[1] |
Su Le, Wang Cai-Lin, Tan Zai-Chao, Luo Yin, Yang Wu-Hua, Zhang Chao.Establishment of analytical model for electrostatic discharge gate-to-source capacitance of power metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2024, 73(11): 118501.doi:10.7498/aps.73.20240144 |
[2] |
Zhu Yu-Hao, Yuan Xiang, Wu Yong, Wang Jian-Guo.Non-radiative charge transfer process of proton impcating B atom. Acta Physica Sinica, 2023, 72(16): 163401.doi:10.7498/aps.72.20230470 |
[3] |
Huang Hao, Niu Ben, Tao Ting-Ting, Luo Shi-Ping, Wang Ying, Zhao Xiao-Hui, Wang Kai, Li Zhi-Qiang, Dang Wei.Ultrafast carrier kinetics at surface and interface of Sb2Se3film by transient reflectance. Acta Physica Sinica, 2022, 71(6): 066402.doi:10.7498/aps.71.20211714 |
[4] |
Lu Chao, Chen Wei, Luo Yin-Hong, Ding Li-Li, Wang Xun, Zhao Wen, Guo Xiao-Qiang, Li Sai.Effect of source-drain conduction in single-event transient on nanoscaled bulk fin field effect transistor. Acta Physica Sinica, 2020, 69(8): 086101.doi:10.7498/aps.69.20191896 |
[5] |
Pan Guo-Xing, Li Tian, Tang Guo-Qiang, Zhang Fa-Pei.Growth and carrier transport properties of highly oriented films of the semiconducting polymers via solution dip-casting. Acta Physica Sinica, 2017, 66(15): 156801.doi:10.7498/aps.66.156801 |
[6] |
Nie Guo-Zheng, Zou Dai-Feng, Zhong Chun-Liang, Xu Ying.Analysis of improved characteristics of pentacene thin-film transistor with an embedded copper oxide layer. Acta Physica Sinica, 2015, 64(22): 228502.doi:10.7498/aps.64.228502 |
[7] |
Xu Hua, Lan Lin-Feng, Li Min, Luo Dong-Xiang, Xiao Peng, Lin Zhen-Guo, Ning Hong-Long, Peng Jun-Biao.Effect of source/drain preparation on the performance of oxide thin-film transistors. Acta Physica Sinica, 2014, 63(3): 038501.doi:10.7498/aps.63.038501 |
[8] |
Chai Yu-Hua, Guo Yu-Xiu, Bian Wei, Li Wen, Yang Tao, Yi Ming-Dong, Fan Qu-Li, Xie Ling-Hai, Huang Wei.Progress of flexible organic non-volatile memory field-effect transistors. Acta Physica Sinica, 2014, 63(2): 027302.doi:10.7498/aps.63.027302 |
[9] |
Bai Yu-Rong, Xu Jing-Ping, Liu Lu, Fan Min-Min, Huang Yong, Cheng Zhi-Xiang.Modeling on drain current of high-k gate dielectric fully-depleted nanoscale germanium-on-insulator p-channel metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2014, 63(23): 237304.doi:10.7498/aps.63.237304 |
[10] |
Dong Jing, Chai Yu-Hua, Zhao Yue-Zhi, Shi Wei-Wei, Guo Yu-Xiu, Yi Ming-Dong, Xie Ling-Hai, Huang Wei.The progress of flexible organic field-effect transistors. Acta Physica Sinica, 2013, 62(4): 047301.doi:10.7498/aps.62.047301 |
[11] |
Liu Xing-Hui, Zhao Hong-Liang, Li Tian-Yu, Zhang Ren, Li Song-Jie, Ge Chun-Hua.Improvement on the electron transport efficiency of the carbon nanotube field effect transistor device by introducing heterogeneous-dual-metal-gate structure. Acta Physica Sinica, 2013, 62(14): 147308.doi:10.7498/aps.62.147308 |
[12] |
Shi Wei-Wei, Li-Wen, Yi Ming-Dong, Xie Ling-Hai, Wei-Wei, Huang Wei.Progress of the improved mobilities of organic field-effect transistors based on dielectric surface modification. Acta Physica Sinica, 2012, 61(22): 228502.doi:10.7498/aps.61.228502 |
[13] |
Zhao Geng, Cheng Xiao-Man, Tian Hai-Jun, Du Bo-Qun, Liang Xiao-Yu, Wu Feng.The influence of modified electrodes by V2O5 film on the performance of ambipolar organic field-effect transistors based on C60/Pentacene. Acta Physica Sinica, 2012, 61(21): 218502.doi:10.7498/aps.61.218502 |
[14] |
Li Bin, Liu Hong-Xia, Yuan Bo, Li Jin, Lu Feng-Ming.Model of electron mobility in inversion layer of strained Si/Si1-xGex n type metal-oxide-semiconductor field-effect transistors. Acta Physica Sinica, 2011, 60(1): 017202.doi:10.7498/aps.60.017202 |
[15] |
, Zhao Su-Ling, Xu Zheng, Yao Jiang-Feng, Zhang Fu-Jun, Tian Xue-Yan.Non-solvent addition induced self-organization for enhancement of performance of poly(3-hexylthiophene) organic field-effect transistors. Acta Physica Sinica, 2011, 60(3): 037201.doi:10.7498/aps.60.037201 |
[16] |
Jia Quan-Jie, Chen Yu, Tian Xue-Yan, Yao Jiang-Feng, Zhao Su-Ling, Gong Wei, Fan Xing, Xu Zheng, Zhang Fu-Jun.Study of crystalline structure change of annealing-induced self-organization in polymer field-effect transistors. Acta Physica Sinica, 2011, 60(5): 057201.doi:10.7498/aps.60.057201 |
[17] |
Jia Quan-Jie, Chen Yu, Tian Xue-Yan, Yao Jiang-Feng, Zhao Su-Ling, Fan Xing, Gong Wei, Xu Zheng, Zhang Fu-Jun.Crystallization and microstructure change of semiconductor active thin layer in polymer organic field-effect transistors. Acta Physica Sinica, 2011, 60(2): 027201.doi:10.7498/aps.60.027201 |
[18] |
Feng Chao-Wen, Cai Li, Kang Qiang, Peng Wei-Dong, Bai Peng, Wang Jia-Fu.Realization of the discrete chaotic system based on SET-MOS circuits. Acta Physica Sinica, 2011, 60(11): 110502.doi:10.7498/aps.60.110502 |
[19] |
Liu Wei-Qing, Kou Dong-Xing, Hu Lin-Hua, Huang Yang, Jiang Nian-Quan, Dai Song-Yuan.Processes of charge transport and transfer in dye-sensitized solar cell by electrical and optical modulation techniques. Acta Physica Sinica, 2010, 59(7): 5141-5147.doi:10.7498/aps.59.5141 |
[20] |
Zhang Zhi-Yong, Wang Tai-Hong.Multipeak negative-differential-resistance device by combining SET and MOSFET. Acta Physica Sinica, 2003, 52(7): 1766-1770.doi:10.7498/aps.52.1766 |