[1] |
Liu Hui-Cheng, Xu Jia-Xiong, Lin Jun-Hui.Numerical analysis of Cu2ZnSnS4solar cells on Si substrate. Acta Physica Sinica, 2021, 70(10): 108801.doi:10.7498/aps.70.20201936 |
[2] |
Jiang Feng-Yi, Liu Jun-Lin, Zhang Jian-Li, Xu Long-Quan, Ding Jie, Wang Guang-Xu, Quan Zhi-Jue, Wu Xiao-Ming, Zhao Peng, Liu Bi-Yu, Li Dan, Wang Xiao-Lan, Zheng Chang-Da, Pan Shuan, Fang Fang, Mo Chun-Lan.Semiconductor yellow light-emitting diodes. Acta Physica Sinica, 2019, 68(16): 168503.doi:10.7498/aps.68.20191044 |
[3] |
Xin Jian-Guo, Yang Chuan-Lu, Wang Mei-Shan, Ma Xiao-Guang.Electronic transport properties of oligo phenylene ethynylene molecule modified by the (CH3)2 and (NH2)2 groups. Acta Physica Sinica, 2016, 65(7): 073102.doi:10.7498/aps.65.073102 |
[4] |
Lin Xiao-Na, Zhang Guang-Ping, Ren Jun-Feng, Yuan Xiao-Bo, Hu Gui-Chao.Electronic transport properties of oligophenyleneethynylene molecular junctions in alkaline and acid solutions. Acta Physica Sinica, 2014, 63(6): 068502.doi:10.7498/aps.63.068502 |
[5] |
Liu Ya-Jie.Prediction of the magneto-resistivity of manganese oxides La0.67Ca0.33MnO3 and Pr0.7Sr0.3MnO3 via temperature and magnetic field. Acta Physica Sinica, 2013, 62(1): 017601.doi:10.7498/aps.62.017601 |
[6] |
Yang Shi-Hai, Jin Ke-Xin, Wang Jing, Luo Bing-Cheng, Chen Chang-Le.Rectifying behavior and photocarrier injection effect in BaTiO3/p-Si heterostructure. Acta Physica Sinica, 2013, 62(14): 147305.doi:10.7498/aps.62.147305 |
[7] |
Wu Mei-Ling, Shi Da-Wei, Kan Zhi-Lan, Wang Rui-Long, Ding Yi-Min, Xiao Hai-Bo, Yang Chang-Ping.Comparison bwtween intrinsic and interfacial electrical pulse induced resistance effects in La0.5Ca0.5MnO3 ceramics. Acta Physica Sinica, 2013, 62(20): 207302.doi:10.7498/aps.62.207302 |
[8] |
Wang Zhong-Wei, Zhang Jian, Wei Dong, Ying Zhao, Jing Zhao, Xu Chen.Improvement of resistive switching in Ti/Pr0.7Ca0.3MnO3/La0.67Sr0.33MnO3/Pt heterostructures. Acta Physica Sinica, 2011, 60(11): 117306.doi:10.7498/aps.60.117306 |
[9] |
Chen Peng, Jin Ke-Xin, Chen Chang-Le, Tan Xing-Yi.Rectifying behavior and photovoltaic effect in La0.88 Te0.12 MnO3/Si heterostructure. Acta Physica Sinica, 2011, 60(6): 067303.doi:10.7498/aps.60.067303 |
[10] |
Gang Jian-Lei, Li Song-Lin, Meng Yang, Liao Zhao-Liang, Liang Xue-Jin, Chen Dong-Min.Reproducible low-current resistive switching of metal/Pr0.7Ca0.3MnO3/Pt junctions with a point-contact top electrode. Acta Physica Sinica, 2009, 58(8): 5730-5735.doi:10.7498/aps.58.5730 |
[11] |
Ma Yu-Bin.Ferromagnetic-antiferromagnetic transition and resistivity variation of oxygen-deficient La0.5Ca0.5MnO3 samples. Acta Physica Sinica, 2009, 58(7): 4976-4979.doi:10.7498/aps.58.4976 |
[12] |
Cui Xiu-Zhi, Zhang Tian-Chong, Mei Zeng-Xia, Liu Zhang-Long, Liu Yao-Ping, Guo Yang, Su Xi-Yu, Xue Qi-Kun, Du Xiao-Long.Influence of wet etching on the morphologies of Si patterned substrates and ZnO epilayers. Acta Physica Sinica, 2009, 58(1): 309-314.doi:10.7498/aps.58.309 |
[13] |
Xing Hai-Ying, Fan Guang-Han, Zhou Tian-Ming.Electronic and magnetic properties of p,n type dopant and Mn co-doped GaN. Acta Physica Sinica, 2009, 58(5): 3324-3330.doi:10.7498/aps.58.3324 |
[14] |
Wang Chong, Liu Zhao-Lin, Liu Jun-Ming, Chen Xue-Mei, Cui Hao-Yang, Xia Chang-Sheng, Yang Yu, Lu Wei.The study on the rectifying properties of oxygen non-stoichiometric La0.9Ba0.1MnO3-δ/SrTiO3:Nb p-n heterojunction. Acta Physica Sinica, 2008, 57(1): 502-507.doi:10.7498/aps.57.502 |
[15] |
Tang Xin-Xin, Luo Wen-Yun, Wang Chao-Zhuang, He Xin-Fu, Zha Yuan-Zi, Fan Sheng, Huang Xiao-Long, Wang Chuan-Shan.Non-ionizing energy loss of low energy proton in semiconductor materials Si and GaAs. Acta Physica Sinica, 2008, 57(2): 1266-1270.doi:10.7498/aps.57.1266 |
[16] |
Yang Xin-Sheng, Zhao Yong.The study of ZnO varistor doped with ferromagnetic manganese oxide. Acta Physica Sinica, 2008, 57(5): 3188-3192.doi:10.7498/aps.57.3188 |
[17] |
Shang Li-Yan, Lin Tie, Zhou Wen-Zheng, Li Dong-Lin, Gao Hong-Ling, Zeng Yi-Ping, Guo Shao-Ling, Yu Guo-Lin, Chu Jun-Hao.Positive magnetoresistance in In0.53Ga0.47As/In0.52Al0.48As quantum well. Acta Physica Sinica, 2008, 57(8): 5232-5236.doi:10.7498/aps.57.5232 |
[18] |
Liu Li-Feng, Lü Hui-Bin, Dai Shou-Yu, Chen Zheng-Hao.Rectifying characteristics of La0.9Sr0.1MnO3/Si p-n diodes. Acta Physica Sinica, 2005, 54(5): 2342-2345.doi:10.7498/aps.54.2342 |
[19] |
Liu Wei, Chen Jin-Ping, Guan Wei, Xiong Guang-Cheng, Yan Shou-Sheng.Transport properties of colossal magnetoresistance of Pr2/3Sr1/3MnO3 film. Acta Physica Sinica, 2004, 53(2): 601-605.doi:10.7498/aps.53.601 |
[20] |
Zhou Jian-Ping, Chen Nuo-Fu, Song Shu-Lin, Chai Chun-Lin, Yang Shao-Yan, Liu Zhi-Kai, Lin Lan-Ying.Magnetic properties and rectifying behaviour of silicon doped with gadolinium. Acta Physica Sinica, 2003, 52(6): 1469-1473.doi:10.7498/aps.52.1469 |