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Tang Jia-Xin, Li Zhan-Hai, Deng Xiao-Qing, Zhang Zhen-Hua.Electrical contact characteristics and regulatory effects of GaN/VSe2van der Waals heterojunction. Acta Physica Sinica, 2023, 72(16): 167101.doi:10.7498/aps.72.20230191 |
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Zhang Hai-Bao, Chen Qiang.Recent progress of non-thermal plasma material surface treatment and functionalization. Acta Physica Sinica, 2021, 70(9): 095203.doi:10.7498/aps.70.20202233 |
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Wang Su-Jie, Li Shu-Qiang, Wu Xiao-Ming, Chen Fang, Jiang Feng-Yi.Study on the effect of thermal annealing process on ohmic contact performance of AuGeNi/n-AlGaInP. Acta Physica Sinica, 2020, 69(4): 048103.doi:10.7498/aps.69.20191720 |
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He Tian-Li, Wei Hong-Yuan, Li Cheng-Ming, Li Geng-Wei.Comparative study of n-GaN transition group refractory metal Ohmic electrode. Acta Physica Sinica, 2019, 68(20): 206101.doi:10.7498/aps.68.20190717 |
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Feng Bo, Deng Biao, Liu Le-Gong, Li Zeng-Cheng, Feng Mei-Xin, Zhao Han-Min, Sun Qian.Effect of plasma surface treatment on embedded n-contact for GaN-based blue light-emitting diodes grown on Si substrate. Acta Physica Sinica, 2017, 66(4): 047801.doi:10.7498/aps.66.047801 |
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Zhu Yan-Xu, Cao Wei-Wei, Xu Chen, Deng Ye, Zou De-Shu.Effect of different ohmic contact pattern on GaN HEMT electrical properties. Acta Physica Sinica, 2014, 63(11): 117302.doi:10.7498/aps.63.117302 |
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Huang Ya-Ping, Yun Feng, Ding Wen, Wang Yue, Wang Hong, Zhao Yu-Kun, Zhang Ye, Guo Mao-Feng, Hou Xun, Liu Shuo.The reflectivity and ohmic contact resistivity of Ni/Ag/Ti/Au in contact with p-GaN. Acta Physica Sinica, 2014, 63(12): 127302.doi:10.7498/aps.63.127302 |
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Zhou Nan, Zheng Qiang, Hu Bei-Chen, Shi De-Quan, Miao Chun-Yu, Ma Chun-Yu, Liang Hong-Wei, Hao Sheng-Zhi, Zhang Qing-Yu.Effects of controlled surface states on the photoluminescence emission of GaN film. Acta Physica Sinica, 2014, 63(13): 137802.doi:10.7498/aps.63.137802 |
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Li Xiao-Jing, Zhao De-Gang, He Xiao-Guang, Wu Liang-Liang, Li Liang, Yang Jing, Le Ling-Cong, Chen Ping, Liu Zong-Shun, Jiang De-Sheng.Influence of different annealing temperature and atmosphere on the Ni/Au Ohmic contact to p-GaN. Acta Physica Sinica, 2013, 62(20): 206801.doi:10.7498/aps.62.206801 |
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Wang Xiao-Yong, Chong Ming, Zhao De-Gang, Su Yan-Mei.Two-dimensional hole gas in p-GaN/p-AlxGa1-xN heterojunctions and its influence on Ohmic contact. Acta Physica Sinica, 2012, 61(21): 217302.doi:10.7498/aps.61.217302 |
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Pan Shu-Wan, Qi Dong-Feng, Chen Song-Yan, Li Cheng, Huang Wei, Lai Hong-Kai.Se ultrathin film growth on Si(100) substrate and its application in Ti/n-Si(100) ohmic contact. Acta Physica Sinica, 2011, 60(9): 098108.doi:10.7498/aps.60.098108 |
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Wang Guang-Xu, Jiang Feng-Yi, Feng Fei-Fei, Liu Jun-Lin, Qiu Chong.N-polar n-type ohmic contact of GaN-based LED on Si substrate. Acta Physica Sinica, 2010, 59(8): 5706-5709.doi:10.7498/aps.59.5706 |
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Huang Wei, Chen Zhi-Zhan, Chen Bo-Yuan, Zhang Jing-Yu, Yan Cheng-Feng, Xiao Bing, Shi Er-Wei.Effect of hydrofluoric acid etching time on Ni/6H-SiC contacts. Acta Physica Sinica, 2009, 58(5): 3443-3447.doi:10.7498/aps.58.3443 |
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Ding Zhi-Bo, Wang Kun, Chen Tian-Xiang, Chen Di, Yao Shu-De.Investigation on the formation mechanism and diffusion of the electrode metal of oxidized Au/Ni/p-GaN ohmic contact in different alloying time. Acta Physica Sinica, 2008, 57(4): 2445-2449.doi:10.7498/aps.57.2445 |
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Song Shu-Fang, Chen Wei-De, Xu Zhen-Jia, Xu Xu-Rong.Deep level transient spectroscopy studies of Er and Pr implanted GaN films. Acta Physica Sinica, 2006, 55(3): 1407-1412.doi:10.7498/aps.55.1407 |
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Peng Dong-Sheng, Feng Yu-Chun, Wang Wen-Xin, Liu Xiao-Feng, Shi Wei, Niu Han-Ben.A new method to grow high quality GaN film by MOCVD. Acta Physica Sinica, 2006, 55(7): 3606-3610.doi:10.7498/aps.55.3606 |
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Wang Chong, Feng Qian, Hao Yue, Wan Hui.Effect of pre-metallization processing and annealing on Ni/Au Schottky contacts in AlGaN/GaN heterostructures. Acta Physica Sinica, 2006, 55(11): 6085-6089.doi:10.7498/aps.55.6085 |
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Xu Peng-Shou, Deng Rui, Pan Hai-Bin, Xu Fa-Qiang, Xie Chang-Kun, Li Yong-Hua, Liu Feng-Qin, K. Yibulaxin.Photoelectron diffraction study on the polarity of GaN surface. Acta Physica Sinica, 2004, 53(4): 1171-1176.doi:10.7498/aps.53.1171 |
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Zhang Ji-Cai, Dai Lun, Qin Guo-Gang, Ying Li-Zhen, Zhao Xin-Sheng.. Acta Physica Sinica, 2002, 51(3): 629-634.doi:10.7498/aps.51.629 |
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Xie Chang-Kun, Xu Fa-Qiang, Deng Rui, Xu Peng-Shou, Liu Feng-Qin, K.Yibulaxin.. Acta Physica Sinica, 2002, 51(11): 2606-2611.doi:10.7498/aps.51.2606 |
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