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Yuan Yong-Kai, Chen Qian, Gao Ting-Hong, Liang Yong-Chao, Xie Quan, Tian Ze-An, Zheng Quan, Lu Fei.Molecular dynamics simulations of GaAs crystal growth under different strains. Acta Physica Sinica, 2023, 72(13): 136801.doi:10.7498/aps.72.20221860 |
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Wang Guo-Jian, Liu Yan-Wen, Li Fen, Tian Hong, Zhu Hong, Li Yun, Zhao Heng-Bang, Wang Xiao-Xia, Zhang Zhi-Qiang.Effect of ion-beam surface treatment on photocathode emission. Acta Physica Sinica, 2021, 70(21): 218503.doi:10.7498/aps.70.20210587 |
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Hao Guang-Hui, Han Pan-Yang, Li Xing-Hui, Li Ze-Peng, Gao Yu-Juan.The electron emission characteristics of GaAs photocathode with vacuum-channel structure. Acta Physica Sinica, 2020, 69(10): 108501.doi:10.7498/aps.69.20191893 |
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Qiao Jian-Liang, Xu Yuan, Gao You-Tang, Niu Jun, Chang Ben-Kang.Quantum efficiency for reflection-mode varied doping negative-electron-affinity GaN photocathode. Acta Physica Sinica, 2017, 66(6): 067903.doi:10.7498/aps.66.067903 |
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Chen Xin-Long, Zhao Jing, Chang Ben-Kang, Xu Yuan, Zhang Yi-Jun, Jin Mu-Chun, Hao Guang-Hui.Comparison between exponential-doping reflection-mode GaAlAs and GaAs photocathodes. Acta Physica Sinica, 2013, 62(3): 037303.doi:10.7498/aps.62.037303 |
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Wang Jie, Han Qin, Yang Xiao-Hong, Ni Hai-Qiao, He Ji-Fang, Wang Xiu-Ping.High stability and linear tuning wavelength tunable resonant cavity enhanced photo-detector grown on GaAs. Acta Physica Sinica, 2012, 61(1): 018502.doi:10.7498/aps.61.018502 |
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Bi Juan, Jin Guang-Yong, Ni Xiao-Wu, Zhang Xi-He, Yao Zhi-Jian.Analysis of 532nm long pulse laser-induced thermal decomposition damage to GaAs by semi-analytical method. Acta Physica Sinica, 2012, 61(24): 244209.doi:10.7498/aps.61.244209 |
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Cai Zhi-Peng, Yang Wen-Zheng, Tang Wei-Dong, Hou Xun.Theoretical analysis of response characteristics for the large exponential-doping transmission-mode GaAs photocathodes. Acta Physica Sinica, 2012, 61(18): 187901.doi:10.7498/aps.61.187901 |
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Wang Xiu-Ping, Yang Xiao-Hong, Han Qin, Ju Yan-Ling, Du Yun, Zhu Bin, Wang Jie, Ni Hai-Qiao, He Ji-Fang, Wang Guo-Wei, Niu Zhi-Chuan.Preparation and photoluminescence study of patterned substrate quantum wires. Acta Physica Sinica, 2011, 60(2): 020703.doi:10.7498/aps.60.020703 |
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Zhao Jing, Zhang Yi-Jun, Chang Ben-Kang, Xiong Ya-Juan, Zhang Jun-Ju, Shi Feng, Cheng Hong-Chang, Cui Dong-Xu.Research on quantum efficient fitting and structure of high performance transmission-mode GaAs photocathode. Acta Physica Sinica, 2011, 60(10): 107802.doi:10.7498/aps.60.107802 |
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Guo Xiang-Yang, Chang Ben-Kang, Wang Xiao-Hui, Zhang Yi-Jun, Yang Ming.Photoemission stability of negative electronaffinity GaN phtocathode. Acta Physica Sinica, 2011, 60(5): 058101.doi:10.7498/aps.60.058101 |
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Zhang Yi-Jun, Niu Jun, Zhao Jing, Zou Ji-Jun, Chang Ben-Kang.Effect of exponential-doping structure on quantum yield of transmission-mode GaAs photocathodes. Acta Physica Sinica, 2011, 60(6): 067301.doi:10.7498/aps.60.067301 |
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Niu Jun, Zhang Yi-Jun, Chang Ben-Kang, Xiong Ya-Juan.Evaluation of surface potential barriers after activation of GaAs photocathode. Acta Physica Sinica, 2011, 60(4): 044210.doi:10.7498/aps.60.044210 |
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Wang Zhan-Guo, Niu Jie-Bin, Jia Rui, Peng Yin-Sheng, Yang Xiao-Hong, Ye Xiao-Ling, Xu Bo, Liang Song.Fabrication and luminescence characterization of two-dimensional GaAs-based photonic crystal nanocavities. Acta Physica Sinica, 2010, 59(10): 7073-7077.doi:10.7498/aps.59.7073 |
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Du Xiao-Qing, Chang Ben-Kang.Revision of quantum efficiency formula for negative electron affinity photocathodes. Acta Physica Sinica, 2009, 58(12): 8643-8650.doi:10.7498/aps.58.8643 |
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Teng Li-Hua, Yu Hua-Liang, Zuo Fang-Yuan, Wen Jin-Hui, Lin Wei-Zhu, Lai Tian-Shu.Energy-dependent evolution of electron spin polarization in bulk intrinsic GaAs. Acta Physica Sinica, 2008, 57(10): 6598-6603.doi:10.7498/aps.57.6598 |
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Teng Li-Hua, Yu Hua-Liang, Huang Zhi-Ling, Wen Jin-Hui, Lin Wei-Zhu, Lai Tian-Shu.Effect of spin polarization on electron recombination dynamics in bulk intrinsic GaAs. Acta Physica Sinica, 2008, 57(10): 6593-6597.doi:10.7498/aps.57.6593 |
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Zou Ji-Jun, Chang Ben-Kang, Yang Zhi.Theoretical calculation of quantum yield for exponential-doping GaAs photocathodes. Acta Physica Sinica, 2007, 56(5): 2992-2997.doi:10.7498/aps.56.2992 |
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Xu Hai-Hong, Jiao Zhong-Xing, Liu Xiao-Dong, Lei Liang, Wen Jin-Hui, Wang Hui, Lin Wei-Zhu, Lai Tian-Shu.Studies on the temperature and energy dependence of g factor in GaAs by femtosecond laser absorption quantum beats. Acta Physica Sinica, 2006, 55(5): 2618-2622.doi:10.7498/aps.55.2618 |
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Yuan Xian-Zhang, Miao Zhong-Lin.In-situ photo-modulated reflectance study on the interface of Al and GaAs surface quantum well. Acta Physica Sinica, 2004, 53(10): 3521-3524.doi:10.7498/aps.53.3521 |
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