| [1] |
Chen Jing-Jing, Zhao Hong-Po, Wang Kui, Zhan Hui-Min, Luo Ze-Yu.Molecular dynamics simulation of mechanical strengthening properties of SiC substrate covered with multilayer graphene. Acta Physica Sinica, 2024, 73(10): 109601.doi:10.7498/aps.73.20232031 |
| [2] |
Liu Yuan-Feng, Li Bin-Cheng, Zhao Bin-Xing, Liu Hong.Detection of subsurface defects in silicon carbide bulk materials with photothermal radiometry. Acta Physica Sinica, 2023, 72(2): 024208.doi:10.7498/aps.72.20221303 |
| [3] |
Deng Xu-Liang, Ji Xian-Fei, Wang De-Jun, Huang Ling-Qin.First principle study on modulating of Schottky barrier at metal/4H-SiC interface by graphene intercalation. Acta Physica Sinica, 2022, 71(5): 058102.doi:10.7498/aps.71.20211796 |
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Yu Zi-Heng, Ma Chun-Hong, Bai Shao-Xian.Effect of sharp edge of ring-groove-structures in SiC surface. Acta Physica Sinica, 2021, 70(4): 044702.doi:10.7498/aps.70.20201303 |
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Huang Yi-Hua, Jiang Dong-Liang, Zhang Hui, Chen Zhong-Ming, Huang Zheng-Ren.Ferromagnetism of Al-doped 6H-SiC and theoretical calculation. Acta Physica Sinica, 2017, 66(1): 017501.doi:10.7498/aps.66.017501 |
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Li Li-Li, Xia Zhen-Hai, Yang Yan-Qing, Han Ming.Molecular dynamics study on tensile behavior of SiC nanofiber/C/SiC nanocomposites. Acta Physica Sinica, 2015, 64(11): 117101.doi:10.7498/aps.64.117101 |
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Lu Wu-Yue, Zhang Yong-Ping, Chen Zhi-Zhan, Cheng Yue, Tan Jia-Hui, Shi Wang-Zhou.Effect of different annealing treatment methods on the Ni/SiC contact interface properties. Acta Physica Sinica, 2015, 64(6): 067303.doi:10.7498/aps.64.067303 |
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Wang Cheng-Long, Wang Qing-Yu, Zhang Yue, Li Zhong-Yu, Hong Bing, Su Zhe, Dong Liang.Molecular dynamics study of cascade damage at SiC/C interface. Acta Physica Sinica, 2014, 63(15): 153402.doi:10.7498/aps.63.153402 |
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Yang Shuai, Tang Xiao-Yan, Zhang Yu-Ming, Song Qing-Wen, Zhang Yi-Men.Influence of charge imbalance on breakdown voltage of 4H-SiC semi-superjunction VDMOSFET. Acta Physica Sinica, 2014, 63(20): 208501.doi:10.7498/aps.63.208501 |
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Wang Jian-Wei, Song Yi-Xu, Ren Tian-Ling, Li Jin-Chun, Chu Guo-Liang.Molecular dynamics simulation of Lag effect in fluorine plasma etching Si. Acta Physica Sinica, 2013, 62(24): 245202.doi:10.7498/aps.62.245202 |
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He Ping-Ni, Ning Jian-Ping, Qin You-Min, Zhao Cheng-Li, Gou Fu-Jun.Molecular dynamics simulations of low-energy Clatoms etching Si(100) surface. Acta Physica Sinica, 2011, 60(4): 045209.doi:10.7498/aps.60.045209 |
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Zhang Yun, Shao Xiao-Hong, Wang Zhi-Qiang.A first principle study on p-type doped 3C-SiC. Acta Physica Sinica, 2010, 59(8): 5652-5660.doi:10.7498/aps.59.5652 |
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Yan An-Ying, Jiang Ming, Zhang Chuan-Wu, Miao Feng, Gou Fu-Jun.Energy and spectrum of BeO molecule under the electric field from different directions. Acta Physica Sinica, 2010, 59(11): 7743-7748.doi:10.7498/aps.59.7743 |
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Ma Wen, Zhu Wen-Jun, Zhang Ya-Lin, Chen Kai-Guo, Deng Xiao-Liang, Jing Fu-Qian.Construction of metallic nanocrystalline samples by molecular dynamics simulation. Acta Physica Sinica, 2010, 59(7): 4781-4787.doi:10.7498/aps.59.4781 |
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Qin You-Min, Zhao Cheng-Li, He Ping-Ni, Gou Fu-Jun, Ning Jian-Ping, Lü Xiao-Dan, Bogaerts A..Molecular dynamics simulation of temperature effects on CF+3 etching of Si surface. Acta Physica Sinica, 2010, 59(10): 7225-7231.doi:10.7498/aps.59.7225 |
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Huang Wei, Chen Zhi-Zhan, Chen Bo-Yuan, Zhang Jing-Yu, Yan Cheng-Feng, Xiao Bing, Shi Er-Wei.Effect of hydrofluoric acid etching time on Ni/6H-SiC contacts. Acta Physica Sinica, 2009, 58(5): 3443-3447.doi:10.7498/aps.58.3443 |
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Ma Ge-Lin, Zhang Yu-Ming, Zhang Yi-Men, Ma Zhong-Fa.The study of optimal fitting parameter for C 1s spectra of SiC surface. Acta Physica Sinica, 2008, 57(7): 4125-4129.doi:10.7498/aps.57.4125 |
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Ma Ge-Lin, Zhang Yu-Ming, Zhang Yi-Men, Ma Zhong-Fa.Study on the chemical states of the surface of SiC epilayer. Acta Physica Sinica, 2008, 57(7): 4119-4124.doi:10.7498/aps.57.4119 |
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Gao Jin-Xia, Zhang Yi-Men, Tang Xiao-Yan, Zhang Yu-Ming.Extraction of channel carrier concentration using C-V method for SiC buried-channel MOSFET. Acta Physica Sinica, 2006, 55(6): 2992-2996.doi:10.7498/aps.55.2992 |
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Shang Ye-Chun, Liu Zhong-Li, Wang Shu-Rui.Study on the reverse characteristics of Ti/6H-SiC Schottky contacts. Acta Physica Sinica, 2003, 52(1): 211-216.doi:10.7498/aps.52.211 |
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