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Dan Min, Chen Lun-Jiang, He Yan-Bin, Wan Jun-Hao, Zhang Hong, Zhang Ke-Jia, Yang Yin, Jin Fan-Ya.Defect Evolution in Y0.5Gd0.5Ba2Cu3O7-δLayer by H Ion Irradiation. Acta Physica Sinica, 2023, 0(0): 0-0.doi:10.7498/aps.72.20221612 |
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Dong Ye, Zhu Te, Song Ya-Min, Ye Feng-Jiao, Zhang Peng, Yang Qi-Gui, Liu Fu-Yan, Chen Yu, Cao Xing-Zhong.Effect of dislocation on helium irradiation defects in low-activation martensitic steel. Acta Physica Sinica, 2023, 72(18): 187801.doi:10.7498/aps.72.20230694 |
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Dan Min, Chen Lun-Jiang, He Yan-Bin, Lü Xing-Wang, Wan Jun-Hao, Zhang Hong, Zhang Ke-Jia, Yang Ying, Jin Fan-Ya.Defect evolution in Y0.5Gd0.5Ba2Cu3O7–δsuperconducting layer irradiated by H+ions. Acta Physica Sinica, 2022, 71(23): 237401.doi:10.7498/aps.71.20221612 |
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Zhu Te, Cao Xing-Zhong.Research progress of hydrogen/helium effects in metal materials by positron annihilation spectroscopy. Acta Physica Sinica, 2020, 69(17): 177801.doi:10.7498/aps.69.20200724 |
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Yin Yuan, Li Ling, Yin Wan-Jian.Theoretical and computational study on defects of solar cell materials. Acta Physica Sinica, 2020, 69(17): 177101.doi:10.7498/aps.69.20200656 |
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Zhang Dong, Lou Wen-Kai, Chang Kai.Theoretical progress of polarized interfaces in semiconductors. Acta Physica Sinica, 2019, 68(16): 167101.doi:10.7498/aps.68.20191239 |
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Zhang Li-Juan, Zhang Chuan-Chao, Liao Wei, Liu Jian-Dang, Gu Bing-Chuan, Yuan Xiao-Dong, Ye Bang-Jiao.Influence of deuteration on the KH2PO4 crystal micro-defects characterization by using positron annihilation spectroscopy. Acta Physica Sinica, 2015, 64(9): 097802.doi:10.7498/aps.64.097802 |
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Qi Ning, Wang Yuan-Wei, Wang Dong, Wang Dan-Dan, Chen Zhi-Quan.Positron annihilation study of the microstructure of Co doped ZnO nanocrystals. Acta Physica Sinica, 2011, 60(10): 107805.doi:10.7498/aps.60.107805 |
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Li Jian-Hua, Zeng Xiang-Hua, Ji Zheng-Hua, Hu Yi-Pei, Chen Bao, Fan Yu-Pei.Electronic structure and optical properties of Ag-doping and Zn vacancy impurities in ZnS. Acta Physica Sinica, 2011, 60(5): 057101.doi:10.7498/aps.60.057101 |
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Shi Li-Bin, Xiao Zhen-Lin.Origin of ferromagnetic properties in Ni doped ZnO by the first principles study. Acta Physica Sinica, 2011, 60(2): 027502.doi:10.7498/aps.60.027502 |
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Chen Xiang-Lei, Zhang Jie, Du Huai-Jiang, Zhou Xian-Yi, Ye Bang-Jiao.Calculation of positron lifetime of compound semiconductors. Acta Physica Sinica, 2010, 59(1): 603-608.doi:10.7498/aps.59.603 |
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Zhou Kai, Li Hui, Wang Zhu.Defects in proton-irradiated Zn-doped GaSb studied by positron annihilation and photoluminescence. Acta Physica Sinica, 2010, 59(7): 5116-5121.doi:10.7498/aps.59.5116 |
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Zhao Wen-Bin, Zhang Guan-Jun, Yan Zhang.Investigation on surface damage phenomena induced by flashover across semiconductor. Acta Physica Sinica, 2008, 57(8): 5130-5137.doi:10.7498/aps.57.5130 |
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Feng Jing, Xiao Bing, Chen Jing-Chao.Electronic and optical properties of CuInSe2 from ab-initio calculations. Acta Physica Sinica, 2007, 56(10): 5990-5995.doi:10.7498/aps.56.5990 |
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Wang Bo, Zhao You-Wen, Dong Zhi-Yuan, Deng Ai-Hong, Miao Shan-Shan, Yang Jun.Electron irradiation induced defects in high temperature annealed InP single crystal. Acta Physica Sinica, 2007, 56(3): 1603-1607.doi:10.7498/aps.56.1603 |
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Hao Xiao-Peng, Wang Bao-Yi, Yu Run-Sheng, Wei Long.Zirconium-ion implantation of zircaloy-4 investiged by slow positron beam. Acta Physica Sinica, 2007, 56(11): 6543-6546.doi:10.7498/aps.56.6543 |
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Chen Zhi-Quan, Kawasuso Atsuo.Vacancy-type defects induced by He-implantation in ZnO studied by a slow positron beam. Acta Physica Sinica, 2006, 55(8): 4353-4357.doi:10.7498/aps.55.4353 |
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Chen Zhen-Ping, Xue Yun-Cai, Su Yu-Ling, Gong Shi-Cheng, Zhang Jin-Cang.Phase structures and local electron structures of Gd-doped YBa2Cu3O7－δ systems. Acta Physica Sinica, 2005, 54(11): 5382-5388.doi:10.7498/aps.54.5382 |
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LIU LI-HUA, DONG CHENG, DENG DONG-MEI, CHEN ZHEN-PING, ZHANG JIN-CANG.POSITRON ANNIHILATION STUDY OF THE STRUCTUREAND CLUSTERS IN Fe-DOPED YBCO. Acta Physica Sinica, 2001, 50(4): 769-774.doi:10.7498/aps.50.769 |
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PAN BI-CAI.TIGHT-BINDING POTENTIAL WITH CORRECTION OF BONDING ENVIRONMENT FOR SILICON-HYDROGEN. Acta Physica Sinica, 2001, 50(2): 268-272.doi:10.7498/aps.50.268 |
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