| [1] |
Li Xu-Dong, Jiang Zeng-Gong, Gu Qiang, Zhang Meng, Lin Guo-Qiang, Zhao Ming-Hua, Guo Li.Cs-Te photocathode preparation with Te intermittent and Cs continuous deposition based on improved preparation success rate and quantum efficiency. Acta Physica Sinica, 2022, 71(17): 178501.doi:10.7498/aps.71.20220818 |
| [2] |
Zhu-Yue, Zhang Zi-Liang, Yang Yan-Ji, Xue Rong-Feng, Cui Wei-Wei, Lu Bo, Wang Juan, Chen Tian-Xiang, Wang Yu-Sa, Li Wei, Han Da-Wei, Huo Jia, Hu Wei, Li Mao-Shun, Zhang Yi, Zhu Yu-Xuan, Liu Miao, Zhao Xiao-Fan, Chen Yong.Quantum efficiency calibration for low energy detector in hard X-ray modulation telescope satellite. Acta Physica Sinica, 2017, 66(11): 112901.doi:10.7498/aps.66.112901 |
| [3] |
Qiao Jian-Liang, Xu Yuan, Gao You-Tang, Niu Jun, Chang Ben-Kang.Quantum efficiency for reflection-mode varied doping negative-electron-affinity GaN photocathode. Acta Physica Sinica, 2017, 66(6): 067903.doi:10.7498/aps.66.067903 |
| [4] |
Ding Mei-Bin, Lou Chao-Gang, Wang Qi-Long, Sun Qiang.Influence of quantum wells on the quantum efficiency of GaAs solar cells. Acta Physica Sinica, 2014, 63(19): 198502.doi:10.7498/aps.63.198502 |
| [5] |
Du Xiao-Qing, Wang Xiao-Hui, Chang Ben-Kang, Qian Yun-Sheng, Gao Pin, Zhang Yi-Jun, Guo Xiang-Yang.Comparison between gradient-doping and uniform-doping GaN photocathodes. Acta Physica Sinica, 2011, 60(4): 047901.doi:10.7498/aps.60.047901 |
| [6] |
Guo Xiang-Yang, Chang Ben-Kang, Wang Xiao-Hui, Zhang Yi-Jun, Yang Ming.Photoemission stability of negative electronaffinity GaN phtocathode. Acta Physica Sinica, 2011, 60(5): 058101.doi:10.7498/aps.60.058101 |
| [7] |
Fu Xiao-Qian, Chang Ben-Kang, Li Biao, Wang Xiao-Hui, Qiao Jian-Liang.Comprehensive Survey for the Frontier Disciplines Progress of negative electron affinity GaN photocathode. Acta Physica Sinica, 2011, 60(3): 038503.doi:10.7498/aps.60.038503 |
| [8] |
Zhang Yi-Jun, Niu Jun, Zhao Jing, Zou Ji-Jun, Chang Ben-Kang.Effect of exponential-doping structure on quantum yield of transmission-mode GaAs photocathodes. Acta Physica Sinica, 2011, 60(6): 067301.doi:10.7498/aps.60.067301 |
| [9] |
Zhao Jing, Zhang Yi-Jun, Chang Ben-Kang, Xiong Ya-Juan, Zhang Jun-Ju, Shi Feng, Cheng Hong-Chang, Cui Dong-Xu.Research on quantum efficient fitting and structure of high performance transmission-mode GaAs photocathode. Acta Physica Sinica, 2011, 60(10): 107802.doi:10.7498/aps.60.107802 |
| [10] |
Guo Xiang-Yang, Du Xiao-Qing, Chang Ben-Kang, Qiao Jian-Liang, Qian Yun-Sheng, Wang Xiao-Hui.Quantum efficiency recovery of reflection-mode NEA GaN photocathode. Acta Physica Sinica, 2011, 60(1): 017903.doi:10.7498/aps.60.017903 |
| [11] |
Mao Qing-Hua, Jiang Feng-Yi, Cheng Hai-Ying, Zheng Chang-Da.p-AlGaN electron blocking layer with different Al fractions on green InGaN/GaN LEDs grown on Si substrates. Acta Physica Sinica, 2010, 59(11): 8078-8082.doi:10.7498/aps.59.8078 |
| [12] |
Qiao Jian-Liang, Chang Ben-Kang, Du Xiao-Qing, Niu Jun, Zou Ji-Jun.Quantum efficiency decay mechanism for reflection-mode negative electron affinity GaN photocathode. Acta Physica Sinica, 2010, 59(4): 2855-2859.doi:10.7498/aps.59.2855 |
| [13] |
Niu Jun, Yang Zhi, Chang Ben-Kang, Qiao Jian-Liang, Zhang Yi-Jun.Study on the model of quantum efficiency of reflective varied doping GaAs photocathode. Acta Physica Sinica, 2009, 58(7): 5002-5006.doi:10.7498/aps.58.5002 |
| [14] |
Du Xiao-Qing, Chang Ben-Kang.Revision of quantum efficiency formula for negative electron affinity photocathodes. Acta Physica Sinica, 2009, 58(12): 8643-8650.doi:10.7498/aps.58.8643 |
| [15] |
Zhou Mei, Zhao De-Gang.Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors. Acta Physica Sinica, 2008, 57(7): 4570-4574.doi:10.7498/aps.57.4570 |
| [16] |
Jiao Rong-Zhen, Feng Chen-Xu, Ma Hai-Qiang.Performance of various quantum-key-distribution systems using 1.55 μm up-conversion single-photon detector. Acta Physica Sinica, 2008, 57(3): 1352-1355.doi:10.7498/aps.57.1352 |
| [17] |
Zou Ji-Jun, Chang Ben-Kang, Yang Zhi, Gao Pin, Qiao Jian-Liang, Zeng Yi-Ping.Stability of GaAs photocathodes under different intensities of illumination. Acta Physica Sinica, 2007, 56(10): 6109-6113.doi:10.7498/aps.56.6109 |
| [18] |
Zou Ji-Jun, Chang Ben-Kang, Yang Zhi.Theoretical calculation of quantum yield for exponential-doping GaAs photocathodes. Acta Physica Sinica, 2007, 56(5): 2992-2997.doi:10.7498/aps.56.2992 |
| [19] |
Zeng Long-Yue, Dai Song-Yuan, Wang Kong-Jia, Shi Cheng-Wu, Kong Fan-Tai, Hu Lin-Hua, Pan Xu.The mechanism of dye-sensitized solar cell based on nanocrystalline ZnO films. Acta Physica Sinica, 2005, 54(1): 53-57.doi:10.7498/aps.54.53 |
| [20] |
Chang Jun-Tao, Wu Ling-An.Absolute self-calibration of the quantum efficiency of single-photon detectors. Acta Physica Sinica, 2003, 52(5): 1132-1136.doi:10.7498/aps.52.1132 |
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