| [1] |
Wu Fan-Fan, Ji Yi-Ru, Yang Wei, Zhang Guang-Yu.Experimental research progress of electronic band structure and low temperature transport based on molybdenum disulfide. Acta Physica Sinica, 2022, 71(12): 127306.doi:10.7498/aps.71.20220015 |
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Xu Jia-Ling, Jia Li-Yun, Liu Chao, Wu Quan, Zhao Ling-Jun, Ma Li, Hou Deng-Lu.Band structure of topological insulator Li(Na)AuS. Acta Physica Sinica, 2021, 70(2): 027101.doi:10.7498/aps.70.20200885 |
| [3] |
Yang Wen, Song Jian-Jun, Ren Yuan, Zhang He-Ming.Band structure model of modified Ge for optical device application. Acta Physica Sinica, 2018, 67(19): 198502.doi:10.7498/aps.67.20181155 |
| [4] |
Di Lin-Jia, Dai Xian-Ying, Song Jian-Jun, Miao Dong-Ming, Zhao Tian-Long, Wu Shu-Jing, Hao Yue.Calculations of energy band structure and mobility in critical bandgap strained Ge1-xSnx based on Sn component and biaxial tensile stress modulation. Acta Physica Sinica, 2018, 67(2): 027101.doi:10.7498/aps.67.20171969 |
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Dai Zhong-Hua, Qian Yi-Chen, Xie Yao-Ping, Hu Li-Juan, Li Xiao-Di, Ma Hai-Tao.First-principle study of effect of asymmetric biaxial tensile strain on band structure of Germanium. Acta Physica Sinica, 2017, 66(16): 167101.doi:10.7498/aps.66.167101 |
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Jin Feng, Zhang Zhen-Hua, Wang Cheng-Zhi, Deng Xiao-Qing, Fan Zhi-Qiang.Twisting effects on energy band structures and transmission behaviors of graphene nanoribbons. Acta Physica Sinica, 2013, 62(3): 036103.doi:10.7498/aps.62.036103 |
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Sun Wei-Feng, Zheng Xiao-Xia.First-principles study of interface relaxation effects on interface structure, band structure and optical property of InAs/GaSb superlattices. Acta Physica Sinica, 2012, 61(11): 117301.doi:10.7498/aps.61.117301 |
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Gao Shang-Peng, Zhu Tong.Quasiparticle band structure calculation for SiC using self-consistent GW method. Acta Physica Sinica, 2012, 61(13): 137103.doi:10.7498/aps.61.137103 |
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Sun Wei-Feng, Zheng Xiao-Xia.First-principles study of (InAs)1/(GaSb)1 superlattice nanowires. Acta Physica Sinica, 2012, 61(11): 117103.doi:10.7498/aps.61.117103 |
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Lin Qi, Chen Yu-Hang, Wu Jian-Bao, Kong Zong-Min.Effect of N-doping on band structure and transport property of zigzag graphene nanoribbons. Acta Physica Sinica, 2011, 60(9): 097103.doi:10.7498/aps.60.097103 |
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Ma Xiao-Feng, Wang Yi-Zhe, Zhou Cheng-Yue.Structural and optical properties of a-Si ∶H/SiO2 multiple quantum wells. Acta Physica Sinica, 2011, 60(6): 068102.doi:10.7498/aps.60.068102 |
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Ma Jian-Li, Zhang He-Ming, Song Jian-Jun, Wang Guan-Yu, Wang Xiao-Yan.Energy band structure of uniaxial-strained silicon material on the (001) surface arbitrary orientation. Acta Physica Sinica, 2011, 60(2): 027101.doi:10.7498/aps.60.027101 |
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Dong Hua-Feng, Wu Fu-Gen, Mu Zhong-Fei, Zhong Hui-Lin.Effect of basis configuration on acoustic band structure in two-dimensional complex phononic crystals. Acta Physica Sinica, 2010, 59(2): 754-758.doi:10.7498/aps.59.754 |
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Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Xuan Rong-Xi, Dai Xian-Ying.Model of hole effective mass of strained Si1－xGex/(111)Si. Acta Physica Sinica, 2010, 59(1): 579-582.doi:10.7498/aps.59.579 |
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Wang Wei, Sun Jia-Fa, Liu Mei, Liu Su.First-principles calculations on the electronic band structure of β-Pyrochlore superconductors AOs2O6 (A=K,Rb,Cs). Acta Physica Sinica, 2009, 58(8): 5632-5639.doi:10.7498/aps.58.5632 |
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Song Jian-Jun, Zhang He-Ming, Dai Xian-Ying, Hu Hui-Yong, Xuan Rong-Xi.Band structure of strained Si/(111)Si1-xGex: a first principles investigation. Acta Physica Sinica, 2008, 57(9): 5918-5922.doi:10.7498/aps.57.5918 |
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Shao Ming-Zhu, Luo Shi-Yu.The sine-squared potential and the band structure for channelling effects. Acta Physica Sinica, 2007, 56(6): 3407-3410.doi:10.7498/aps.56.3407 |
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Wu Yun-Wen, Hai Wen-Hua, Cai Li-Hua.Energy band structure of two ions in a one-dimensional Paul trap. Acta Physica Sinica, 2006, 55(2): 583-589.doi:10.7498/aps.55.583 |
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Chen De-Yan, Lü Tie-Yu, Huang Mei-Chun.GW quasiparticle band structure of BaSe. Acta Physica Sinica, 2006, 55(7): 3597-3600.doi:10.7498/aps.55.3597 |
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Pan Hong-Zhe, Xu Ming, Zhu Wen-Jun, Zhou Hai-Ping.First-principles study on the electrical structures and optical properties of β-Si3N4. Acta Physica Sinica, 2006, 55(7): 3585-3589.doi:10.7498/aps.55.3585 |
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