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Liu Jie, Liu Yan-Xia.Embedded-atom method potential for Ti2AlNb alloys. Acta Physica Sinica, 2022, 71(20): 203401.doi:10.7498/aps.71.20220846 |
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Cao Zhen, Hao Da-Peng, Tang Gang, Xun Zhi-Peng, Xia Hui.Influence of cluster shaped defects on fracture process of fiber bundle. Acta Physica Sinica, 2021, 70(20): 204602.doi:10.7498/aps.70.20210310 |
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Yin Yuan, Li Ling, Yin Wan-Jian.Theoretical and computational study on defects of solar cell materials. Acta Physica Sinica, 2020, 69(17): 177101.doi:10.7498/aps.69.20200656 |
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Zhang Dong, Lou Wen-Kai, Chang Kai.Theoretical progress of polarized interfaces in semiconductors. Acta Physica Sinica, 2019, 68(16): 167101.doi:10.7498/aps.68.20191239 |
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Liu Hao-Hua, Wang Shao-Hua, Li Bo-Bo, Li Hua-Lin.Defect induced asymmetric soliton transmission in the nonlinear circuit. Acta Physica Sinica, 2017, 66(10): 100502.doi:10.7498/aps.66.100502 |
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Zhang Xiu-Zhi, Wang Kai-Yue, Li Zhi-Hong, Zhu Yu-Mei, Tian Yu-Ming, Chai Yue-Sheng.Effect of nitrogen on the defect luminescence in diamond. Acta Physica Sinica, 2015, 64(24): 247802.doi:10.7498/aps.64.247802 |
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Zhang Ming-Lan, Yang Rui-Xia, Li Zhuo-Xin, Cao Xing-Zhong, Wang Bao-Yi, Wang Xiao-Hui.Study on proton irradiation induced defects in GaN thick film. Acta Physica Sinica, 2013, 62(11): 117103.doi:10.7498/aps.62.117103 |
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Wang Xin-Hua, Pang Lei, Chen Xiao-Juan, Yuan Ting-Ting, Luo Wei-Jun, Zheng Ying-Kui, Wei Ke, Liu Xin-Yu.Investigation on trap by the gate fringecapacitance in GaN HEMT. Acta Physica Sinica, 2011, 60(9): 097101.doi:10.7498/aps.60.097101 |
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Chen Wen-Hao, Du Lei, Yin Xue-Song, Kang Li, Wang Fang, Chen Song.Investigation on the low-freauency noise physical models and the defects' characterization of the PbS infrared dectector. Acta Physica Sinica, 2011, 60(10): 107202.doi:10.7498/aps.60.107202 |
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Shi Li-Bin, Xiao Zhen-Lin.Origin of ferromagnetic properties in Ni doped ZnO by the first principles study. Acta Physica Sinica, 2011, 60(2): 027502.doi:10.7498/aps.60.027502 |
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Liang Zhi-Peng, Dong Zheng-Chao.Shot noise in the semiconductor/ferromagnetic d-wave superconductor tunnel junction. Acta Physica Sinica, 2010, 59(2): 1288-1293.doi:10.7498/aps.59.1288 |
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Chen Xiang-Lei, Zhang Jie, Du Huai-Jiang, Zhou Xian-Yi, Ye Bang-Jiao.Calculation of positron lifetime of compound semiconductors. Acta Physica Sinica, 2010, 59(1): 603-608.doi:10.7498/aps.59.603 |
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Zhao Wen-Bin, Zhang Guan-Jun, Yan Zhang.Investigation on surface damage phenomena induced by flashover across semiconductor. Acta Physica Sinica, 2008, 57(8): 5130-5137.doi:10.7498/aps.57.5130 |
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Wang Hai-Yun, Weng Hui-Min, Ling C. C..Study of GaN/SiC contact using slow positron beam. Acta Physica Sinica, 2008, 57(9): 5906-5910.doi:10.7498/aps.57.5906 |
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Xia Zhi-Lin, Shao Jian-Da, Fan Zheng-Xiu.Effect of bulk inclusion in films on damage probability. Acta Physica Sinica, 2007, 56(1): 400-406.doi:10.7498/aps.56.400 |
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Chen Zhi-Quan, Kawasuso Atsuo.Vacancy-type defects induced by He-implantation in ZnO studied by a slow positron beam. Acta Physica Sinica, 2006, 55(8): 4353-4357.doi:10.7498/aps.55.4353 |
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Wu Shi-Gang, Shao Jian-Da, Fan Zheng-Xiu.Negative-ion element impurities breakdown model. Acta Physica Sinica, 2006, 55(4): 1987-1990.doi:10.7498/aps.55.1987 |
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Sun Xian-Kai, Lin Bi-Xia, Zhu Jun-Jie, Zhang Yang, Fu Zhu-Xi.Studies on the strain and its effect on defects in heteroepitaxial ZnO films prepared by LP-OCVD method. Acta Physica Sinica, 2005, 54(6): 2899-2903.doi:10.7498/aps.54.2899 |
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Li Peng-Fei, Yan Xiao-Hong, Wang Ru-Zhi.. Acta Physica Sinica, 2002, 51(9): 2139-2143.doi:10.7498/aps.51.2139 |
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TANG XUE-FENG, GU MU, TONG HONG-YONG, LIANG LING, YAO MING-ZHEN, CHEN LING-YAN, LIAO JING-YING, SHEN BIN-FU, QU XIANG-DONG, YIN ZHI-WEN, XU WEI-XIN, WANG JING-C HENG.A STUDY ON La-DOPED PbWO4 SCINTILLATING CRYSTAL. Acta Physica Sinica, 2000, 49(10): 2007-2010.doi:10.7498/aps.49.2007 |
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