminescence of (Co, Cu)-doped ZnO thin films. Acta Physica Sinica, 2009, 58(10): 7261-7266.doi:10.7498/aps.58.7261 |
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Li Yang-Ping, Liu Zheng-Tang.Plasma emission diagnostics for the optimization of deposition parameters in RF magnetron sputtering of GaP film. Acta Physica Sinica, 2009, 58(7): 5022-5028.doi:10.7498/aps.58.5022 |
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Yu Wei, Li Ya-Chao, Ding Wen-Ge, Zhang Jiang-Yong, Yang Yan-Bin, Fu Guang-Sheng.Bonding configurations and photoluminescence of amorphous Si nanoparticles in SiNx films. Acta Physica Sinica, 2008, 57(6): 3661-3665.doi:10.7498/aps.57.3661 |
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Pan Xiao-Jun, Zhang Zhen-Xing, Wang Tao, Li Hui, Xie Er-Qing.Room temperature visible photoluminescence from nanocrystalline GaN∶Er film prepared by sputtering. Acta Physica Sinica, 2008, 57(6): 3786-3790.doi:10.7498/aps.57.3786 |
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Li Yang-Ping, Liu Zheng-Tang, Liu Wen-Ting, Yan Feng, Chen Jing.Preparation and properties of GeC thin films deposited by reactive RF magnetron sputtering. Acta Physica Sinica, 2008, 57(10): 6587-6592.doi:10.7498/aps.57.6587 |
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Wang Zhen-Ning, Jiang Mei-Fu, Ning Zhao-Yuan, Zhu Li.Structure and photoluminescence of Zn2GeO4 polycrystalline films prepared by radio-frequency magnetron sputtering. Acta Physica Sinica, 2008, 57(10): 6507-6512.doi:10.7498/aps.57.6507 |
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Li Yang-Ping, Liu Zheng-Tang, Zhao Hai-Long, Liu Wen-Ting, Yan Feng.RF magnetron sputtering of GaP thin film and computer simulation of its depositing process. Acta Physica Sinica, 2007, 56(5): 2937-2944.doi:10.7498/aps.56.2937 |
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Wang Ying-Long, Lu Li-Fang, Yan Chang-Yu, Chu Li-Zhi, Zhou Yang, Fu Guang-Sheng, Peng Ying-Cai.The laser ablated deposition of Si nanocrystalline film with narrow photoluminescence peak. Acta Physica Sinica, 2005, 54(12): 5738-5742.doi:10.7498/aps.54.5738 |
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Zhang Xi-Jian, Ma Hong-Lei, Wang Qing-Pu, Ma Jin, Zong Fu-Jian, Xiao Hong-Di, Ji Feng.Structural and optical properties of MgxZn1-xO thin films deposited by radio frequency magnetron sputtering. Acta Physica Sinica, 2005, 54(9): 4309-4312.doi:10.7498/aps.54.4309 |
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Wang Yu-Heng, Ma Jin, Ji Feng, Yu Xu-Hu, Zhang Xi-Jian, Ma Hong-Lei.Structural and photoluminescence characters of SnO22:Sb thin films pr epared by rf magnetron sputtering. Acta Physica Sinica, 2005, 54(4): 1731-1735.doi:10.7498/aps.54.1731 |
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Xu Da-Yin, Liu Yan-Ping, He Zhi-Wei, Fang Ze-Bo, Liu Xue-Qin, Wang Yin-Yue.The behavior of photoluminescence from SiC:Tb films deposited on porous silicon substrate. Acta Physica Sinica, 2004, 53(8): 2694-2698.doi:10.7498/aps.53.2694 |
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Li Huo-Quan, Ning Zhao-Yuan, Cheng Shan-Hua, Jiang Mei-Fu.Photoluminescence centers and shift of ZnO films deposited by rf magnetron sputtering. Acta Physica Sinica, 2004, 53(3): 867-870.doi:10.7498/aps.53.867 |
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Zhang Xi-Tian, Xiao Zhi-Yan, Zhang Wei-Li, Gao Hong, Wang Yu-Xi, Liu Yi-Chun, Zhang Ji-Ying, Xu Wu.A study on photoluminescence characterization of high-quality nanocrystalline ZnO thin films. Acta Physica Sinica, 2003, 52(3): 740-744.doi:10.7498/aps.52.740 |
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Zhang De-Heng, Wang Qing-Pu, Xue Zhong-Ying.Ultra violet photoluminescenc of ZnO films on different substrates. Acta Physica Sinica, 2003, 52(6): 1484-1487.doi:10.7498/aps.52.1484 |
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MA SHU-YI, QIN GUO-GANG, YOU LI-PING, WANG YIN-YUE.COMPARATIVE STUDY ON PHOTOLUMINESCENCE FROM Si-CONTAINING SILICON OXIDE FILMS AND Ge-CONTAINING SILICON OXIDE FILMS. Acta Physica Sinica, 2001, 50(8): 1580-1584.doi:10.7498/aps.50.1580 |
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YUAN FANG-CHENG, RAN GUANG-ZHAO, CHAN YUAN, ZHANG BO-RUI, QIAO YONG-PING, FU JI-SHI, QIN GUO-GANG, MA ZHEN-CHANG, ZONG WAN-HUA.ROOM-TEMPERATURE 1.54μm Er3+ PHOTOLUMINESCENCE FROM Er-DOPED SILICON-RICH SILICON OXIDE FILM GROWN BY MAGNETRON SPUTTERING. Acta Physica Sinica, 2001, 50(12): 2487-2491.doi:10.7498/aps.50.2487 |
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