| [1] |
Ding Ye-Zhang, Ye Yin, Li Duo-Sheng, Xu Feng, Lang Wen-Chang, Liu Jun-Hong, Wen Xin.Molecular dynamics simulation of graphene deposition and growth on WC-Co cemented carbides. Acta Physica Sinica, 2023, 72(6): 068703.doi:10.7498/aps.72.20221332 |
| [2] |
He Xiao, Xiao Xiao-Zhou, He Bin, Xue Ping, Xiao Jia-Ying.Quantitative analysis of oxygen partial pressure measurements based on photoacoustic pump-probe imaging. Acta Physica Sinica, 2023, 72(21): 218101.doi:10.7498/aps.72.20231041 |
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Zhang Zhi-Chao, Wang Fang, Wu Shi-Jian, Li Yi, Mi Wei, Zhao Jin-Shi, Zhang Kai-Liang.Influneces of different oxygen partial pressures on switching properties of Ni/HfOx/TiN resistive switching devices. Acta Physica Sinica, 2018, 67(5): 057301.doi:10.7498/aps.67.20172194 |
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Lu Yong-Jun, Yang Yi, Wang Feng-Hui, Lou Kang, Zhao Xiang.Effect of continuously graded functional layer on curvature and residual stress of solid oxide fuel cell in initial reduction process. Acta Physica Sinica, 2016, 65(9): 098102.doi:10.7498/aps.65.098102 |
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Wang Hong, Yun Feng, Liu Shuo, Huang Ya-Ping, Wang Yue, Zhang Wei-Han, Wei Zheng-Hong, Ding Wen, Li Yu-Feng, Zhang Ye, Guo Mao-Feng.Effect of wafer bonding and laser liftoff process on residual stress of GaN-based vertical light emitting diode chips. Acta Physica Sinica, 2015, 64(2): 028501.doi:10.7498/aps.64.028501 |
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Zhou Da-Yu, Xu Jin.Ferroelectric and antiferroelectric properties of Si-doped HfO2 thin films. Acta Physica Sinica, 2014, 63(11): 117703.doi:10.7498/aps.63.117703 |
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Li Zhi-Guo, Liu Wei, He Jing-Jing, Li Zu-Liang, Han An-Jun, Zhang Chao, Zhou Zhi-Qiang, Zhang Yi, Sun Yun.Influences of deposition rate in second stage on the Cu(In,Ga)Se2 thin film and device prepared by low-temperature process. Acta Physica Sinica, 2013, 62(3): 038803.doi:10.7498/aps.62.038803 |
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Niu Zhong-Cai, He Zhi-Bing, Zhang Ying, Wei Jian-Jun, Liao Guo, Du Kai, Tang Yong-Jian.Influence of radio frequency power on the structure and optical properties of glow discharge polymer films. Acta Physica Sinica, 2012, 61(10): 106804.doi:10.7498/aps.61.106804 |
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Jiang Wei-Wei, Fan Lin-Yong, Zhao Rui-Feng, Wei Yan, Pei Li, Jian Shui-Sheng.Comb-filter based on two core fiber coupler and its CO2 laser trimming. Acta Physica Sinica, 2011, 60(4): 044214.doi:10.7498/aps.60.044214 |
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Xu Jun, Huang Yu-Jian, Ding Shi-Jin, Zhang Wei.Influence of Ta and TaN bottom electrodes on electrical performances of MIM capacitors with atomic-layer-deposited HfO2 dielectric. Acta Physica Sinica, 2009, 58(5): 3433-3436.doi:10.7498/aps.58.3433 |
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Jiang Yang, Luo Yi, Xi Guang-Yi, Wang Lai, Li Hong-Tao, Zhao Wei, Han Yan-Jun.Effect of AlGaN intermediate layer on residual stress control and surface morphology of GaN grown on 6H-SiC substrate by metal organic vapour phase epitaxy. Acta Physica Sinica, 2009, 58(10): 7282-7287.doi:10.7498/aps.58.7282 |
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Sun Hao-Liang, Song Zhong-Xiao, Xu Ke-Wei.Effect of substrate constraint on stress-induced cracking of sputtered tungsten thin film. Acta Physica Sinica, 2008, 57(8): 5226-5231.doi:10.7498/aps.57.5226 |
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.The effect of temperature of substrate and oxygen partial pressure on V2O5 films fabricated by magnetron sputtering. Acta Physica Sinica, 2007, 56(12): 7255-7261.doi:10.7498/aps.56.7255 |
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Yu Yi-Ting, Yuan Wei-Zheng, Qiao Da-Yong, Liang Qing.A novel microstructure for in-situ measurement of residual stress in micromechanical thin films. Acta Physica Sinica, 2007, 56(10): 5691-5697.doi:10.7498/aps.56.5691 |
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Kong De-Jun, Zhang Yong-Kang, Chen Zhi-Gang, Lu Jin-Zhong, Feng Ai-Xin, Ren Xu-Dong, Ge Tao.Experimental study of residual stress of galvanized passive film based on XRD. Acta Physica Sinica, 2007, 56(7): 4056-4061.doi:10.7498/aps.56.4056 |
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Zhang Yong-Kang, Kong De-Jun, Feng Ai-Xin, Lu Jin-Zhong, Ge Tao.Study on the detection of interfacial bonding strength of coatings (Ⅱ): detecting system of bonding strength. Acta Physica Sinica, 2006, 55(11): 6008-6012.doi:10.7498/aps.55.6008 |
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Wang Li-Xia, Li Jian-Ping, He Xiu-Li, Gao Xiao-Guang.Fabrication of vanadium dioxide films at low temperature and researches on properties of the films. Acta Physica Sinica, 2006, 55(6): 2846-2851.doi:10.7498/aps.55.2846 |
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Di Yu-Xian, Ji Xin-Hua, Hu Ming, Qin Yu-Wen, Chen Jin-Long.Residual stress measurement of porous silicon thin film by substrate curvature method. Acta Physica Sinica, 2006, 55(10): 5451-5454.doi:10.7498/aps.55.5451 |
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Qin Qi, Yu Nai-Sen, Guo Li-Wei, Wang Yang, Zhu Xue-Liang, Chen Hong, Zhou Jun-Ming.Residual stress in the GaN epitaxial film prepared by in situ SiNx deposition. Acta Physica Sinica, 2005, 54(11): 5450-5454.doi:10.7498/aps.54.5450 |
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Shao Shu-Ying, Fan Zheng-Xiu, Shao Jian-Da.Influences of the period of repeating thickness on the stress of alternative high and low refractivity ZrO2/SiO2 multilayers. Acta Physica Sinica, 2005, 54(7): 3312-3316.doi:10.7498/aps.54.3312 |
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