| [1] |
.Effects of point defects on thermal conductivity in cubic silicon carbide: A molecular dynamics study. Acta Physica Sinica, 2021, (): .doi:10.7498/aps.70.20211434 |
| [2] |
Zhang Hong, Guo Hong-Xia, Pan Xiao-Yu, Lei Zhi-Feng, Zhang Feng-Qi, Gu Zhao-Qiao, Liu Yi-Tian, Ju An-An, Ouyang Xiao-Ping.Transport process and energy loss of heavy ions in silicon carbide. Acta Physica Sinica, 2021, 70(16): 162401.doi:10.7498/aps.70.20210503 |
| [3] |
Lu Yuan-Yuan, Lu Gui-Hua, Zhou Heng-Wei, Huang Yi-Neng.Preparation and properties of spodumene/silicon carbide composite ceramic materials. Acta Physica Sinica, 2020, 69(11): 117701.doi:10.7498/aps.69.20200232 |
| [4] |
Li Yuan-Yuan, Yu Yin, Meng Chuan-Min, Zhang Lu, Wang Tao, Li Yong-Qiang, He Hong-Liang, He Duan-Wei.Dynamic impact strength of diamond-SiC superhard composite. Acta Physica Sinica, 2019, 68(15): 158101.doi:10.7498/aps.68.20190350 |
| [5] |
Shen Shuai-Shuai, He Chao-Hui, Li Yong-Hong.Non-ionization energy loss of proton in different regions in SiC. Acta Physica Sinica, 2018, 67(18): 182401.doi:10.7498/aps.67.20181095 |
| [6] |
Zhou Chun-Yu, Zhang He-Ming, Hu Hui-Yong, Zhuang Yi-Qi, Su Bin, Wang Bin, Wang Guan-Yu.Physical compact modeling for threshold voltage of strained Si NMOSFET. Acta Physica Sinica, 2013, 62(7): 077103.doi:10.7498/aps.62.077103 |
| [7] |
Song Kun, Chai Chang-Chun, Yang Yin-Tang, Jia Hu-Jun, Chen Bin, Ma Zhen-Yang.Effects of the improved hetero-material-gate approach on sub-micron silicon carbide metal-semiconductor field-effect transistor. Acta Physica Sinica, 2012, 61(17): 177201.doi:10.7498/aps.61.177201 |
| [8] |
Li Li, Liu Hong-Xia, Yang Zhao-Nian.Threshold-voltage and hole-sheet-density model of quantum well Si/SiGe/Si p field effect transistor. Acta Physica Sinica, 2012, 61(16): 166101.doi:10.7498/aps.61.166101 |
| [9] |
Fang Chao, Liu Ma-Lin.The study of the Raman spectra of SiC layers in TRISO particles. Acta Physica Sinica, 2012, 61(9): 097802.doi:10.7498/aps.61.097802 |
| [10] |
Zhou Nai-Gen, Hong Tao, Zhou Lang.A comparative study between MEAM and Tersoff potentials on the characteristics of melting and solidification of carborundum. Acta Physica Sinica, 2012, 61(2): 028101.doi:10.7498/aps.61.028101 |
| [11] |
Li Yu-Chen, Zhang He-Ming, Zhang Yu-Ming, Hu Hui-Yong, Xu Xiao-Bo, Qin Shan-Shan, Wang Guan-Yu.A analytic model for the threshold-voltage of novel high-speed semiconductor device IMOS. Acta Physica Sinica, 2012, 61(4): 047303.doi:10.7498/aps.61.047303 |
| [12] |
Wang Guan-Yu, Zhang He-Ming, Wang Xiao-Yan, Wu Tie-Feng, Wang Bin.Two-dimensional threshold voltage model of sub-100 nm strained-Si/SiGe nMOSFET. Acta Physica Sinica, 2011, 60(7): 077106.doi:10.7498/aps.60.077106 |
| [13] |
Qu Jiang-Tao, Zhang He-Ming, Wang Guan-Yu, Wang Xiao-Yan, Hu Hui-Yong.Threshold voltage model for quantum-well channelpMOSFET with poly SiGe gate. Acta Physica Sinica, 2011, 60(5): 058502.doi:10.7498/aps.60.058502 |
| [14] |
Huang Wei, Chen Zhi-Zhan, Chen Yi, Shi Er-Wei, Zhang Jing-Yu, Liu Qing-Feng, Liu Qian.Effect of Ni thickness on the contact properties of Ni/6H-SiC analyzed by combinatorial method. Acta Physica Sinica, 2010, 59(5): 3466-3472.doi:10.7498/aps.59.3466 |
| [15] |
Zhang Zhi-Feng, Zhang He-Ming, Hu Hui-Yong, Xuan Rong-Xi, Song Jian-Jun.Threshold voltage model of strained Si channel nMOSFET. Acta Physica Sinica, 2009, 58(7): 4948-4952.doi:10.7498/aps.58.4948 |
| [16] |
Lin Tao, Chen Zhi-Ming, Li Jia, Li Lian-Bi, Li Qing-Min, Pu Hong-Bin.Study of the growth characteristics of SiCGe layers grown on 6H-SiC substrates. Acta Physica Sinica, 2008, 57(9): 6007-6012.doi:10.7498/aps.57.6007 |
| [17] |
Zhang He-Ming, Cui Xiao-Ying, Hu Hui-Yong, Dai Xian-Ying, Xuan Rong-Xi.Study on threshold voltage model of strained SiGe quantum well channel SOI PMOSFET. Acta Physica Sinica, 2007, 56(6): 3504-3508.doi:10.7498/aps.56.3504 |
| [18] |
Li Yan-Ping, Xu Jing-Ping, Chen Wei-Bing, Xu Sheng-Guo, Ji Feng.2-D threshold voltage model for short-channel MOSFET with quantum-mechanical effects. Acta Physica Sinica, 2006, 55(7): 3670-3676.doi:10.7498/aps.55.3670 |
| [19] |
Dai Yue-Hua, Chen Jun-Ning, Ke Dao-Ming, Sun Jia-E.An analytical model of MOSFET threshold voltage with considiring the quantum effects. Acta Physica Sinica, 2005, 54(2): 897-901.doi:10.7498/aps.54.897 |
| [20] |
Wang Yuan, Zhang Yi-Men, Zhang Yu-Ming, Tang Xiao-Yan.A simulation study of 6H-SiC Schottky barrier source/drain MOSFET. Acta Physica Sinica, 2003, 52(10): 2553-2557.doi:10.7498/aps.52.2553 |
下载: