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Abstract

The characteristics of a double heterojunction bipolar transistor(DHBT) depend closely on the type of band alignment structure at the hetero-interface between emitter-base(E-B) heterojunction and base-collector(B-C) heterojunction. Based on thermionic-field-diffusion model, the comparisons are made of the DC and the RF characteristics between two novel HBTs, that is, InAlAs/GaSbAs/InP DHBT and InP/GaSbAs/InP DHBT, of which the former has a type-I E-B junction and a type-II B-C junction and the later has a type-II E-B junction and a type-II B-C junction. The simulation results show that DHBT with a type-I E-B junction and a type-II B-C junction has much better current driving capability, DC gain and RF performance, although it has a slightly high turn-on voltage.

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Funds:Project supported by the Open Fund of State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences (Grant No. FMI2009-08), the Hunan Province Education Department (Grant No. 09C959), and the Hunan Provincial Science and Technology Department (Grant No. 2010TY2003).

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Cited By

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Vol. 61, Issue 12 - 2012-06-20

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