| [1] |
Wang Shuai, Ge Chen, Xu Zu-Yin, Cheng Ai-Qiang, Chen Dun-Jun.Modeling of temperature effect on DC characteristics of microwave GaN devices. Acta Physica Sinica, 2024, 73(17): 177101.doi:10.7498/aps.73.20240765 |
| [2] |
Hao Rui-Jing, Guo Hong-Xia, Pan Xiao-Yu, Lü Ling, Lei Zhi-Feng, Li Bo, Zhong Xiang-Li, Ouyang Xiao-Ping, Dong Shi-Jian.Neutron-induced displacement damage effect and mechanism of AlGaN/GaN high electron mobility transistor. Acta Physica Sinica, 2020, 69(20): 207301.doi:10.7498/aps.69.20200714 |
| [3] |
Liu Jing, Wang Lin-Qian, Huang Zhong-Xiao.Current collapse suppression in AlGaN/GaN high electron mobility transistor with groove structure. Acta Physica Sinica, 2019, 68(24): 248501.doi:10.7498/aps.68.20191311 |
| [4] |
Zhang Yan, Dong Gang, Yang Yin-Tang, Wang Ning, Wang Feng-Juan, Liu Xiao-Xian.A novel interconnect-optimal power model considering self-heating effect. Acta Physica Sinica, 2013, 62(1): 016601.doi:10.7498/aps.62.016601 |
| [5] |
Ma Ji-Gang, Ma Xiao-Hua, Zhang Hui-Long, Cao Meng-Yi, Zhang Kai, Li Wen-Wen, Guo Xing, Liao Xue-Yang, Chen Wei-Wei, Hao Yue.A semiempirical model for kink effect on the AlGaN/GaN high electron mobility transistor. Acta Physica Sinica, 2012, 61(4): 047301.doi:10.7498/aps.61.047301 |
| [6] |
Cao Lei, Liu Hong-Xia.Study on the self-heating effect in silicon-on-insulator devices with SOANN buried oxide. Acta Physica Sinica, 2012, 61(17): 177301.doi:10.7498/aps.61.177301 |
| [7] |
Yu Chen-Hui, Luo Xiang-Dong, Zhou Wen-Zheng, Luo Qing-Zhou, Liu Pei-Sheng.Investigation on the current collapse effect of AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs. Acta Physica Sinica, 2012, 61(20): 207301.doi:10.7498/aps.61.207301 |
| [8] |
Yao Hong-Bin, Zheng Yu-Jun.The non-adiabatic effects of NaI molecule. Acta Physica Sinica, 2011, 60(12): 128201.doi:10.7498/aps.60.128201 |
| [9] |
Zhu Zheng-He, Meng Da-Qiao.The delocalization effect of 5f electrons for the actinide elements Th to Es. Acta Physica Sinica, 2011, 60(4): 040301.doi:10.7498/aps.60.040301 |
| [10] |
Wang Lin, Hu Wei-Da, Chen Xiao-Shuang, Lu Wei.Study on mechanism of current collapse and knee voltage drift for AlGaN/GaN HEMTs. Acta Physica Sinica, 2010, 59(8): 5730-5737.doi:10.7498/aps.59.5730 |
| [11] |
Hao Li-Chao, Duan Jun-Li.Static surface states and bulk traps in AlGaN/GaN HEMT including hot electron and quantum effects. Acta Physica Sinica, 2010, 59(4): 2746-2752.doi:10.7498/aps.59.2746 |
| [12] |
Dong Hao, Ren Min, Zhang Lei, Deng Ning, Chen Pei-Yi.Thermal effect in current induced magnetic switching. Acta Physica Sinica, 2009, 58(10): 7176-7182.doi:10.7498/aps.58.7176 |
| [13] |
Wei Wei, Lin Ruo-Bing, Feng Qian, Hao Yue.Current collapse mechanism of field-plated AlGaN/GaN HEMTs. Acta Physica Sinica, 2008, 57(1): 467-471.doi:10.7498/aps.57.467 |
| [14] |
Xi Guang-Yi, Ren Fan, Hao Zhi-Biao, Wang Lai, Li Hong-Tao, Jiang Yang, Zhao Wei, Han Yan-Jun, Luo Yi.Influence of pit defects on AlGaN surface and dislocation defects in GaN buffer layer on current collapse of AlGaN/GaN HEMTs. Acta Physica Sinica, 2008, 57(11): 7238-7243.doi:10.7498/aps.57.7238 |
| [15] |
Hao Yue, Han Xin-Wei, Zhang Jin-Cheng, Zhang Jin-Feng.Current slump mechanism and its physical model of AlGaN/GaN HEMTs under DC bias. Acta Physica Sinica, 2006, 55(7): 3622-3628.doi:10.7498/aps.55.3622 |
| [16] |
Jiao Yi-Ming, Long Yong-Xing, Dong Jia-Qi, Shi Bing-Ren, Gao Qing-Di.Effects of the trapping effect on LHCD in tokamak. Acta Physica Sinica, 2005, 54(1): 180-185.doi:10.7498/aps.54.180 |
| [17] |
Yang Lin-An, Zhang Yi-Men, Gong Ren-Xi, Zhang Yu-Ming.. Acta Physica Sinica, 2002, 51(1): 148-152.doi:10.7498/aps.51.148 |
| [18] |
SHAO LEIL, HUO YU-KUN, WANG PING-XIAO, KONG QING, YUAN XIANG-QUN, FENG LIANG.EFFECT OF FIELD POLARIZATION DIRECTION ON ACCELERATING ELECTRON WITH EXTRA-INTENSE STATIONARY LASER BEAM. Acta Physica Sinica, 2001, 50(7): 1284-1289.doi:10.7498/aps.50.1284 |
| [19] |
Huang Chao-song Ren Zhao-xing Qiu LI-jian.EFFECTS OF LINE-TYING ON HOT ELECTRON INTERCHANGE MODE. Acta Physica Sinica, 1987, 36(8): 1028-1032.doi:10.7498/aps.36.1028 |
| [20] |
ZHU ANG-RU, WU XI-LIN.THE MECHANISM OF THE SECONDARY ION EMISSION INVESTIGATED BY THE EFFECT OF ENERGETIC ELECTRONS. Acta Physica Sinica, 1984, 33(10): 1475-1479.doi:10.7498/aps.33.1475 |
下载: