[1] |
Yuan Yong-Kai, Chen Qian, Gao Ting-Hong, Liang Yong-Chao, Xie Quan, Tian Ze-An, Zheng Quan, Lu Fei.Molecular dynamics simulations of GaAs crystal growth under different strains. Acta Physica Sinica, 2023, 72(13): 136801.doi:10.7498/aps.72.20221860 |
[2] |
Wang Guo-Jian, Liu Yan-Wen, Li Fen, Tian Hong, Zhu Hong, Li Yun, Zhao Heng-Bang, Wang Xiao-Xia, Zhang Zhi-Qiang.Effect of ion-beam surface treatment on photocathode emission. Acta Physica Sinica, 2021, 70(21): 218503.doi:10.7498/aps.70.20210587 |
[3] |
Hao Guang-Hui, Han Pan-Yang, Li Xing-Hui, Li Ze-Peng, Gao Yu-Juan.The electron emission characteristics of GaAs photocathode with vacuum-channel structure. Acta Physica Sinica, 2020, 69(10): 108501.doi:10.7498/aps.69.20191893 |
[4] |
Wang Dan, He Yong-Ning, Ye Ming, Cui Wan-Zhao.Secondary electron emission characteristics of gold nanostructures. Acta Physica Sinica, 2018, 67(8): 087902.doi:10.7498/aps.67.20180079 |
[5] |
Qiao Jian-Liang, Xu Yuan, Gao You-Tang, Niu Jun, Chang Ben-Kang.Quantum efficiency for reflection-mode varied doping negative-electron-affinity GaN photocathode. Acta Physica Sinica, 2017, 66(6): 067903.doi:10.7498/aps.66.067903 |
[6] |
Chen Xin-Long, Zhao Jing, Chang Ben-Kang, Xu Yuan, Zhang Yi-Jun, Jin Mu-Chun, Hao Guang-Hui.Comparison between exponential-doping reflection-mode GaAlAs and GaAs photocathodes. Acta Physica Sinica, 2013, 62(3): 037303.doi:10.7498/aps.62.037303 |
[7] |
Wang Jie, Han Qin, Yang Xiao-Hong, Ni Hai-Qiao, He Ji-Fang, Wang Xiu-Ping.High stability and linear tuning wavelength tunable resonant cavity enhanced photo-detector grown on GaAs. Acta Physica Sinica, 2012, 61(1): 018502.doi:10.7498/aps.61.018502 |
[8] |
Bi Juan, Jin Guang-Yong, Ni Xiao-Wu, Zhang Xi-He, Yao Zhi-Jian.Analysis of 532nm long pulse laser-induced thermal decomposition damage to GaAs by semi-analytical method. Acta Physica Sinica, 2012, 61(24): 244209.doi:10.7498/aps.61.244209 |
[9] |
Yang Yong-Fu, Fu Rong-Guo, Ma Li, Wang Xiao-Hui, Zhang Yi-Jun.Effect of surface potential barrier on quantum efficiency decay of reflection-mode GaN photocathode. Acta Physica Sinica, 2012, 61(12): 128504.doi:10.7498/aps.61.128504 |
[10] |
Yang Yong-Fu, Fu Rong-Guo, Zhang Yi-Jun, Wang Xiao-Hui, Zou Ji-Jun.Effect of surface potential barrier on electron escape probability of GaN photocathode. Acta Physica Sinica, 2012, 61(6): 068501.doi:10.7498/aps.61.068501 |
[11] |
Guo Xiang-Yang, Chang Ben-Kang, Wang Xiao-Hui, Zhang Yi-Jun, Yang Ming.Photoemission stability of negative electronaffinity GaN phtocathode. Acta Physica Sinica, 2011, 60(5): 058101.doi:10.7498/aps.60.058101 |
[12] |
Wang Zhan-Guo, Niu Jie-Bin, Jia Rui, Peng Yin-Sheng, Yang Xiao-Hong, Ye Xiao-Ling, Xu Bo, Liang Song.Fabrication and luminescence characterization of two-dimensional GaAs-based photonic crystal nanocavities. Acta Physica Sinica, 2010, 59(10): 7073-7077.doi:10.7498/aps.59.7073 |
[13] |
Qiao Jian-Liang, Chang Ben-Kang, Du Xiao-Qing, Niu Jun, Zou Ji-Jun.Quantum efficiency decay mechanism for reflection-mode negative electron affinity GaN photocathode. Acta Physica Sinica, 2010, 59(4): 2855-2859.doi:10.7498/aps.59.2855 |
[14] |
Niu Jun, Yang Zhi, Chang Ben-Kang, Qiao Jian-Liang, Zhang Yi-Jun.Study on the model of quantum efficiency of reflective varied doping GaAs photocathode. Acta Physica Sinica, 2009, 58(7): 5002-5006.doi:10.7498/aps.58.5002 |
[15] |
Teng Li-Hua, Yu Hua-Liang, Huang Zhi-Ling, Wen Jin-Hui, Lin Wei-Zhu, Lai Tian-Shu.Effect of spin polarization on electron recombination dynamics in bulk intrinsic GaAs. Acta Physica Sinica, 2008, 57(10): 6593-6597.doi:10.7498/aps.57.6593 |
[16] |
Teng Li-Hua, Yu Hua-Liang, Zuo Fang-Yuan, Wen Jin-Hui, Lin Wei-Zhu, Lai Tian-Shu.Energy-dependent evolution of electron spin polarization in bulk intrinsic GaAs. Acta Physica Sinica, 2008, 57(10): 6598-6603.doi:10.7498/aps.57.6598 |
[17] |
Zou Ji-Jun, Chang Ben-Kang, Yang Zhi, Gao Pin, Qiao Jian-Liang, Zeng Yi-Ping.Stability of GaAs photocathodes under different intensities of illumination. Acta Physica Sinica, 2007, 56(10): 6109-6113.doi:10.7498/aps.56.6109 |
[18] |
Xu Hai-Hong, Jiao Zhong-Xing, Liu Xiao-Dong, Lei Liang, Wen Jin-Hui, Wang Hui, Lin Wei-Zhu, Lai Tian-Shu.Studies on the temperature and energy dependence of g factor in GaAs by femtosecond laser absorption quantum beats. Acta Physica Sinica, 2006, 55(5): 2618-2622.doi:10.7498/aps.55.2618 |
[19] |
Yuan Xian-Zhang, Miao Zhong-Lin.In-situ photo-modulated reflectance study on the interface of Al and GaAs surface quantum well. Acta Physica Sinica, 2004, 53(10): 3521-3524.doi:10.7498/aps.53.3521 |
[20] |
JIN PENG, PAN SHI-HONG, LIANG JI-BEN.FOURIER TRANSFORMATION STUDY OF THE FRANZ-KELDYSH OSCILLATION IN SIN+ GaAs STRUCTURES. Acta Physica Sinica, 2000, 49(9): 1821-1828.doi:10.7498/aps.49.1821 |